Abstract
We demonstrate lateral position control of nitrogen-vacancy centers doped near the surface of diamond substrate using micropatterned substrate for nitrogen-doped isotopicallyenriched chemical vapor deposition. We confirm the spatially-selective doping of NV centers on etched area. We also found the nitrogen-vacancy creation efficiency at the etched area is much higher than that at the non-etched area of diamond substrate.
| Original language | English |
|---|---|
| Title of host publication | CLEO: QELS_Fundamental Science, CLEO:QELS FS 2013 |
| Publication status | Published - 2013 |
| Event | CLEO: QELS_Fundamental Science, CLEO:QELS FS 2013 - San Jose, CA, United States Duration: 2013 Jun 9 → 2013 Jun 14 |
Other
| Other | CLEO: QELS_Fundamental Science, CLEO:QELS FS 2013 |
|---|---|
| Country | United States |
| City | San Jose, CA |
| Period | 13/6/9 → 13/6/14 |
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ASJC Scopus subject areas
- Computer Networks and Communications
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
Cite this
Doping position control of nitrogen-vacancy centers in diamond using nitrogen-doped chemical vapor deposition on micropatterned substrate. / Gomi, Tomohiro; Tomizawa, Syuhei; Ohashi, Kohei; Itoh, Kohei M; Hayase, Junko; Watanabe, Hideyuki; Umezawa, Hitoshi; Shikata, Shinichi.
CLEO: QELS_Fundamental Science, CLEO:QELS FS 2013. 2013.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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TY - GEN
T1 - Doping position control of nitrogen-vacancy centers in diamond using nitrogen-doped chemical vapor deposition on micropatterned substrate
AU - Gomi, Tomohiro
AU - Tomizawa, Syuhei
AU - Ohashi, Kohei
AU - Itoh, Kohei M
AU - Hayase, Junko
AU - Watanabe, Hideyuki
AU - Umezawa, Hitoshi
AU - Shikata, Shinichi
PY - 2013
Y1 - 2013
N2 - We demonstrate lateral position control of nitrogen-vacancy centers doped near the surface of diamond substrate using micropatterned substrate for nitrogen-doped isotopicallyenriched chemical vapor deposition. We confirm the spatially-selective doping of NV centers on etched area. We also found the nitrogen-vacancy creation efficiency at the etched area is much higher than that at the non-etched area of diamond substrate.
AB - We demonstrate lateral position control of nitrogen-vacancy centers doped near the surface of diamond substrate using micropatterned substrate for nitrogen-doped isotopicallyenriched chemical vapor deposition. We confirm the spatially-selective doping of NV centers on etched area. We also found the nitrogen-vacancy creation efficiency at the etched area is much higher than that at the non-etched area of diamond substrate.
UR - http://www.scopus.com/inward/record.url?scp=84887636946&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84887636946&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84887636946
SN - 9781557529725
BT - CLEO: QELS_Fundamental Science, CLEO:QELS FS 2013
ER -