Dissociative mechanisms of monosilane and arsine on copper(II) oxide

Tadaharu Watanabe, Hiroaki Imai, Takashi Suzuki

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Chemical reactions of copper(II) oxide (CuO) with monosilane (SiH4) and arsine (AsH3) at room temperature were investigated. Both hydrides were trapped by CuO. Adsorption capacities of CuO for SiH4 and AsH3 were increased in relation to the specific surface areas of CuO. The capacity for AsH3 was estimated to be ten times as large as that for SiH4. From the surface analyses of the CuO exposed to SiH4 and AsH3, arsenic was found to a depth of 30 Å from the surface, although silicon was detected only on the surface. The CuO surface was covered with a Si-O layer formed by the reaction of SiH4 with CuO. Thus, SiH4 did not diffuse into the inner parts of the CuO. On the other hand, AsH3 was considered to have penetrated into the CuO because volatile H2O was formed by the reaction of AsH3 and CuO.

Original languageEnglish
Pages (from-to)2654-2657
Number of pages4
JournalJournal of the Electrochemical Society
Volume143
Issue number8
Publication statusPublished - 1996 Aug

Fingerprint

Copper oxides
copper
oxides
Arsenic
Hydrides
Specific surface area
Chemical reactions
arsenic
hydrides
chemical reactions
Adsorption
Silicon
monosilane
arsine
adsorption
silicon
room temperature
Temperature

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Dissociative mechanisms of monosilane and arsine on copper(II) oxide. / Watanabe, Tadaharu; Imai, Hiroaki; Suzuki, Takashi.

In: Journal of the Electrochemical Society, Vol. 143, No. 8, 08.1996, p. 2654-2657.

Research output: Contribution to journalArticle

Watanabe, Tadaharu ; Imai, Hiroaki ; Suzuki, Takashi. / Dissociative mechanisms of monosilane and arsine on copper(II) oxide. In: Journal of the Electrochemical Society. 1996 ; Vol. 143, No. 8. pp. 2654-2657.
@article{5e013c926b3e409da2b1add94c31d4b0,
title = "Dissociative mechanisms of monosilane and arsine on copper(II) oxide",
abstract = "Chemical reactions of copper(II) oxide (CuO) with monosilane (SiH4) and arsine (AsH3) at room temperature were investigated. Both hydrides were trapped by CuO. Adsorption capacities of CuO for SiH4 and AsH3 were increased in relation to the specific surface areas of CuO. The capacity for AsH3 was estimated to be ten times as large as that for SiH4. From the surface analyses of the CuO exposed to SiH4 and AsH3, arsenic was found to a depth of 30 {\AA} from the surface, although silicon was detected only on the surface. The CuO surface was covered with a Si-O layer formed by the reaction of SiH4 with CuO. Thus, SiH4 did not diffuse into the inner parts of the CuO. On the other hand, AsH3 was considered to have penetrated into the CuO because volatile H2O was formed by the reaction of AsH3 and CuO.",
author = "Tadaharu Watanabe and Hiroaki Imai and Takashi Suzuki",
year = "1996",
month = "8",
language = "English",
volume = "143",
pages = "2654--2657",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "8",

}

TY - JOUR

T1 - Dissociative mechanisms of monosilane and arsine on copper(II) oxide

AU - Watanabe, Tadaharu

AU - Imai, Hiroaki

AU - Suzuki, Takashi

PY - 1996/8

Y1 - 1996/8

N2 - Chemical reactions of copper(II) oxide (CuO) with monosilane (SiH4) and arsine (AsH3) at room temperature were investigated. Both hydrides were trapped by CuO. Adsorption capacities of CuO for SiH4 and AsH3 were increased in relation to the specific surface areas of CuO. The capacity for AsH3 was estimated to be ten times as large as that for SiH4. From the surface analyses of the CuO exposed to SiH4 and AsH3, arsenic was found to a depth of 30 Å from the surface, although silicon was detected only on the surface. The CuO surface was covered with a Si-O layer formed by the reaction of SiH4 with CuO. Thus, SiH4 did not diffuse into the inner parts of the CuO. On the other hand, AsH3 was considered to have penetrated into the CuO because volatile H2O was formed by the reaction of AsH3 and CuO.

AB - Chemical reactions of copper(II) oxide (CuO) with monosilane (SiH4) and arsine (AsH3) at room temperature were investigated. Both hydrides were trapped by CuO. Adsorption capacities of CuO for SiH4 and AsH3 were increased in relation to the specific surface areas of CuO. The capacity for AsH3 was estimated to be ten times as large as that for SiH4. From the surface analyses of the CuO exposed to SiH4 and AsH3, arsenic was found to a depth of 30 Å from the surface, although silicon was detected only on the surface. The CuO surface was covered with a Si-O layer formed by the reaction of SiH4 with CuO. Thus, SiH4 did not diffuse into the inner parts of the CuO. On the other hand, AsH3 was considered to have penetrated into the CuO because volatile H2O was formed by the reaction of AsH3 and CuO.

UR - http://www.scopus.com/inward/record.url?scp=0030215554&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030215554&partnerID=8YFLogxK

M3 - Article

VL - 143

SP - 2654

EP - 2657

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 8

ER -