Directly InGaN-laser diode pumped Ti:Sapphire laser

Shota Sawai, Hikaru Kawauchi, Kenichi Hirosawa, Fumihiko Kannari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report InGaN-laser diode pumped Ti:Sapphire laser using a 2.5-mm-long crystal with a figure-of-merit (FOM) of ∼100. CW lasing at wavelength of 800 nm with a maximum average output power of 28.6 mW is obtained.

Original languageEnglish
Title of host publication2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013
DOIs
Publication statusPublished - 2013 Oct 18
Event10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013 - Kyoto, Japan
Duration: 2013 Jun 302013 Jul 4

Publication series

NamePacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

Other

Other10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013
CountryJapan
CityKyoto
Period13/6/3013/7/4

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • Cite this

    Sawai, S., Kawauchi, H., Hirosawa, K., & Kannari, F. (2013). Directly InGaN-laser diode pumped Ti:Sapphire laser. In 2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013 [6600309] (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest). https://doi.org/10.1109/CLEOPR.2013.6600309