Directly InGaN-laser diode pumped Ti:Sapphire laser

Shota Sawai; Hikaru Kawauchi; Kenichi Hirosawa; Fumihiko Kannari

doi:10.1109/CLEOPR.2013.6600309

Directly InGaN-laser diode pumped Ti:Sapphire laser

Shota Sawai, Hikaru Kawauchi, Kenichi Hirosawa, Fumihiko Kannari

Department of Electronics and Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report InGaN-laser diode pumped Ti:Sapphire laser using a 2.5-mm-long crystal with a figure-of-merit (FOM) of ∼100. CW lasing at wavelength of 800 nm with a maximum average output power of 28.6 mW is obtained.

Original language	English
Title of host publication	2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013
DOIs	https://doi.org/10.1109/CLEOPR.2013.6600309
Publication status	Published - 2013 Oct 18
Event	10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013 - Kyoto, Japan Duration: 2013 Jun 30 → 2013 Jul 4

Publication series

Name	Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

Other

Other	10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013
Country	Japan
City	Kyoto
Period	13/6/30 → 13/7/4

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/CLEOPR.2013.6600309

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Directly InGaN-laser diode pumped Ti:Sapphire laser. / Sawai, Shota; Kawauchi, Hikaru; Hirosawa, Kenichi; Kannari, Fumihiko.

2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013. 2013. 6600309 (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sawai, S, Kawauchi, H, Hirosawa, K & Kannari, F 2013, Directly InGaN-laser diode pumped Ti:Sapphire laser. in 2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013., 6600309, Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, 10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013, Kyoto, Japan, 13/6/30. https://doi.org/10.1109/CLEOPR.2013.6600309

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title = "Directly InGaN-laser diode pumped Ti:Sapphire laser",

abstract = "We report InGaN-laser diode pumped Ti:Sapphire laser using a 2.5-mm-long crystal with a figure-of-merit (FOM) of ∼100. CW lasing at wavelength of 800 nm with a maximum average output power of 28.6 mW is obtained.",

author = "Shota Sawai and Hikaru Kawauchi and Kenichi Hirosawa and Fumihiko Kannari",

year = "2013",

month = oct,

day = "18",

doi = "10.1109/CLEOPR.2013.6600309",

language = "English",

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AU - Sawai, Shota

AU - Kawauchi, Hikaru

AU - Hirosawa, Kenichi

AU - Kannari, Fumihiko

PY - 2013/10/18

Y1 - 2013/10/18

N2 - We report InGaN-laser diode pumped Ti:Sapphire laser using a 2.5-mm-long crystal with a figure-of-merit (FOM) of ∼100. CW lasing at wavelength of 800 nm with a maximum average output power of 28.6 mW is obtained.

AB - We report InGaN-laser diode pumped Ti:Sapphire laser using a 2.5-mm-long crystal with a figure-of-merit (FOM) of ∼100. CW lasing at wavelength of 800 nm with a maximum average output power of 28.6 mW is obtained.

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DO - 10.1109/CLEOPR.2013.6600309

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AN - SCOPUS:84885452663

SN - 9781467364751

T3 - Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

BT - 2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013

T2 - 10th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013

Y2 - 30 June 2013 through 4 July 2013

ER -

Directly InGaN-laser diode pumped Ti:Sapphire laser

Abstract

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ASJC Scopus subject areas

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