Effect of indium substitution on the thermoelectric properties of orthorhombic Cu4SnS4

Yosuke Goto; Yoichi Kamihara; Masanori Matoba

doi:10.1007/s11664-014-3007-7

Effect of indium substitution on the thermoelectric properties of orthorhombic Cu₄SnS₄

Yosuke Goto, Yoichi Kamihara, Masanori Matoba

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We report the thermoelectric properties of Cu₄In _x Sn_1-x S₄ (x = 0-0.02), which undergoes a first-order structural phase transition at ∼230 K. Substitution of In³⁺ for Sn⁴⁺ suppresses the phase transition temperature (T _t). Indium substitution reduces the electrical resistivity, and degenerate conduction by the orthorhombic phase is observed. The Seebeck coefficient increases over the whole temperature range and a maximum value occurs in the monoclinic phase as a result of indium substitution. Thermal conductivity decreases as x increases, which enhances the dimensionless figure of merit, ZT. We therefore expect optimization of the chemical composition of indium-doped Cu₄SnS₄ to result in an even larger ZT value.

Original language	English
Pages (from-to)	2202-2205
Number of pages	4
Journal	Journal of Electronic Materials
Volume	43
Issue number	6
DOIs	https://doi.org/10.1007/s11664-014-3007-7
Publication status	Published - 2014 Jun

Keywords

Thermoelectric material
copper sulfide
first-order phase transition

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1007/s11664-014-3007-7

Cite this

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title = "Effect of indium substitution on the thermoelectric properties of orthorhombic Cu4SnS4",

abstract = "We report the thermoelectric properties of Cu4In x Sn1-x S4 (x = 0-0.02), which undergoes a first-order structural phase transition at ∼230 K. Substitution of In3+ for Sn4+ suppresses the phase transition temperature (T t). Indium substitution reduces the electrical resistivity, and degenerate conduction by the orthorhombic phase is observed. The Seebeck coefficient increases over the whole temperature range and a maximum value occurs in the monoclinic phase as a result of indium substitution. Thermal conductivity decreases as x increases, which enhances the dimensionless figure of merit, ZT. We therefore expect optimization of the chemical composition of indium-doped Cu4SnS4 to result in an even larger ZT value.",

keywords = "Thermoelectric material, copper sulfide, first-order phase transition",

author = "Yosuke Goto and Yoichi Kamihara and Masanori Matoba",

note = "Funding Information: This work was partially supported by research grants from Keio University, the Keio Leading-edge Laboratory of Science and Technology (KLL), and the Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST) from the Japan Society for Promotion of Science (JSPS).",

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T1 - Effect of indium substitution on the thermoelectric properties of orthorhombic Cu4SnS4

AU - Goto, Yosuke

AU - Kamihara, Yoichi

AU - Matoba, Masanori

N1 - Funding Information: This work was partially supported by research grants from Keio University, the Keio Leading-edge Laboratory of Science and Technology (KLL), and the Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST) from the Japan Society for Promotion of Science (JSPS).

PY - 2014/6

Y1 - 2014/6

N2 - We report the thermoelectric properties of Cu4In x Sn1-x S4 (x = 0-0.02), which undergoes a first-order structural phase transition at ∼230 K. Substitution of In3+ for Sn4+ suppresses the phase transition temperature (T t). Indium substitution reduces the electrical resistivity, and degenerate conduction by the orthorhombic phase is observed. The Seebeck coefficient increases over the whole temperature range and a maximum value occurs in the monoclinic phase as a result of indium substitution. Thermal conductivity decreases as x increases, which enhances the dimensionless figure of merit, ZT. We therefore expect optimization of the chemical composition of indium-doped Cu4SnS4 to result in an even larger ZT value.

AB - We report the thermoelectric properties of Cu4In x Sn1-x S4 (x = 0-0.02), which undergoes a first-order structural phase transition at ∼230 K. Substitution of In3+ for Sn4+ suppresses the phase transition temperature (T t). Indium substitution reduces the electrical resistivity, and degenerate conduction by the orthorhombic phase is observed. The Seebeck coefficient increases over the whole temperature range and a maximum value occurs in the monoclinic phase as a result of indium substitution. Thermal conductivity decreases as x increases, which enhances the dimensionless figure of merit, ZT. We therefore expect optimization of the chemical composition of indium-doped Cu4SnS4 to result in an even larger ZT value.

KW - Thermoelectric material

KW - copper sulfide

KW - first-order phase transition

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