Abstract
Highly crystallized BaTiO3 thin films were fabricated by a nanocrystal sintering process. Boron alkoxide was introduced into a slurry of Mn-doped BaTiO3 nanocrystals with particle sizes of 5-7 nm. The deposited nanocrystal film on a (111)-oriented Pt/TiO2/Al 2O3 substrate was sintered at a low temperature of 800 °C and the obtained film had highly densified and oriented microstructures. We found that the boron additive enhanced the grain growth of nanoparticles and as a result the dielectric constant of the thin film increased to 1100 at 10 kHz, which is much higher than that of undoped BaTiO3 thin films.
| Original language | English |
|---|---|
| Title of host publication | Key Engineering Materials |
| Pages | 277-280 |
| Number of pages | 4 |
| Volume | 566 |
| DOIs | |
| Publication status | Published - 2013 |
| Event | 31st Electronics Division Meeting of the Ceramic Society of Japan - Tokyo, Japan Duration: 2011 Oct 28 → 2011 Oct 29 |
Publication series
| Name | Key Engineering Materials |
|---|---|
| Volume | 566 |
| ISSN (Print) | 10139826 |
Other
| Other | 31st Electronics Division Meeting of the Ceramic Society of Japan |
|---|---|
| Country | Japan |
| City | Tokyo |
| Period | 11/10/28 → 11/10/29 |
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Keywords
- BaTiO
- Boron
- Capacitor
- Manganese
- Nanocrystal
- Thin film
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
Cite this
Effect of a boron additive on the microstructure and dielectric properties of BaTiO3 thin films formed by nanocrystal deposition. / Takezawa, Yoko; Ryu, Minoru; Iwazaki, Yoshiki; Suzuki, Toshimasa; Mizuno, Youichi; Imai, Hiroaki.
Key Engineering Materials. Vol. 566 2013. p. 277-280 (Key Engineering Materials; Vol. 566).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Effect of a boron additive on the microstructure and dielectric properties of BaTiO3 thin films formed by nanocrystal deposition
AU - Takezawa, Yoko
AU - Ryu, Minoru
AU - Iwazaki, Yoshiki
AU - Suzuki, Toshimasa
AU - Mizuno, Youichi
AU - Imai, Hiroaki
PY - 2013
Y1 - 2013
N2 - Highly crystallized BaTiO3 thin films were fabricated by a nanocrystal sintering process. Boron alkoxide was introduced into a slurry of Mn-doped BaTiO3 nanocrystals with particle sizes of 5-7 nm. The deposited nanocrystal film on a (111)-oriented Pt/TiO2/Al 2O3 substrate was sintered at a low temperature of 800 °C and the obtained film had highly densified and oriented microstructures. We found that the boron additive enhanced the grain growth of nanoparticles and as a result the dielectric constant of the thin film increased to 1100 at 10 kHz, which is much higher than that of undoped BaTiO3 thin films.
AB - Highly crystallized BaTiO3 thin films were fabricated by a nanocrystal sintering process. Boron alkoxide was introduced into a slurry of Mn-doped BaTiO3 nanocrystals with particle sizes of 5-7 nm. The deposited nanocrystal film on a (111)-oriented Pt/TiO2/Al 2O3 substrate was sintered at a low temperature of 800 °C and the obtained film had highly densified and oriented microstructures. We found that the boron additive enhanced the grain growth of nanoparticles and as a result the dielectric constant of the thin film increased to 1100 at 10 kHz, which is much higher than that of undoped BaTiO3 thin films.
KW - BaTiO
KW - Boron
KW - Capacitor
KW - Manganese
KW - Nanocrystal
KW - Thin film
UR - http://www.scopus.com/inward/record.url?scp=84883511343&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84883511343&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/KEM.566.277
DO - 10.4028/www.scientific.net/KEM.566.277
M3 - Conference contribution
AN - SCOPUS:84883511343
SN - 9783037857618
VL - 566
T3 - Key Engineering Materials
SP - 277
EP - 280
BT - Key Engineering Materials
ER -