Effect of nanoscale surface roughness on the bonding energy of direct-bonded silicon wafers

Norihisa Miki, S. M. Spearing

Research output: Contribution to journalArticle

53 Citations (Scopus)

Abstract

The effect of surface roughness at the nanoscale on direct-wafer bond quality was investigated. The bond quality was evaluated by measurement of the effective bonding energy. It was shown that the experimental results revealed a clear correlation between the bonding energy and the bearing ratio. It was found that a bearing depth of ∼1.4 nm is appropriate for the characterization of direct-bonded silicon at room temperature.

Original languageEnglish
Pages (from-to)6800-6806
Number of pages7
JournalJournal of Applied Physics
Volume94
Issue number10
DOIs
Publication statusPublished - 2003 Nov 15
Externally publishedYes

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surface roughness
wafers
silicon
energy
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Effect of nanoscale surface roughness on the bonding energy of direct-bonded silicon wafers. / Miki, Norihisa; Spearing, S. M.

In: Journal of Applied Physics, Vol. 94, No. 10, 15.11.2003, p. 6800-6806.

Research output: Contribution to journalArticle

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