Effect of fluorine on the suppression of boron diffusion in pre-amorphized silicon

Ryotaro Kiga; Masashi Uematsu; Kohei M. Itoh

doi:10.1063/5.0015405

Effect of fluorine on the suppression of boron diffusion in pre-amorphized silicon

Ryotaro Kiga, Masashi Uematsu, Kohei M. Itoh

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article › peer-review

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Abstract

The effect of fluorine (F) on diffusion of boron (B) in silicon (Si) is investigated by secondary ion mass spectrometry of Si, B, and F diffusion using pre-amorphized natSi/28Si isotope multilayers that are co-implanted with B and F. By the presence of F, diffusion of B is suppressed while that of Si is enhanced. A quantitative analysis of the experimental results based on our diffusion model shows that the suppression of B diffusion is due to (1) Si interstitial undersaturation caused by the time-dependent formation and dissolution of F-vacancy (FV) clusters and (2) direct interaction between B and FV clusters. The model developed in this study enables an accurate simulation of B and Si diffusion in the presence of F in Si.

Original language	English
Article number	105701-1
Journal	Journal of Applied Physics
Volume	128
Issue number	10
DOIs	https://doi.org/10.1063/5.0015405
Publication status	Published - 2020 Sept 14

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/5.0015405

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title = "Effect of fluorine on the suppression of boron diffusion in pre-amorphized silicon",

abstract = "The effect of fluorine (F) on diffusion of boron (B) in silicon (Si) is investigated by secondary ion mass spectrometry of Si, B, and F diffusion using pre-amorphized natSi/28Si isotope multilayers that are co-implanted with B and F. By the presence of F, diffusion of B is suppressed while that of Si is enhanced. A quantitative analysis of the experimental results based on our diffusion model shows that the suppression of B diffusion is due to (1) Si interstitial undersaturation caused by the time-dependent formation and dissolution of F-vacancy (FV) clusters and (2) direct interaction between B and FV clusters. The model developed in this study enables an accurate simulation of B and Si diffusion in the presence of F in Si. ",

author = "Ryotaro Kiga and Masashi Uematsu and Itoh, {Kohei M.}",

note = "Funding Information: We acknowledge Yasuo Shimizu for fruitful discussions. This work was supported in part by Grants-in-Aid for Scientific Research from the Japan Society for the Promotion of Science (No. 17K06397). Publisher Copyright: {\textcopyright} 2020 Author(s).",

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T1 - Effect of fluorine on the suppression of boron diffusion in pre-amorphized silicon

AU - Kiga, Ryotaro

AU - Uematsu, Masashi

AU - Itoh, Kohei M.

N1 - Funding Information: We acknowledge Yasuo Shimizu for fruitful discussions. This work was supported in part by Grants-in-Aid for Scientific Research from the Japan Society for the Promotion of Science (No. 17K06397). Publisher Copyright: © 2020 Author(s).

PY - 2020/9/14

Y1 - 2020/9/14

N2 - The effect of fluorine (F) on diffusion of boron (B) in silicon (Si) is investigated by secondary ion mass spectrometry of Si, B, and F diffusion using pre-amorphized natSi/28Si isotope multilayers that are co-implanted with B and F. By the presence of F, diffusion of B is suppressed while that of Si is enhanced. A quantitative analysis of the experimental results based on our diffusion model shows that the suppression of B diffusion is due to (1) Si interstitial undersaturation caused by the time-dependent formation and dissolution of F-vacancy (FV) clusters and (2) direct interaction between B and FV clusters. The model developed in this study enables an accurate simulation of B and Si diffusion in the presence of F in Si.

AB - The effect of fluorine (F) on diffusion of boron (B) in silicon (Si) is investigated by secondary ion mass spectrometry of Si, B, and F diffusion using pre-amorphized natSi/28Si isotope multilayers that are co-implanted with B and F. By the presence of F, diffusion of B is suppressed while that of Si is enhanced. A quantitative analysis of the experimental results based on our diffusion model shows that the suppression of B diffusion is due to (1) Si interstitial undersaturation caused by the time-dependent formation and dissolution of F-vacancy (FV) clusters and (2) direct interaction between B and FV clusters. The model developed in this study enables an accurate simulation of B and Si diffusion in the presence of F in Si.

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Effect of fluorine on the suppression of boron diffusion in pre-amorphized silicon

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