Effect of nanoscale surface roughness on the bonding energy of direct-bonded silicon wafers

N. Miki; S. M. Spearing

doi:10.1063/1.1621086

Effect of nanoscale surface roughness on the bonding energy of direct-bonded silicon wafers

N. Miki, S. M. Spearing

Research output: Contribution to journal › Article › peer-review

64 Citations (Scopus)

Abstract

The effect of surface roughness at the nanoscale on direct-wafer bond quality was investigated. The bond quality was evaluated by measurement of the effective bonding energy. It was shown that the experimental results revealed a clear correlation between the bonding energy and the bearing ratio. It was found that a bearing depth of ∼1.4 nm is appropriate for the characterization of direct-bonded silicon at room temperature.

Original language	English
Pages (from-to)	6800-6806
Number of pages	7
Journal	Journal of Applied Physics
Volume	94
Issue number	10
DOIs	https://doi.org/10.1063/1.1621086
Publication status	Published - 2003 Nov 15
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.1621086

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abstract = "The effect of surface roughness at the nanoscale on direct-wafer bond quality was investigated. The bond quality was evaluated by measurement of the effective bonding energy. It was shown that the experimental results revealed a clear correlation between the bonding energy and the bearing ratio. It was found that a bearing depth of ∼1.4 nm is appropriate for the characterization of direct-bonded silicon at room temperature.",

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AB - The effect of surface roughness at the nanoscale on direct-wafer bond quality was investigated. The bond quality was evaluated by measurement of the effective bonding energy. It was shown that the experimental results revealed a clear correlation between the bonding energy and the bearing ratio. It was found that a bearing depth of ∼1.4 nm is appropriate for the characterization of direct-bonded silicon at room temperature.

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Effect of nanoscale surface roughness on the bonding energy of direct-bonded silicon wafers

Abstract

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