Effect of double-layered SiO2-Si3N4 films on formation of stacking fault-free region in silicon

Kazuhiko Kakishita, Akihiko Otani, Eiji Ohta, Makoto Sakata

Research output: Contribution to journalArticle

Abstract

We have studied the effect of surface conditions on the formation of a stacking fault-free region. The specimens with and without double-layered SiO2-Si3N4 films were heat-treated at 750°C for 64 h and then annealed in vacuum at 1050-1150°C for 0.5-128 h. In the specimens with double-layered films, a stacking fault-free region was formed beneath the Si-SiO2 interface, while it was formed beneath the surface in the bare specimens. Its thickness increased depending on the annealing time. The thickness of the stacking fault-free region in the bare specimens was two to three times wider than that in the specimens with double-layered films. This difference can be explained using a model in which the Si-SiO2 interface acts as a sink of self-interstitials and the bare surface acts as not only a sink of self-interstitials, but also as a source of vacancies.

Original languageEnglish
Pages (from-to)1147-1153
Number of pages7
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume28
Issue number7
Publication statusPublished - 1989 Jul

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Stacking faults
crystal defects
Silicon
silicon
sinks
interstitials
Vacancies
Vacuum
Annealing
heat
vacuum
annealing

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Effect of double-layered SiO2-Si3N4 films on formation of stacking fault-free region in silicon. / Kakishita, Kazuhiko; Otani, Akihiko; Ohta, Eiji; Sakata, Makoto.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 28, No. 7, 07.1989, p. 1147-1153.

Research output: Contribution to journalArticle

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