Doping of ZnO nanowires using phosphorus diffusion from a spin-on doped glass source

A. Bocheux, I. C. Robin, J. Bonaimé, B. Hyot, A. V. Kolobov, K. V. Mitrofanov, P. Fons, J. Tominaga, Y. Tamenori, G. Feuillet

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Abstract

In this article, we report on ZnO nanowires that were phosphorus doped using a spin on dopant glass deposition and diffusion method. Photoluminescence measurements suggest that this process yields p-doped ZnO. The spatial location of P atoms was studied using x-ray near-edge absorption structure spectroscopy and it is concluded that the doping is amphoteric with P atoms located on both Zn and O sites.

Original languageEnglish
Article number194302
JournalJournal of Applied Physics
Volume115
Issue number19
DOIs
Publication statusPublished - 2014 May 21
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Bocheux, A., Robin, I. C., Bonaimé, J., Hyot, B., Kolobov, A. V., Mitrofanov, K. V., Fons, P., Tominaga, J., Tamenori, Y., & Feuillet, G. (2014). Doping of ZnO nanowires using phosphorus diffusion from a spin-on doped glass source. Journal of Applied Physics, 115(19), [194302]. https://doi.org/10.1063/1.4876228