Effect of energy relaxation of H0 atoms at the wall on the production profile of H- ions in large negative ion sources

N. Takado, D. Matsushita, I. Fujino, Akiyoshi Hatayama, H. Tobari, T. Inoue

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Production and transport processes of the H0 atoms are numerically simulated using a three-dimensional Monte Carlo transport code. The code is applied to the large JAEA 10 ampere negative ion source under a Cs-seeded condition to obtain a spatial distribution of surface-produced H- ions. In this analysis, we focus on the effect of the energy relaxation of the H0 atoms at the wall on the H- ion production from the H0 atoms. The result indicates that, by considering the energy relaxation of the H0 atoms at the wall, the production profile of the surface-produced H- ion is well reflected in the production profile of the H0 atom production.

Original languageEnglish
Article number02A503
JournalReview of Scientific Instruments
Volume79
Issue number2
DOIs
Publication statusPublished - 2008

Fingerprint

Ion sources
Heavy ions
negative ions
ion sources
Negative ions
Atoms
Ions
profiles
atoms
ions
energy
Spatial distribution
spatial distribution

ASJC Scopus subject areas

  • Instrumentation
  • Physics and Astronomy (miscellaneous)

Cite this

Effect of energy relaxation of H0 atoms at the wall on the production profile of H- ions in large negative ion sources. / Takado, N.; Matsushita, D.; Fujino, I.; Hatayama, Akiyoshi; Tobari, H.; Inoue, T.

In: Review of Scientific Instruments, Vol. 79, No. 2, 02A503, 2008.

Research output: Contribution to journalArticle

Takado, N. ; Matsushita, D. ; Fujino, I. ; Hatayama, Akiyoshi ; Tobari, H. ; Inoue, T. / Effect of energy relaxation of H0 atoms at the wall on the production profile of H- ions in large negative ion sources. In: Review of Scientific Instruments. 2008 ; Vol. 79, No. 2.
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AU - Inoue, T.

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