Donor and acceptor concentration dependence of the electron Hall mobility and the Hall scattering factor in n-type 4H- and 6H-SiC

Hisaomi Iwata, Kohei M Itoh

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Abstract

Theoretical calculation of the electron Hall mobility and the Hall scattering factor in 4H- and 6H-SiC is performed based on the low-field transport model. Our mobility calculation as a function of temperature, net-doping concentration ([ND]-[NA]), and compensation ratio ([NA]/[ND]), where ND and NA are the donor (nitrogen) and acceptor concentrations, respectively, provides the theoretical values of the electron Hall mobility expected for the high quality SiC crystal. The results can be used for the evaluation of the crystalline quality of a given SiC sample. We also present the ratio of the Hall and drift mobility, i.e., the Hall scattering factor, which is needed to make a bridge between the experimentally measured Hall mobility and the theoretically calculated drift mobility using, for example, Monte Carlo simulation. Our calculations of both the electron Hall mobility and the Hall scattering factor are in very good agreement with the experimental results.

Original languageEnglish
Pages (from-to)6228-6234
Number of pages7
JournalJournal of Applied Physics
Volume89
Issue number11 I
DOIs
Publication statusPublished - 2001 Jun

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scattering
electrons
nitrogen
evaluation
crystals
simulation
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

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Donor and acceptor concentration dependence of the electron Hall mobility and the Hall scattering factor in n-type 4H- and 6H-SiC. / Iwata, Hisaomi; Itoh, Kohei M.

In: Journal of Applied Physics, Vol. 89, No. 11 I, 06.2001, p. 6228-6234.

Research output: Contribution to journalArticle

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