Effect of aspect ratio on topographic dependent charging in oxide etching

J. Matsui, K. Maeshige, T. Makabe

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

Consideration is given to a wall conductance inside a trench in SiO2 exposed by plasma etching in order to predict the wall surface charging as a function of the aspect ratio. With a lack of surface conductance, physical and electrical etch stops occur in SiO2 trench etching at high aspect ratios due to the difference of the velocity distribution between the electrons and the positive ions incident on the wafer. The sensitivity to the aspect ratio of the bottom charging potential decreases with the increasing surface electron conductance. The wall potential in the trench exposed to plasma etching in a pulsed operation is simulated in a simplified manner, and is predicted to be decreased by massive negative ions instead of electrons in the off-phase.

Original languageEnglish
Pages (from-to)2950-2955
Number of pages6
JournalJournal of Physics D: Applied Physics
Volume34
Issue number19
DOIs
Publication statusPublished - 2001 Oct 7

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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