Doping position control of nitrogen-vacancy centers in diamond using nitrogen-doped chemical vapor deposition on micropatterned substrate

Tomohiro Gomi, Syuhei Tomizawa, Kohei Ohashi, Kohei M. Itoh, Junko Ishi-Hayase, Hideyuki Watanabe, Hitoshi Umezawa, Shinichi Shikata

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate lateral position control of nitrogen-vacancy centers doped near the surface of diamond substrate using micropatterned substrate for nitrogen-doped isotopicallyenriched chemical vapor deposition. We confirm the spatially-selective doping of NV centers on etched area. We also found the nitrogen-vacancy creation efficiency at the etched area is much higher than that at the non-etched area of diamond substrate.

Original languageEnglish
Title of host publicationCLEO
Subtitle of host publicationScience and Innovations, CLEO_SI 2013
PagesJTh2A.36
Publication statusPublished - 2013 Nov 18
EventCLEO: Science and Innovations, CLEO_SI 2013 - San Jose, CA, United States
Duration: 2013 Jun 92013 Jun 14

Publication series

NameCLEO: Science and Innovations, CLEO_SI 2013

Other

OtherCLEO: Science and Innovations, CLEO_SI 2013
CountryUnited States
CitySan Jose, CA
Period13/6/913/6/14

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Gomi, T., Tomizawa, S., Ohashi, K., Itoh, K. M., Ishi-Hayase, J., Watanabe, H., Umezawa, H., & Shikata, S. (2013). Doping position control of nitrogen-vacancy centers in diamond using nitrogen-doped chemical vapor deposition on micropatterned substrate. In CLEO: Science and Innovations, CLEO_SI 2013 (pp. JTh2A.36). (CLEO: Science and Innovations, CLEO_SI 2013).