Effect of a boron additive on the microstructure and dielectric properties of BaTiO3 thin films formed by nanocrystal deposition

Yoko Takezawa; Minoru Ryu; Yoshiki Iwazaki; Toshimasa Suzuki; Youichi Mizuno; Hiroaki Imai

doi:10.4028/www.scientific.net/KEM.566.277

Effect of a boron additive on the microstructure and dielectric properties of BaTiO₃ thin films formed by nanocrystal deposition

Yoko Takezawa, Minoru Ryu, Yoshiki Iwazaki, Toshimasa Suzuki, Youichi Mizuno, Hiroaki Imai

Department of Applied Chemistry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Highly crystallized BaTiO₃ thin films were fabricated by a nanocrystal sintering process. Boron alkoxide was introduced into a slurry of Mn-doped BaTiO₃ nanocrystals with particle sizes of 5-7 nm. The deposited nanocrystal film on a (111)-oriented Pt/TiO₂/Al ₂O₃ substrate was sintered at a low temperature of 800 °C and the obtained film had highly densified and oriented microstructures. We found that the boron additive enhanced the grain growth of nanoparticles and as a result the dielectric constant of the thin film increased to 1100 at 10 kHz, which is much higher than that of undoped BaTiO₃ thin films.

Original language	English
Title of host publication	Electroceramics in Japan XV
Publisher	Trans Tech Publications Ltd
Pages	277-280
Number of pages	4
ISBN (Print)	9783037857618
DOIs	https://doi.org/10.4028/www.scientific.net/KEM.566.277
Publication status	Published - 2013
Event	31st Electronics Division Meeting of the Ceramic Society of Japan - Tokyo, Japan Duration: 2011 Oct 28 → 2011 Oct 29

Publication series

Name	Key Engineering Materials
Volume	566
ISSN (Print)	1013-9826
ISSN (Electronic)	1662-9795

Other

Other	31st Electronics Division Meeting of the Ceramic Society of Japan
Country/Territory	Japan
City	Tokyo
Period	11/10/28 → 11/10/29

Keywords

Boron
Capacitor
Manganese
Nanocrystal
Thin film

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

Access to Document

10.4028/www.scientific.net/KEM.566.277

Cite this

Takezawa, Y., Ryu, M., Iwazaki, Y., Suzuki, T., Mizuno, Y., & Imai, H. (2013). Effect of a boron additive on the microstructure and dielectric properties of BaTiO₃ thin films formed by nanocrystal deposition. In Electroceramics in Japan XV (pp. 277-280). (Key Engineering Materials; Vol. 566). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/KEM.566.277

Effect of a boron additive on the microstructure and dielectric properties of BaTiO₃ thin films formed by nanocrystal deposition. / Takezawa, Yoko; Ryu, Minoru; Iwazaki, Yoshiki et al.

Electroceramics in Japan XV. Trans Tech Publications Ltd, 2013. p. 277-280 (Key Engineering Materials; Vol. 566).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Takezawa, Y, Ryu, M, Iwazaki, Y, Suzuki, T, Mizuno, Y & Imai, H 2013, Effect of a boron additive on the microstructure and dielectric properties of BaTiO₃ thin films formed by nanocrystal deposition. in Electroceramics in Japan XV. Key Engineering Materials, vol. 566, Trans Tech Publications Ltd, pp. 277-280, 31st Electronics Division Meeting of the Ceramic Society of Japan, Tokyo, Japan, 11/10/28. https://doi.org/10.4028/www.scientific.net/KEM.566.277

@inproceedings{8168283e6c564a27bcbf4686196ebdb7,

title = "Effect of a boron additive on the microstructure and dielectric properties of BaTiO3 thin films formed by nanocrystal deposition",

abstract = "Highly crystallized BaTiO3 thin films were fabricated by a nanocrystal sintering process. Boron alkoxide was introduced into a slurry of Mn-doped BaTiO3 nanocrystals with particle sizes of 5-7 nm. The deposited nanocrystal film on a (111)-oriented Pt/TiO2/Al 2O3 substrate was sintered at a low temperature of 800 °C and the obtained film had highly densified and oriented microstructures. We found that the boron additive enhanced the grain growth of nanoparticles and as a result the dielectric constant of the thin film increased to 1100 at 10 kHz, which is much higher than that of undoped BaTiO3 thin films.",

keywords = "Boron, Capacitor, Manganese, Nanocrystal, Thin film",

author = "Yoko Takezawa and Minoru Ryu and Yoshiki Iwazaki and Toshimasa Suzuki and Youichi Mizuno and Hiroaki Imai",

year = "2013",

doi = "10.4028/www.scientific.net/KEM.566.277",

language = "English",

isbn = "9783037857618",

series = "Key Engineering Materials",

publisher = "Trans Tech Publications Ltd",

pages = "277--280",

booktitle = "Electroceramics in Japan XV",

}

TY - GEN

T1 - Effect of a boron additive on the microstructure and dielectric properties of BaTiO3 thin films formed by nanocrystal deposition

AU - Takezawa, Yoko

AU - Ryu, Minoru

AU - Iwazaki, Yoshiki

AU - Suzuki, Toshimasa

AU - Mizuno, Youichi

AU - Imai, Hiroaki

PY - 2013

Y1 - 2013

N2 - Highly crystallized BaTiO3 thin films were fabricated by a nanocrystal sintering process. Boron alkoxide was introduced into a slurry of Mn-doped BaTiO3 nanocrystals with particle sizes of 5-7 nm. The deposited nanocrystal film on a (111)-oriented Pt/TiO2/Al 2O3 substrate was sintered at a low temperature of 800 °C and the obtained film had highly densified and oriented microstructures. We found that the boron additive enhanced the grain growth of nanoparticles and as a result the dielectric constant of the thin film increased to 1100 at 10 kHz, which is much higher than that of undoped BaTiO3 thin films.

AB - Highly crystallized BaTiO3 thin films were fabricated by a nanocrystal sintering process. Boron alkoxide was introduced into a slurry of Mn-doped BaTiO3 nanocrystals with particle sizes of 5-7 nm. The deposited nanocrystal film on a (111)-oriented Pt/TiO2/Al 2O3 substrate was sintered at a low temperature of 800 °C and the obtained film had highly densified and oriented microstructures. We found that the boron additive enhanced the grain growth of nanoparticles and as a result the dielectric constant of the thin film increased to 1100 at 10 kHz, which is much higher than that of undoped BaTiO3 thin films.

KW - Boron

KW - Capacitor

KW - Manganese

KW - Nanocrystal

KW - Thin film

UR - http://www.scopus.com/inward/record.url?scp=84883511343&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84883511343&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/KEM.566.277

DO - 10.4028/www.scientific.net/KEM.566.277

M3 - Conference contribution

AN - SCOPUS:84883511343

SN - 9783037857618

T3 - Key Engineering Materials

SP - 277

EP - 280

BT - Electroceramics in Japan XV

PB - Trans Tech Publications Ltd

T2 - 31st Electronics Division Meeting of the Ceramic Society of Japan

Y2 - 28 October 2011 through 29 October 2011

ER -