Abstract
We demonstrate lateral position control of nitrogen-vacancy centers doped near the surface of diamond substrate using micropatterned substrate for nitrogen-doped isotopicallyenriched chemical vapor deposition. We confirm the spatially-selective doping of NV centers on etched area. We also found the nitrogen-vacancy creation efficiency at the etched area is much higher than that at the non-etched area of diamond substrate.
| Original language | English |
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| Title of host publication | CLEO |
| Subtitle of host publication | QELS_Fundamental Science, CLEO:QELS FS 2013 |
| Pages | JTh2A.36 |
| Publication status | Published - 2013 Nov 21 |
| Event | CLEO: QELS_Fundamental Science, CLEO:QELS FS 2013 - San Jose, CA, United States Duration: 2013 Jun 9 → 2013 Jun 14 |
Publication series
| Name | CLEO: QELS_Fundamental Science, CLEO:QELS FS 2013 |
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Other
| Other | CLEO: QELS_Fundamental Science, CLEO:QELS FS 2013 |
|---|---|
| Country | United States |
| City | San Jose, CA |
| Period | 13/6/9 → 13/6/14 |
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ASJC Scopus subject areas
- Computer Networks and Communications
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
Cite this
Gomi, T., Tomizawa, S., Ohashi, K., Itoh, K. M., Ishi-Hayase, J., Watanabe, H., Umezawa, H., & Shikata, S. (2013). Doping position control of nitrogen-vacancy centers in diamond using nitrogen-doped chemical vapor deposition on micropatterned substrate. In CLEO: QELS_Fundamental Science, CLEO:QELS FS 2013 (pp. JTh2A.36). (CLEO: QELS_Fundamental Science, CLEO:QELS FS 2013).