TY - GEN
T1 - Doping position control of nitrogen-vacancy centers in diamond using nitrogen-doped chemical vapor deposition on micropatterned substrate
AU - Gomi, Tomohiro
AU - Tomizawa, Syuhei
AU - Ohashi, Kohei
AU - Itoh, Kohei M.
AU - Ishi-Hayase, Junko
AU - Watanabe, Hideyuki
AU - Umezawa, Hitoshi
AU - Shikata, Shinichi
PY - 2013/11/21
Y1 - 2013/11/21
N2 - We demonstrate lateral position control of nitrogen-vacancy centers doped near the surface of diamond substrate using micropatterned substrate for nitrogen-doped isotopicallyenriched chemical vapor deposition. We confirm the spatially-selective doping of NV centers on etched area. We also found the nitrogen-vacancy creation efficiency at the etched area is much higher than that at the non-etched area of diamond substrate.
AB - We demonstrate lateral position control of nitrogen-vacancy centers doped near the surface of diamond substrate using micropatterned substrate for nitrogen-doped isotopicallyenriched chemical vapor deposition. We confirm the spatially-selective doping of NV centers on etched area. We also found the nitrogen-vacancy creation efficiency at the etched area is much higher than that at the non-etched area of diamond substrate.
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UR - http://www.scopus.com/inward/citedby.url?scp=84887636946&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84887636946
SN - 9781557529725
T3 - CLEO: QELS_Fundamental Science, CLEO:QELS FS 2013
SP - JTh2A.36
BT - CLEO
T2 - CLEO: QELS_Fundamental Science, CLEO:QELS FS 2013
Y2 - 9 June 2013 through 14 June 2013
ER -