@article{37f2cb28150c4c3eac5f09551f2947fd,
title = "Discovery of a metastable van der Waals semiconductor via polymorphic crystallization of an amorphous film",
abstract = "Here we report on the growth of thin crystalline films of the metastable phase GeTe2. Direct observation by transmission electron microscopy revealed a Te-Ge-Te stacking with van der Waals gaps. Moreover, electrical and optical measurements revealed the films exhibted semiconducting properties commensurate with electronics applications. Feasibility studies in which device structures were fabricated demonstrated the potential application of GeTe2 as an electronic material.",
author = "Yuta Saito and Shogo Hatayama and Chang, {Wen Hsin} and Naoya Okada and Toshifumi Irisawa and Fumihiko Uesugi and Masaki Takeguchi and Yuji Sutou and Paul Fons",
note = "Funding Information: This study was supported by JSPS KAKENHI (Grant No. 18K14306, 19H02619, and 21H05009) and partially by the commissioned research (No. 03701) of the National Institute of Information and Communications Technology (NICT), Japan. We thank Prof. Alexander V. Kolobov for the fruitful discussions. XRD was conducted at the AIST Nano-Processing Facility (NPF). The TEM measurements were supported by the NIMS microstructural characterization platform (NMCP). We thank Ms. Miho Sakurai (AIST) for her technical assistance. Publisher Copyright: {\textcopyright} 2023 The Royal Society of Chemistry.",
year = "2023",
doi = "10.1039/d2mh01449a",
language = "English",
journal = "Materials Horizons",
issn = "2051-6347",
publisher = "Royal Society of Chemistry",
}