TY - GEN
T1 - Dry etching and low-temperature direct bonding process of lithium niobate wafer for fabricating micro/nano channel device
AU - Tsuchiya, Toshiyuki
AU - Sugano, Koji
AU - Takahashi, Hideki
AU - Seo, Hangyeol
AU - Pihosh, Yuriy
AU - Kazoe, Yutaka
AU - Mawatari, Kazuma
AU - Kitamori, Takehiko
AU - Tabata, Osamu
N1 - Funding Information:
A part of this work was supported by the Green Network of Excellence (GRENE) project and the “Nanotechnology Platform Japan” Program (Nanotechnology Platform, Kyoto University).
Publisher Copyright:
© 2017 IEEE.
PY - 2017/7/26
Y1 - 2017/7/26
N2 - We have developed dry etching process of lithium niobate (LN) wafer using neutral loop discharge reactive ion etching (NLD-RIE) to fabricate both micro- and nano-channels for investigating proton diffusion enhancement in ferroelectric nanochannels. We have also developed low-temperature direct bonding process between LN wafers. Two-hundred parallel nanochannel array of 200-nm deep and wide and 400-μm long connected to two microchannels (width: 500 μm, depth: 5.9 μm) at the both ends were fabricated. We have succeeded in measuring the proton diffusion coefficient as high as 1.2×10-8 m2/s.
AB - We have developed dry etching process of lithium niobate (LN) wafer using neutral loop discharge reactive ion etching (NLD-RIE) to fabricate both micro- and nano-channels for investigating proton diffusion enhancement in ferroelectric nanochannels. We have also developed low-temperature direct bonding process between LN wafers. Two-hundred parallel nanochannel array of 200-nm deep and wide and 400-μm long connected to two microchannels (width: 500 μm, depth: 5.9 μm) at the both ends were fabricated. We have succeeded in measuring the proton diffusion coefficient as high as 1.2×10-8 m2/s.
KW - Lithium niobate
KW - magnetic neutral loop discharge reactive ion etching
KW - nanochannel
KW - proton diffusion
KW - surface activated bonding
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U2 - 10.1109/TRANSDUCERS.2017.7994281
DO - 10.1109/TRANSDUCERS.2017.7994281
M3 - Conference contribution
AN - SCOPUS:85029392891
T3 - TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems
SP - 1245
EP - 1248
BT - TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2017
Y2 - 18 June 2017 through 22 June 2017
ER -