The effect of surface roughness at the nanoscale on direct-wafer bond quality was investigated. The bond quality was evaluated by measurement of the effective bonding energy. It was shown that the experimental results revealed a clear correlation between the bonding energy and the bearing ratio. It was found that a bearing depth of ∼1.4 nm is appropriate for the characterization of direct-bonded silicon at room temperature.
ASJC Scopus subject areas
- Physics and Astronomy(all)