Dissociative mechanisms of monosilane and arsine on copper(II) oxide

Tadaharu Watanabe; Hiroaki Imai; Takashi Suzuki

doi:10.1149/1.1837064

Dissociative mechanisms of monosilane and arsine on copper(II) oxide

Tadaharu Watanabe, Hiroaki Imai, Takashi Suzuki

Department of Applied Chemistry

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Chemical reactions of copper(II) oxide (CuO) with monosilane (SiH₄) and arsine (AsH₃) at room temperature were investigated. Both hydrides were trapped by CuO. Adsorption capacities of CuO for SiH₄ and AsH₃ were increased in relation to the specific surface areas of CuO. The capacity for AsH₃ was estimated to be ten times as large as that for SiH₄. From the surface analyses of the CuO exposed to SiH₄ and AsH₃, arsenic was found to a depth of 30 Å from the surface, although silicon was detected only on the surface. The CuO surface was covered with a Si-O layer formed by the reaction of SiH₄ with CuO. Thus, SiH₄ did not diffuse into the inner parts of the CuO. On the other hand, AsH₃ was considered to have penetrated into the CuO because volatile H₂O was formed by the reaction of AsH₃ and CuO.

Original language	English
Pages (from-to)	2654-2657
Number of pages	4
Journal	Journal of the Electrochemical Society
Volume	143
Issue number	8
DOIs	https://doi.org/10.1149/1.1837064
Publication status	Published - 1996 Aug

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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@article{5e013c926b3e409da2b1add94c31d4b0,

title = "Dissociative mechanisms of monosilane and arsine on copper(II) oxide",

abstract = "Chemical reactions of copper(II) oxide (CuO) with monosilane (SiH4) and arsine (AsH3) at room temperature were investigated. Both hydrides were trapped by CuO. Adsorption capacities of CuO for SiH4 and AsH3 were increased in relation to the specific surface areas of CuO. The capacity for AsH3 was estimated to be ten times as large as that for SiH4. From the surface analyses of the CuO exposed to SiH4 and AsH3, arsenic was found to a depth of 30 {\AA} from the surface, although silicon was detected only on the surface. The CuO surface was covered with a Si-O layer formed by the reaction of SiH4 with CuO. Thus, SiH4 did not diffuse into the inner parts of the CuO. On the other hand, AsH3 was considered to have penetrated into the CuO because volatile H2O was formed by the reaction of AsH3 and CuO.",

author = "Tadaharu Watanabe and Hiroaki Imai and Takashi Suzuki",

year = "1996",

month = aug,

doi = "10.1149/1.1837064",

language = "English",

volume = "143",

pages = "2654--2657",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "8",

}

TY - JOUR

T1 - Dissociative mechanisms of monosilane and arsine on copper(II) oxide

AU - Watanabe, Tadaharu

AU - Imai, Hiroaki

AU - Suzuki, Takashi

PY - 1996/8

Y1 - 1996/8

N2 - Chemical reactions of copper(II) oxide (CuO) with monosilane (SiH4) and arsine (AsH3) at room temperature were investigated. Both hydrides were trapped by CuO. Adsorption capacities of CuO for SiH4 and AsH3 were increased in relation to the specific surface areas of CuO. The capacity for AsH3 was estimated to be ten times as large as that for SiH4. From the surface analyses of the CuO exposed to SiH4 and AsH3, arsenic was found to a depth of 30 Å from the surface, although silicon was detected only on the surface. The CuO surface was covered with a Si-O layer formed by the reaction of SiH4 with CuO. Thus, SiH4 did not diffuse into the inner parts of the CuO. On the other hand, AsH3 was considered to have penetrated into the CuO because volatile H2O was formed by the reaction of AsH3 and CuO.

AB - Chemical reactions of copper(II) oxide (CuO) with monosilane (SiH4) and arsine (AsH3) at room temperature were investigated. Both hydrides were trapped by CuO. Adsorption capacities of CuO for SiH4 and AsH3 were increased in relation to the specific surface areas of CuO. The capacity for AsH3 was estimated to be ten times as large as that for SiH4. From the surface analyses of the CuO exposed to SiH4 and AsH3, arsenic was found to a depth of 30 Å from the surface, although silicon was detected only on the surface. The CuO surface was covered with a Si-O layer formed by the reaction of SiH4 with CuO. Thus, SiH4 did not diffuse into the inner parts of the CuO. On the other hand, AsH3 was considered to have penetrated into the CuO because volatile H2O was formed by the reaction of AsH3 and CuO.

UR - http://www.scopus.com/inward/record.url?scp=0030215554&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030215554&partnerID=8YFLogxK

U2 - 10.1149/1.1837064

DO - 10.1149/1.1837064

M3 - Article

AN - SCOPUS:0030215554

SN - 0013-4651

VL - 143

SP - 2654

EP - 2657

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 8

ER -

Dissociative mechanisms of monosilane and arsine on copper(II) oxide

Abstract

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