Effect of band offset on the open circuit voltage of heterojunction CuIn1-xGaxSe2 solar cells

Akimasa Yamada, Koji Matsubara, Keiichiro Sakurai, Shogo Ishizuka, Hitoshi Tampo, Paul J. Fons, Kakuya Iwata, Shigeru Niki

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36 Citations (Scopus)

Abstract

The reasons behind why the theoretically estimated open circuit voltage (Voc) of CuIn1-xGaxSe2 solar cells with large x values has not been realized are discussed. Typically, the reduction in Voc is estimated only on the basis of the conduction-band offset between the absorber and the window material. The importance of the electron affinity difference between the window and the transparent electrode must also be taken into account. Based upon both of these factors, a material selection guideline is reported for the window and the transparent electrode layers suitable for high-x CuIn1-xGa xSe2 absorber-based solar cells.

Original languageEnglish
Pages (from-to)5607-5609
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number23
DOIs
Publication statusPublished - 2004 Dec 6
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Yamada, A., Matsubara, K., Sakurai, K., Ishizuka, S., Tampo, H., Fons, P. J., Iwata, K., & Niki, S. (2004). Effect of band offset on the open circuit voltage of heterojunction CuIn1-xGaxSe2 solar cells. Applied Physics Letters, 85(23), 5607-5609. https://doi.org/10.1063/1.1831566