TY - GEN
T1 - Directly InGaN-laser diode pumped Ti:Sapphire laser
AU - Sawai, Shota
AU - Kawauchi, Hikaru
AU - Hirosawa, Kenichi
AU - Kannari, Fumihiko
PY - 2013/10/18
Y1 - 2013/10/18
N2 - We report InGaN-laser diode pumped Ti:Sapphire laser using a 2.5-mm-long crystal with a figure-of-merit (FOM) of ∼100. CW lasing at wavelength of 800 nm with a maximum average output power of 28.6 mW is obtained.
AB - We report InGaN-laser diode pumped Ti:Sapphire laser using a 2.5-mm-long crystal with a figure-of-merit (FOM) of ∼100. CW lasing at wavelength of 800 nm with a maximum average output power of 28.6 mW is obtained.
UR - http://www.scopus.com/inward/record.url?scp=84885452663&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84885452663&partnerID=8YFLogxK
U2 - 10.1109/CLEOPR.2013.6600309
DO - 10.1109/CLEOPR.2013.6600309
M3 - Conference contribution
AN - SCOPUS:84885452663
SN - 9781467364751
T3 - Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
BT - 2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013
T2 - 10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013
Y2 - 30 June 2013 through 4 July 2013
ER -