Dissociative mechanisms of monosilane and arsine on copper(II) oxide

Tadaharu Watanabe, Hiroaki Imai, Takashi Suzuki

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Chemical reactions of copper(II) oxide (CuO) with monosilane (SiH4) and arsine (AsH3) at room temperature were investigated. Both hydrides were trapped by CuO. Adsorption capacities of CuO for SiH4 and AsH3 were increased in relation to the specific surface areas of CuO. The capacity for AsH3 was estimated to be ten times as large as that for SiH4. From the surface analyses of the CuO exposed to SiH4 and AsH3, arsenic was found to a depth of 30 Å from the surface, although silicon was detected only on the surface. The CuO surface was covered with a Si-O layer formed by the reaction of SiH4 with CuO. Thus, SiH4 did not diffuse into the inner parts of the CuO. On the other hand, AsH3 was considered to have penetrated into the CuO because volatile H2O was formed by the reaction of AsH3 and CuO.

Original languageEnglish
Pages (from-to)2654-2657
Number of pages4
JournalJournal of the Electrochemical Society
Volume143
Issue number8
DOIs
Publication statusPublished - 1996 Aug

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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