Directional current switch using silicon single electron transistors controlled by charge injection into silicon nano-crystal floating dots

Nobuyoshi Takahashi; Hiroki Ishikuro; Toshiro Hiramoto

Directional current switch using silicon single electron transistors controlled by charge injection into silicon nano-crystal floating dots

Nobuyoshi Takahashi, Hiroki Ishikuro, Toshiro Hiramoto

Research output: Contribution to journal › Conference article › peer-review

Abstract

A directional current switch is fabricated using two single electron transistors (SETs) with a common gate electrode. In order to adjust the peak positions of Coulomb blockade oscillations, SETs with Si nano-crystal floating dots are utilized. The phases of two SETs are separately controlled using only one gate electrode and the operation of current switch is successfully demonstrated. This method for the phase control in SETs is very important for practical integration of SETs.

Original language	English
Pages (from-to)	371-374
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 1999 Dec 1
Externally published	Yes
Event	1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA Duration: 1999 Dec 5 → 1999 Dec 8

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

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title = "Directional current switch using silicon single electron transistors controlled by charge injection into silicon nano-crystal floating dots",

abstract = "A directional current switch is fabricated using two single electron transistors (SETs) with a common gate electrode. In order to adjust the peak positions of Coulomb blockade oscillations, SETs with Si nano-crystal floating dots are utilized. The phases of two SETs are separately controlled using only one gate electrode and the operation of current switch is successfully demonstrated. This method for the phase control in SETs is very important for practical integration of SETs.",

author = "Nobuyoshi Takahashi and Hiroki Ishikuro and Toshiro Hiramoto",

year = "1999",

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language = "English",

pages = "371--374",

journal = "Technical Digest - International Electron Devices Meeting",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "1999 IEEE International Devices Meeting (IEDM) ; Conference date: 05-12-1999 Through 08-12-1999",

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T1 - Directional current switch using silicon single electron transistors controlled by charge injection into silicon nano-crystal floating dots

AU - Takahashi, Nobuyoshi

AU - Ishikuro, Hiroki

AU - Hiramoto, Toshiro

PY - 1999/12/1

Y1 - 1999/12/1

N2 - A directional current switch is fabricated using two single electron transistors (SETs) with a common gate electrode. In order to adjust the peak positions of Coulomb blockade oscillations, SETs with Si nano-crystal floating dots are utilized. The phases of two SETs are separately controlled using only one gate electrode and the operation of current switch is successfully demonstrated. This method for the phase control in SETs is very important for practical integration of SETs.

AB - A directional current switch is fabricated using two single electron transistors (SETs) with a common gate electrode. In order to adjust the peak positions of Coulomb blockade oscillations, SETs with Si nano-crystal floating dots are utilized. The phases of two SETs are separately controlled using only one gate electrode and the operation of current switch is successfully demonstrated. This method for the phase control in SETs is very important for practical integration of SETs.

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M3 - Conference article

AN - SCOPUS:0033332339

SN - 0163-1918

SP - 371

EP - 374

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 1999 IEEE International Devices Meeting (IEDM)

Y2 - 5 December 1999 through 8 December 1999

ER -

Directional current switch using silicon single electron transistors controlled by charge injection into silicon nano-crystal floating dots

Abstract

ASJC Scopus subject areas

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