Effect of a boron additive on the microstructure and dielectric properties of BaTiO3 thin films formed by nanocrystal deposition

Yoko Takezawa, Minoru Ryu, Yoshiki Iwazaki, Toshimasa Suzuki, Youichi Mizuno, Hiroaki Imai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Highly crystallized BaTiO3 thin films were fabricated by a nanocrystal sintering process. Boron alkoxide was introduced into a slurry of Mn-doped BaTiO3 nanocrystals with particle sizes of 5-7 nm. The deposited nanocrystal film on a (111)-oriented Pt/TiO2/Al 2O3 substrate was sintered at a low temperature of 800 °C and the obtained film had highly densified and oriented microstructures. We found that the boron additive enhanced the grain growth of nanoparticles and as a result the dielectric constant of the thin film increased to 1100 at 10 kHz, which is much higher than that of undoped BaTiO3 thin films.

Original languageEnglish
Title of host publicationElectroceramics in Japan XV
PublisherTrans Tech Publications Ltd
Pages277-280
Number of pages4
ISBN (Print)9783037857618
DOIs
Publication statusPublished - 2013 Jan 1
Event31st Electronics Division Meeting of the Ceramic Society of Japan - Tokyo, Japan
Duration: 2011 Oct 282011 Oct 29

Publication series

NameKey Engineering Materials
Volume566
ISSN (Print)1013-9826
ISSN (Electronic)1662-9795

Other

Other31st Electronics Division Meeting of the Ceramic Society of Japan
CountryJapan
CityTokyo
Period11/10/2811/10/29

Keywords

  • Boron
  • Capacitor
  • Manganese
  • Nanocrystal
  • Thin film

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Takezawa, Y., Ryu, M., Iwazaki, Y., Suzuki, T., Mizuno, Y., & Imai, H. (2013). Effect of a boron additive on the microstructure and dielectric properties of BaTiO3 thin films formed by nanocrystal deposition. In Electroceramics in Japan XV (pp. 277-280). (Key Engineering Materials; Vol. 566). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/KEM.566.277