Dry photochemical selective etching of InGaAs/InAlAs in HBr gas using a 172 nm excimer lamp

Soheil Habibi, Masahiro Totsuka, Jun Tanaka, Takeshi Kinoshita, Satoru Matsumoto, S. Iida

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A new dry photochemical etching process using HBr gas to selectively remove InGaAs layer over an InAlAs layer has been developed. A 172 nm Excimer lamp was used as the photon source for this experiment. The intensity of the 172 nm light on the surface of the samples was 3 mW/cm2. Etch rates of 62 angstrom/min and 0.61 angstrom/min are obtained for InGaAs and InAlAs, respectively, at a chamber pressure of 120 mTorr, sample temperature of 80 °C and HBr flow rate of 10 sccm. These rates translate into a selectivity of over 100 for this material system. Scanning electron microscopy pictures and visual inspection reveal that this process is almost damage free, compared to reactive ion etching. This is due to lack of ion bombardment in the photochemical process. X-ray photoelectron spectroscopy analysis suggests that the etch selectivity mechanism is due to the formation of nonvolatile Al2O3 on the surface of the InAlAs layer. This etching system should be very useful for fabrication of electrical as well as optical devices based on InGaAs/InAlAs heterojunction.

Original languageEnglish
Pages (from-to)247-252
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume13
Issue number2
DOIs
Publication statusPublished - 1995 Mar

Fingerprint

Electric lamps
Etching
Reactive ion etching
Ion bombardment
Optical devices
Gases
Light sources
Heterojunctions
Photons
X ray photoelectron spectroscopy
Inspection
Flow rate
Fabrication
Scanning electron microscopy
Experiments
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Dry photochemical selective etching of InGaAs/InAlAs in HBr gas using a 172 nm excimer lamp. / Habibi, Soheil; Totsuka, Masahiro; Tanaka, Jun; Kinoshita, Takeshi; Matsumoto, Satoru; Iida, S.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 13, No. 2, 03.1995, p. 247-252.

Research output: Contribution to journalArticle

@article{5a612c612c414f0b904b93623f4b1321,
title = "Dry photochemical selective etching of InGaAs/InAlAs in HBr gas using a 172 nm excimer lamp",
abstract = "A new dry photochemical etching process using HBr gas to selectively remove InGaAs layer over an InAlAs layer has been developed. A 172 nm Excimer lamp was used as the photon source for this experiment. The intensity of the 172 nm light on the surface of the samples was 3 mW/cm2. Etch rates of 62 angstrom/min and 0.61 angstrom/min are obtained for InGaAs and InAlAs, respectively, at a chamber pressure of 120 mTorr, sample temperature of 80 °C and HBr flow rate of 10 sccm. These rates translate into a selectivity of over 100 for this material system. Scanning electron microscopy pictures and visual inspection reveal that this process is almost damage free, compared to reactive ion etching. This is due to lack of ion bombardment in the photochemical process. X-ray photoelectron spectroscopy analysis suggests that the etch selectivity mechanism is due to the formation of nonvolatile Al2O3 on the surface of the InAlAs layer. This etching system should be very useful for fabrication of electrical as well as optical devices based on InGaAs/InAlAs heterojunction.",
author = "Soheil Habibi and Masahiro Totsuka and Jun Tanaka and Takeshi Kinoshita and Satoru Matsumoto and S. Iida",
year = "1995",
month = "3",
doi = "10.1116/1.588359",
language = "English",
volume = "13",
pages = "247--252",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "0734-211X",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

TY - JOUR

T1 - Dry photochemical selective etching of InGaAs/InAlAs in HBr gas using a 172 nm excimer lamp

AU - Habibi, Soheil

AU - Totsuka, Masahiro

AU - Tanaka, Jun

AU - Kinoshita, Takeshi

AU - Matsumoto, Satoru

AU - Iida, S.

PY - 1995/3

Y1 - 1995/3

N2 - A new dry photochemical etching process using HBr gas to selectively remove InGaAs layer over an InAlAs layer has been developed. A 172 nm Excimer lamp was used as the photon source for this experiment. The intensity of the 172 nm light on the surface of the samples was 3 mW/cm2. Etch rates of 62 angstrom/min and 0.61 angstrom/min are obtained for InGaAs and InAlAs, respectively, at a chamber pressure of 120 mTorr, sample temperature of 80 °C and HBr flow rate of 10 sccm. These rates translate into a selectivity of over 100 for this material system. Scanning electron microscopy pictures and visual inspection reveal that this process is almost damage free, compared to reactive ion etching. This is due to lack of ion bombardment in the photochemical process. X-ray photoelectron spectroscopy analysis suggests that the etch selectivity mechanism is due to the formation of nonvolatile Al2O3 on the surface of the InAlAs layer. This etching system should be very useful for fabrication of electrical as well as optical devices based on InGaAs/InAlAs heterojunction.

AB - A new dry photochemical etching process using HBr gas to selectively remove InGaAs layer over an InAlAs layer has been developed. A 172 nm Excimer lamp was used as the photon source for this experiment. The intensity of the 172 nm light on the surface of the samples was 3 mW/cm2. Etch rates of 62 angstrom/min and 0.61 angstrom/min are obtained for InGaAs and InAlAs, respectively, at a chamber pressure of 120 mTorr, sample temperature of 80 °C and HBr flow rate of 10 sccm. These rates translate into a selectivity of over 100 for this material system. Scanning electron microscopy pictures and visual inspection reveal that this process is almost damage free, compared to reactive ion etching. This is due to lack of ion bombardment in the photochemical process. X-ray photoelectron spectroscopy analysis suggests that the etch selectivity mechanism is due to the formation of nonvolatile Al2O3 on the surface of the InAlAs layer. This etching system should be very useful for fabrication of electrical as well as optical devices based on InGaAs/InAlAs heterojunction.

UR - http://www.scopus.com/inward/record.url?scp=0029273080&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029273080&partnerID=8YFLogxK

U2 - 10.1116/1.588359

DO - 10.1116/1.588359

M3 - Article

AN - SCOPUS:0029273080

VL - 13

SP - 247

EP - 252

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 0734-211X

IS - 2

ER -