Dynamical properties of impurity clusters in silicon

Jun Yamauchi, N. Aoki, I. Mizushima

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Dynamical properties of several configurations of B12 clusters in Si crystal are studied by means of the first-principles calculations. The cubo-octahedral B12 cluster in Si is found to be unstable against infinitesimal displacement, decaying into an icosahedral B12 cluster or a novel B12 cluster with S4 symmetry. The calculated infrared absorption active modes of the icosahedral B12 cluster in Si are in reasonable agreement with the experimental results, which strongly suggests the existence of the icosahedral B12 cluster in Si after heavily dosed B ion implantation.

Original languageEnglish
Pages (from-to)273-276
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume210
Issue number2
Publication statusPublished - 1998 Dec
Externally publishedYes

Fingerprint

Infrared absorption
Silicon
Ion implantation
Impurities
impurities
Crystals
silicon
infrared absorption
ion implantation
symmetry
configurations
crystals

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Dynamical properties of impurity clusters in silicon. / Yamauchi, Jun; Aoki, N.; Mizushima, I.

In: Physica Status Solidi (B) Basic Research, Vol. 210, No. 2, 12.1998, p. 273-276.

Research output: Contribution to journalArticle

Yamauchi, Jun ; Aoki, N. ; Mizushima, I. / Dynamical properties of impurity clusters in silicon. In: Physica Status Solidi (B) Basic Research. 1998 ; Vol. 210, No. 2. pp. 273-276.
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