Effect of indium substitution on the thermoelectric properties of orthorhombic Cu4SnS4

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We report the thermoelectric properties of Cu4In x Sn1-x S4 (x = 0-0.02), which undergoes a first-order structural phase transition at ∼230 K. Substitution of In3+ for Sn4+ suppresses the phase transition temperature (T t). Indium substitution reduces the electrical resistivity, and degenerate conduction by the orthorhombic phase is observed. The Seebeck coefficient increases over the whole temperature range and a maximum value occurs in the monoclinic phase as a result of indium substitution. Thermal conductivity decreases as x increases, which enhances the dimensionless figure of merit, ZT. We therefore expect optimization of the chemical composition of indium-doped Cu4SnS4 to result in an even larger ZT value.

Original languageEnglish
Pages (from-to)2202-2205
Number of pages4
JournalJournal of Electronic Materials
Volume43
Issue number6
DOIs
Publication statusPublished - 2014

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Indium
indium
Substitution reactions
substitutes
Phase transitions
Seebeck coefficient
Seebeck effect
figure of merit
Superconducting transition temperature
Thermal conductivity
chemical composition
thermal conductivity
transition temperature
conduction
electrical resistivity
optimization
Chemical analysis
Temperature
temperature

Keywords

  • copper sulfide
  • first-order phase transition
  • Thermoelectric material

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Effect of indium substitution on the thermoelectric properties of orthorhombic Cu4SnS4. / Goto, Yosuke; Kamihara, Yoichi; Matoba, Masanori.

In: Journal of Electronic Materials, Vol. 43, No. 6, 2014, p. 2202-2205.

Research output: Contribution to journalArticle

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AB - We report the thermoelectric properties of Cu4In x Sn1-x S4 (x = 0-0.02), which undergoes a first-order structural phase transition at ∼230 K. Substitution of In3+ for Sn4+ suppresses the phase transition temperature (T t). Indium substitution reduces the electrical resistivity, and degenerate conduction by the orthorhombic phase is observed. The Seebeck coefficient increases over the whole temperature range and a maximum value occurs in the monoclinic phase as a result of indium substitution. Thermal conductivity decreases as x increases, which enhances the dimensionless figure of merit, ZT. We therefore expect optimization of the chemical composition of indium-doped Cu4SnS4 to result in an even larger ZT value.

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