Dose dependence of recrystallization behavior in germanium-ion-implanted polycrystalline silicon films

Myeon Koo Kang, Takuro Yamaguchi, Hiroshi Kuwano

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Abstract

Recrystallization behavior in polycrystalline silicon (poly-Si) films amorphized by germanium ion (Ge+) implantation on a SÍO2 layer is investigated. The nucléation rate decreases as the Ge+ dose increases, which is strongly related to the increase in the disordered states in as-implanted amorphous Si films. The growth rate first increases and then decreases as the Ge+ dose increases, which can be explained by the strain effect induced by Ge atoms. The grain size of recrystallized poly-Si films increases as the Ge+ dose increases. The optimum implantation dose to achieve good crystallinity is found to be 1 X 1015 ions/cm2.

Original languageEnglish
Pages (from-to)L803-L805
JournalJapanese journal of applied physics
Volume34
Issue number7
DOIs
Publication statusPublished - 1995 Jan 1

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Keywords

  • Ge ion implantation
  • Grain size
  • Growth rate
  • Nucléation rate
  • Recrystallization
  • Recrystallized polycrystalline silicon films

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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