Dry etching and low-temperature direct bonding process of lithium niobate wafer for fabricating micro/nano channel device

Toshiyuki Tsuchiya, Koji Sugano, Hideki Takahashi, Hangyeol Seo, Yuriy Pihosh, Yutaka Kazoe, Kazuma Mawatari, Takehiko Kitamori, Osamu Tabata

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We have developed dry etching process of lithium niobate (LN) wafer using neutral loop discharge reactive ion etching (NLD-RIE) to fabricate both micro- and nano-channels for investigating proton diffusion enhancement in ferroelectric nanochannels. We have also developed low-temperature direct bonding process between LN wafers. Two-hundred parallel nanochannel array of 200-nm deep and wide and 400-μm long connected to two microchannels (width: 500 μm, depth: 5.9 μm) at the both ends were fabricated. We have succeeded in measuring the proton diffusion coefficient as high as 1.2×10-8 m2/s.

Original languageEnglish
Title of host publicationTRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1245-1248
Number of pages4
ISBN (Electronic)9781538627310
DOIs
Publication statusPublished - 2017 Jul 26
Event19th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2017 - Kaohsiung, Taiwan, Province of China
Duration: 2017 Jun 182017 Jun 22

Publication series

NameTRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems

Other

Other19th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2017
CountryTaiwan, Province of China
CityKaohsiung
Period17/6/1817/6/22

Fingerprint

Dry etching
lithium niobates
Protons
Lithium
etching
wafers
protons
Reactive ion etching
microchannels
Microchannels
Ferroelectric materials
diffusion coefficient
Temperature
augmentation
ions
lithium niobate

Keywords

  • Lithium niobate
  • magnetic neutral loop discharge reactive ion etching
  • nanochannel
  • proton diffusion
  • surface activated bonding

ASJC Scopus subject areas

  • Chemical Health and Safety
  • Instrumentation
  • Electrical and Electronic Engineering

Cite this

Tsuchiya, T., Sugano, K., Takahashi, H., Seo, H., Pihosh, Y., Kazoe, Y., ... Tabata, O. (2017). Dry etching and low-temperature direct bonding process of lithium niobate wafer for fabricating micro/nano channel device. In TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems (pp. 1245-1248). [7994281] (TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/TRANSDUCERS.2017.7994281

Dry etching and low-temperature direct bonding process of lithium niobate wafer for fabricating micro/nano channel device. / Tsuchiya, Toshiyuki; Sugano, Koji; Takahashi, Hideki; Seo, Hangyeol; Pihosh, Yuriy; Kazoe, Yutaka; Mawatari, Kazuma; Kitamori, Takehiko; Tabata, Osamu.

TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1245-1248 7994281 (TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tsuchiya, T, Sugano, K, Takahashi, H, Seo, H, Pihosh, Y, Kazoe, Y, Mawatari, K, Kitamori, T & Tabata, O 2017, Dry etching and low-temperature direct bonding process of lithium niobate wafer for fabricating micro/nano channel device. in TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems., 7994281, TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems, Institute of Electrical and Electronics Engineers Inc., pp. 1245-1248, 19th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2017, Kaohsiung, Taiwan, Province of China, 17/6/18. https://doi.org/10.1109/TRANSDUCERS.2017.7994281
Tsuchiya T, Sugano K, Takahashi H, Seo H, Pihosh Y, Kazoe Y et al. Dry etching and low-temperature direct bonding process of lithium niobate wafer for fabricating micro/nano channel device. In TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1245-1248. 7994281. (TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems). https://doi.org/10.1109/TRANSDUCERS.2017.7994281
Tsuchiya, Toshiyuki ; Sugano, Koji ; Takahashi, Hideki ; Seo, Hangyeol ; Pihosh, Yuriy ; Kazoe, Yutaka ; Mawatari, Kazuma ; Kitamori, Takehiko ; Tabata, Osamu. / Dry etching and low-temperature direct bonding process of lithium niobate wafer for fabricating micro/nano channel device. TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 1245-1248 (TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems).
@inproceedings{911d64d835c948dc975025bca00aa264,
title = "Dry etching and low-temperature direct bonding process of lithium niobate wafer for fabricating micro/nano channel device",
abstract = "We have developed dry etching process of lithium niobate (LN) wafer using neutral loop discharge reactive ion etching (NLD-RIE) to fabricate both micro- and nano-channels for investigating proton diffusion enhancement in ferroelectric nanochannels. We have also developed low-temperature direct bonding process between LN wafers. Two-hundred parallel nanochannel array of 200-nm deep and wide and 400-μm long connected to two microchannels (width: 500 μm, depth: 5.9 μm) at the both ends were fabricated. We have succeeded in measuring the proton diffusion coefficient as high as 1.2×10-8 m2/s.",
keywords = "Lithium niobate, magnetic neutral loop discharge reactive ion etching, nanochannel, proton diffusion, surface activated bonding",
author = "Toshiyuki Tsuchiya and Koji Sugano and Hideki Takahashi and Hangyeol Seo and Yuriy Pihosh and Yutaka Kazoe and Kazuma Mawatari and Takehiko Kitamori and Osamu Tabata",
year = "2017",
month = "7",
day = "26",
doi = "10.1109/TRANSDUCERS.2017.7994281",
language = "English",
series = "TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1245--1248",
booktitle = "TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems",

}

TY - GEN

T1 - Dry etching and low-temperature direct bonding process of lithium niobate wafer for fabricating micro/nano channel device

AU - Tsuchiya, Toshiyuki

AU - Sugano, Koji

AU - Takahashi, Hideki

AU - Seo, Hangyeol

AU - Pihosh, Yuriy

AU - Kazoe, Yutaka

AU - Mawatari, Kazuma

AU - Kitamori, Takehiko

AU - Tabata, Osamu

PY - 2017/7/26

Y1 - 2017/7/26

N2 - We have developed dry etching process of lithium niobate (LN) wafer using neutral loop discharge reactive ion etching (NLD-RIE) to fabricate both micro- and nano-channels for investigating proton diffusion enhancement in ferroelectric nanochannels. We have also developed low-temperature direct bonding process between LN wafers. Two-hundred parallel nanochannel array of 200-nm deep and wide and 400-μm long connected to two microchannels (width: 500 μm, depth: 5.9 μm) at the both ends were fabricated. We have succeeded in measuring the proton diffusion coefficient as high as 1.2×10-8 m2/s.

AB - We have developed dry etching process of lithium niobate (LN) wafer using neutral loop discharge reactive ion etching (NLD-RIE) to fabricate both micro- and nano-channels for investigating proton diffusion enhancement in ferroelectric nanochannels. We have also developed low-temperature direct bonding process between LN wafers. Two-hundred parallel nanochannel array of 200-nm deep and wide and 400-μm long connected to two microchannels (width: 500 μm, depth: 5.9 μm) at the both ends were fabricated. We have succeeded in measuring the proton diffusion coefficient as high as 1.2×10-8 m2/s.

KW - Lithium niobate

KW - magnetic neutral loop discharge reactive ion etching

KW - nanochannel

KW - proton diffusion

KW - surface activated bonding

UR - http://www.scopus.com/inward/record.url?scp=85029392891&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85029392891&partnerID=8YFLogxK

U2 - 10.1109/TRANSDUCERS.2017.7994281

DO - 10.1109/TRANSDUCERS.2017.7994281

M3 - Conference contribution

AN - SCOPUS:85029392891

T3 - TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems

SP - 1245

EP - 1248

BT - TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems

PB - Institute of Electrical and Electronics Engineers Inc.

ER -