Abstract
We report InGaN-laser diode pumped Ti:Sapphire laser using a 2.5-mm-long crystal with a figure-of-merit (FOM) of ∼100. CW lasing at wavelength of 800 nm with a maximum average output power of 28.6 mW is obtained.
| Original language | English |
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| Title of host publication | 2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013 |
| DOIs | |
| Publication status | Published - 2013 Oct 18 |
| Event | 10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013 - Kyoto, Japan Duration: 2013 Jun 30 → 2013 Jul 4 |
Publication series
| Name | Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest |
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Other
| Other | 10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013 |
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| Country | Japan |
| City | Kyoto |
| Period | 13/6/30 → 13/7/4 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Cite this
Sawai, S., Kawauchi, H., Hirosawa, K., & Kannari, F. (2013). Directly InGaN-laser diode pumped Ti:Sapphire laser. In 2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013 [6600309] (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest). https://doi.org/10.1109/CLEOPR.2013.6600309