Effect of a boron additive on the microstructure and dielectric properties of BaTiO3 thin films formed by nanocrystal deposition

Yoko Takezawa; Minoru Ryu; Yoshiki Iwazaki; Toshimasa Suzuki; Youichi Mizuno; Hiroaki Imai

doi:10.4028/www.scientific.net/KEM.566.277

Effect of a boron additive on the microstructure and dielectric properties of BaTiO₃ thin films formed by nanocrystal deposition

Yoko Takezawa, Minoru Ryu, Yoshiki Iwazaki, Toshimasa Suzuki, Youichi Mizuno, Hiroaki Imai

Department of Applied Chemistry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Highly crystallized BaTiO₃ thin films were fabricated by a nanocrystal sintering process. Boron alkoxide was introduced into a slurry of Mn-doped BaTiO₃ nanocrystals with particle sizes of 5-7 nm. The deposited nanocrystal film on a (111)-oriented Pt/TiO₂/Al ₂O₃ substrate was sintered at a low temperature of 800 °C and the obtained film had highly densified and oriented microstructures. We found that the boron additive enhanced the grain growth of nanoparticles and as a result the dielectric constant of the thin film increased to 1100 at 10 kHz, which is much higher than that of undoped BaTiO₃ thin films.

Original language	English
Title of host publication	Electroceramics in Japan XV
Pages	277-280
Number of pages	4
DOIs	https://doi.org/10.4028/www.scientific.net/KEM.566.277
Publication status	Published - 2013 Sep 11
Event	31st Electronics Division Meeting of the Ceramic Society of Japan - Tokyo, Japan Duration: 2011 Oct 28 → 2011 Oct 29

Publication series

Name	Key Engineering Materials
Volume	566
ISSN (Print)	1013-9826

Other

Other	31st Electronics Division Meeting of the Ceramic Society of Japan
Country	Japan
City	Tokyo
Period	11/10/28 → 11/10/29

Fingerprint

Keywords

BaTiO
Boron
Capacitor
Manganese
Nanocrystal
Thin film

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

Cite this

Takezawa, Y., Ryu, M., Iwazaki, Y., Suzuki, T., Mizuno, Y., & Imai, H. (2013). Effect of a boron additive on the microstructure and dielectric properties of BaTiO₃ thin films formed by nanocrystal deposition. In Electroceramics in Japan XV (pp. 277-280). (Key Engineering Materials; Vol. 566). https://doi.org/10.4028/www.scientific.net/KEM.566.277

Effect of a boron additive on the microstructure and dielectric properties of BaTiO₃ thin films formed by nanocrystal deposition. / Takezawa, Yoko; Ryu, Minoru; Iwazaki, Yoshiki; Suzuki, Toshimasa; Mizuno, Youichi; Imai, Hiroaki.

Electroceramics in Japan XV. 2013. p. 277-280 (Key Engineering Materials; Vol. 566).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Takezawa, Y, Ryu, M, Iwazaki, Y, Suzuki, T, Mizuno, Y & Imai, H 2013, Effect of a boron additive on the microstructure and dielectric properties of BaTiO₃ thin films formed by nanocrystal deposition. in Electroceramics in Japan XV. Key Engineering Materials, vol. 566, pp. 277-280, 31st Electronics Division Meeting of the Ceramic Society of Japan, Tokyo, Japan, 11/10/28. https://doi.org/10.4028/www.scientific.net/KEM.566.277

@inproceedings{8168283e6c564a27bcbf4686196ebdb7,

title = "Effect of a boron additive on the microstructure and dielectric properties of BaTiO3 thin films formed by nanocrystal deposition",

abstract = "Highly crystallized BaTiO3 thin films were fabricated by a nanocrystal sintering process. Boron alkoxide was introduced into a slurry of Mn-doped BaTiO3 nanocrystals with particle sizes of 5-7 nm. The deposited nanocrystal film on a (111)-oriented Pt/TiO2/Al 2O3 substrate was sintered at a low temperature of 800 °C and the obtained film had highly densified and oriented microstructures. We found that the boron additive enhanced the grain growth of nanoparticles and as a result the dielectric constant of the thin film increased to 1100 at 10 kHz, which is much higher than that of undoped BaTiO3 thin films.",

keywords = "BaTiO, Boron, Capacitor, Manganese, Nanocrystal, Thin film",

author = "Yoko Takezawa and Minoru Ryu and Yoshiki Iwazaki and Toshimasa Suzuki and Youichi Mizuno and Hiroaki Imai",

year = "2013",

month = sep

day = "11",

doi = "10.4028/www.scientific.net/KEM.566.277",

language = "English",

isbn = "9783037857618",

series = "Key Engineering Materials",

pages = "277--280",

booktitle = "Electroceramics in Japan XV",

note = "31st Electronics Division Meeting of the Ceramic Society of Japan ; Conference date: 28-10-2011 Through 29-10-2011",

}

TY - GEN

T1 - Effect of a boron additive on the microstructure and dielectric properties of BaTiO3 thin films formed by nanocrystal deposition

AU - Takezawa, Yoko

AU - Ryu, Minoru

AU - Iwazaki, Yoshiki

AU - Suzuki, Toshimasa

AU - Mizuno, Youichi

AU - Imai, Hiroaki

PY - 2013/9/11

Y1 - 2013/9/11

N2 - Highly crystallized BaTiO3 thin films were fabricated by a nanocrystal sintering process. Boron alkoxide was introduced into a slurry of Mn-doped BaTiO3 nanocrystals with particle sizes of 5-7 nm. The deposited nanocrystal film on a (111)-oriented Pt/TiO2/Al 2O3 substrate was sintered at a low temperature of 800 °C and the obtained film had highly densified and oriented microstructures. We found that the boron additive enhanced the grain growth of nanoparticles and as a result the dielectric constant of the thin film increased to 1100 at 10 kHz, which is much higher than that of undoped BaTiO3 thin films.

AB - Highly crystallized BaTiO3 thin films were fabricated by a nanocrystal sintering process. Boron alkoxide was introduced into a slurry of Mn-doped BaTiO3 nanocrystals with particle sizes of 5-7 nm. The deposited nanocrystal film on a (111)-oriented Pt/TiO2/Al 2O3 substrate was sintered at a low temperature of 800 °C and the obtained film had highly densified and oriented microstructures. We found that the boron additive enhanced the grain growth of nanoparticles and as a result the dielectric constant of the thin film increased to 1100 at 10 kHz, which is much higher than that of undoped BaTiO3 thin films.

KW - BaTiO

KW - Boron

KW - Capacitor

KW - Manganese

KW - Nanocrystal

KW - Thin film

UR - http://www.scopus.com/inward/record.url?scp=84883511343&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84883511343&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/KEM.566.277

DO - 10.4028/www.scientific.net/KEM.566.277

M3 - Conference contribution

AN - SCOPUS:84883511343

SN - 9783037857618

T3 - Key Engineering Materials

SP - 277

EP - 280

BT - Electroceramics in Japan XV

T2 - 31st Electronics Division Meeting of the Ceramic Society of Japan

Y2 - 28 October 2011 through 29 October 2011

ER -

Access to Document

10.4028/www.scientific.net/KEM.566.277