Effect of carbon situating at end-of-range defects on silicon self-diffusion investigated using pre-amorphized isotope multilayers

Taiga Isoda, Masashi Uematsu, Kohei M Itoh

Research output: Contribution to journalArticle

Abstract

The effect of implanted carbon (C) on silicon (Si) self-diffusion has been investigated using pre-amorphized 28Si/natSi multilayers. The isotope multilayers were pre-amorphized by Ge implantation followed by C implantation, and annealed at 950 C. Because of the presence of C, the Si selfdiffusion was slower in 30 min annealing than the self-diffusion without C. This was attributed to the trapping of Si self-interstitials by C. On the other hand, the Si self-diffusion with C was faster in 2 h annealing than the self-diffusion without C, except in the end-of-range (EOR) defect region. The cause of this enhanced diffusion was understood as the retardation of Ostwald ripening of EOR defects by C trapped at the defects. In the EOR defect region, however, Si self-diffusion was slower than the self-diffusion without C in both 30min and 2 h annealing owing to the presence of C. Relaxation of the tensile strain associated with the EOR defects by the trapped C was proposed to be the main cause of the retarded diffusion in the EOR region.

Original languageEnglish
Article number036504
JournalJapanese Journal of Applied Physics
Volume55
Issue number3
DOIs
Publication statusPublished - 2016 Mar 1

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Isotopes
Multilayers
isotopes
Silicon
Defects
Carbon
carbon
defects
silicon
annealing
implantation
Annealing
Ostwald ripening
causes
Tensile strain
interstitials
trapping

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Effect of carbon situating at end-of-range defects on silicon self-diffusion investigated using pre-amorphized isotope multilayers. / Isoda, Taiga; Uematsu, Masashi; Itoh, Kohei M.

In: Japanese Journal of Applied Physics, Vol. 55, No. 3, 036504, 01.03.2016.

Research output: Contribution to journalArticle

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N2 - The effect of implanted carbon (C) on silicon (Si) self-diffusion has been investigated using pre-amorphized 28Si/natSi multilayers. The isotope multilayers were pre-amorphized by Ge implantation followed by C implantation, and annealed at 950 C. Because of the presence of C, the Si selfdiffusion was slower in 30 min annealing than the self-diffusion without C. This was attributed to the trapping of Si self-interstitials by C. On the other hand, the Si self-diffusion with C was faster in 2 h annealing than the self-diffusion without C, except in the end-of-range (EOR) defect region. The cause of this enhanced diffusion was understood as the retardation of Ostwald ripening of EOR defects by C trapped at the defects. In the EOR defect region, however, Si self-diffusion was slower than the self-diffusion without C in both 30min and 2 h annealing owing to the presence of C. Relaxation of the tensile strain associated with the EOR defects by the trapped C was proposed to be the main cause of the retarded diffusion in the EOR region.

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