Directional current switch using silicon single electron transistors controlled by charge injection into silicon nano-crystal floating dots

Nobuyoshi Takahashi, Hiroki Ishikuro, Toshiro Hiramoto

Research output: Contribution to journalConference article

14 Citations (Scopus)

Abstract

A directional current switch is fabricated using two single electron transistors (SETs) with a common gate electrode. In order to adjust the peak positions of Coulomb blockade oscillations, SETs with Si nano-crystal floating dots are utilized. The phases of two SETs are separately controlled using only one gate electrode and the operation of current switch is successfully demonstrated. This method for the phase control in SETs is very important for practical integration of SETs.

Original languageEnglish
Pages (from-to)371-374
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1999 Dec 1
Externally publishedYes
Event1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
Duration: 1999 Dec 51999 Dec 8

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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