Doping position control of nitrogen-vacancy centers in diamond using nitrogen-doped chemical vapor deposition on micropatterned substrate

Tomohiro Gomi, Syuhei Tomizawa, Kohei Ohashi, Kohei M. Itoh, Junko Ishi-Hayase, Hideyuki Watanabe, Hitoshi Umezawa, Shinichi Shikata

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate lateral position control of nitrogen-vacancy centers doped near the surface of diamond substrate using micropatterned substrate for nitrogen-doped isotopically-enriched chemical vapor deposition. We confirm the spatially-selective doping of NV centers on etched area. We also found the nitrogen-vacancy creation efficiency at the etched area is much higher than that at the non-etched area of diamond substrate.

Original languageEnglish
Title of host publication2013 Conference on Lasers and Electro-Optics, CLEO 2013
PublisherIEEE Computer Society
ISBN (Print)9781557529725
DOIs
Publication statusPublished - 2013 Jan 1
Event2013 Conference on Lasers and Electro-Optics, CLEO 2013 - San Jose, CA, United States
Duration: 2013 Jun 92013 Jun 14

Publication series

Name2013 Conference on Lasers and Electro-Optics, CLEO 2013

Other

Other2013 Conference on Lasers and Electro-Optics, CLEO 2013
CountryUnited States
CitySan Jose, CA
Period13/6/913/6/14

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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