Effect of 4d transition metal atom Rh doping on thermoelectric power, magnetic susceptibility, thermal expansion and x-ray photoemission spectra in the charge-transfer type nonmetallic state of NiS

Hideya Ikoma, Masanori Matoba, Mitsuo Mikami, Shuichiro Anzai

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Abstract

We report the following two remarks of the Rh impurity effect on the charge-transfer (CT) type nonmetallic state (below the nonmetal-metal transition temperature: Tt) of 3d transition metal compound NiS. (1) Although the nearest neighbouring M-M (Ni or Rh) and S-S distances increase with increasing x, dTt/dx<0. The Rh substitution gives a broad peak with the Fermi edge. A positive sign of T-linear contribution of the thermoelectric power turns to negative one at the critical concentration (x c) in Ni1-xRhxS. Below Tt, a Curie constant is observed and increases with increasing x. It is suggested that an impurity band introduced by the Rh atoms leads a change of the electronic state of Ni atoms and the suppression of the CT gap. (2) An empirical relation (dTt/d|CN|>0) is found on Ni1-xRh xS, Ni1-δS and NiS1-ySey, where CN is the phonon-drag coefficient. The slope dT t/d|CN| becomes smaller in Ni1-xMxS with the early 3d transition metal impurities (M: Ti, V and Cr).

Original languageEnglish
Pages (from-to)2600-2608
Number of pages9
JournalJournal of the Physical Society of Japan
Volume64
Issue number7
Publication statusPublished - 1995 Jul

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thermal expansion
photoelectric emission
transition metals
charge transfer
magnetic permeability
impurities
drag coefficients
metal compounds
atoms
x rays
transition temperature
slopes
metals

Keywords

  • Charge-transfer type compound
  • Magnetic susceptibility
  • NiRh S
  • Nonmetal-metal transition
  • Thermal expansion
  • Thermoelectric power
  • XPS

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

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title = "Effect of 4d transition metal atom Rh doping on thermoelectric power, magnetic susceptibility, thermal expansion and x-ray photoemission spectra in the charge-transfer type nonmetallic state of NiS",
abstract = "We report the following two remarks of the Rh impurity effect on the charge-transfer (CT) type nonmetallic state (below the nonmetal-metal transition temperature: Tt) of 3d transition metal compound NiS. (1) Although the nearest neighbouring M-M (Ni or Rh) and S-S distances increase with increasing x, dTt/dx<0. The Rh substitution gives a broad peak with the Fermi edge. A positive sign of T-linear contribution of the thermoelectric power turns to negative one at the critical concentration (x c) in Ni1-xRhxS. Below Tt, a Curie constant is observed and increases with increasing x. It is suggested that an impurity band introduced by the Rh atoms leads a change of the electronic state of Ni atoms and the suppression of the CT gap. (2) An empirical relation (dTt/d|CN|>0) is found on Ni1-xRh xS, Ni1-δS and NiS1-ySey, where CN is the phonon-drag coefficient. The slope dT t/d|CN| becomes smaller in Ni1-xMxS with the early 3d transition metal impurities (M: Ti, V and Cr).",
keywords = "Charge-transfer type compound, Magnetic susceptibility, NiRh S, Nonmetal-metal transition, Thermal expansion, Thermoelectric power, XPS",
author = "Hideya Ikoma and Masanori Matoba and Mitsuo Mikami and Shuichiro Anzai",
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T1 - Effect of 4d transition metal atom Rh doping on thermoelectric power, magnetic susceptibility, thermal expansion and x-ray photoemission spectra in the charge-transfer type nonmetallic state of NiS

AU - Ikoma, Hideya

AU - Matoba, Masanori

AU - Mikami, Mitsuo

AU - Anzai, Shuichiro

PY - 1995/7

Y1 - 1995/7

N2 - We report the following two remarks of the Rh impurity effect on the charge-transfer (CT) type nonmetallic state (below the nonmetal-metal transition temperature: Tt) of 3d transition metal compound NiS. (1) Although the nearest neighbouring M-M (Ni or Rh) and S-S distances increase with increasing x, dTt/dx<0. The Rh substitution gives a broad peak with the Fermi edge. A positive sign of T-linear contribution of the thermoelectric power turns to negative one at the critical concentration (x c) in Ni1-xRhxS. Below Tt, a Curie constant is observed and increases with increasing x. It is suggested that an impurity band introduced by the Rh atoms leads a change of the electronic state of Ni atoms and the suppression of the CT gap. (2) An empirical relation (dTt/d|CN|>0) is found on Ni1-xRh xS, Ni1-δS and NiS1-ySey, where CN is the phonon-drag coefficient. The slope dT t/d|CN| becomes smaller in Ni1-xMxS with the early 3d transition metal impurities (M: Ti, V and Cr).

AB - We report the following two remarks of the Rh impurity effect on the charge-transfer (CT) type nonmetallic state (below the nonmetal-metal transition temperature: Tt) of 3d transition metal compound NiS. (1) Although the nearest neighbouring M-M (Ni or Rh) and S-S distances increase with increasing x, dTt/dx<0. The Rh substitution gives a broad peak with the Fermi edge. A positive sign of T-linear contribution of the thermoelectric power turns to negative one at the critical concentration (x c) in Ni1-xRhxS. Below Tt, a Curie constant is observed and increases with increasing x. It is suggested that an impurity band introduced by the Rh atoms leads a change of the electronic state of Ni atoms and the suppression of the CT gap. (2) An empirical relation (dTt/d|CN|>0) is found on Ni1-xRh xS, Ni1-δS and NiS1-ySey, where CN is the phonon-drag coefficient. The slope dT t/d|CN| becomes smaller in Ni1-xMxS with the early 3d transition metal impurities (M: Ti, V and Cr).

KW - Charge-transfer type compound

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KW - NiRh S

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KW - Thermal expansion

KW - Thermoelectric power

KW - XPS

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