Effect of relative tool sharpness on subsurface damage and material recovery in nanometric cutting of mono-crystalline silicon: A molecular dynamics approach

Seyed Nader Ameli Kalkhoran, Mehrdad Vahdati, Jiwang Yan

Research output: Contribution to journalArticle

Abstract

Depth of cut (h0) and tool edge radius (re) are two key parameters in nanometric cutting, investigating both of the two parameters simultaneously can provide comprehensive understanding of the cutting mechanism. In this paper, relative tool sharpness (RTS), which is quantified as h0/re, is employed as a factor to examine the subsurface damage and material recovery in nanometric cutting of mono-crystalline silicon using molecular dynamics (MD) simulation. Various RTS values were generated by changes of cutting depth at different tool edge radius of 1, 3 and 5 nm respectively. Results indicate that there is always a layer of particles which sticks on the tool surface and influences the machined surface, even at RTS = 0. Besides that, the increase of RTS results in subsurface damage layer serration, which is caused by stick-slip phenomenon between the tool and workpiece. A bigger RTS causes a bigger depth of serrations, although the number of serrations remains constant. Increase in RTS also causes the formation of the hexagonal diamond structure. The material recovery drops dramatically by RTS increase. Using a sharper tool edge (RTS<0.25) at a cutting depths below 1 nm does not necessarily decrease subsurface damage due to the drastic stress concentration. It is also demonstrated that silicon amorphisation can occur in the unmachined region in front of the tool due to the hydrostatic pressure wave caused by tool advancement.

Original languageEnglish
Article number104868
JournalMaterials Science in Semiconductor Processing
Volume108
DOIs
Publication statusPublished - 2020 Mar 15

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materials recovery
sharpness
Silicon
Molecular dynamics
recovery
molecular dynamics
Crystalline materials
damage
Recovery
silicon

Keywords

  • Material recovery
  • Molecular dynamics
  • Mono-crystalline silicon
  • Nanometric cutting
  • Relative tool sharpness
  • Subsurface damage

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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title = "Effect of relative tool sharpness on subsurface damage and material recovery in nanometric cutting of mono-crystalline silicon: A molecular dynamics approach",
abstract = "Depth of cut (h0) and tool edge radius (re) are two key parameters in nanometric cutting, investigating both of the two parameters simultaneously can provide comprehensive understanding of the cutting mechanism. In this paper, relative tool sharpness (RTS), which is quantified as h0/re, is employed as a factor to examine the subsurface damage and material recovery in nanometric cutting of mono-crystalline silicon using molecular dynamics (MD) simulation. Various RTS values were generated by changes of cutting depth at different tool edge radius of 1, 3 and 5 nm respectively. Results indicate that there is always a layer of particles which sticks on the tool surface and influences the machined surface, even at RTS = 0. Besides that, the increase of RTS results in subsurface damage layer serration, which is caused by stick-slip phenomenon between the tool and workpiece. A bigger RTS causes a bigger depth of serrations, although the number of serrations remains constant. Increase in RTS also causes the formation of the hexagonal diamond structure. The material recovery drops dramatically by RTS increase. Using a sharper tool edge (RTS<0.25) at a cutting depths below 1 nm does not necessarily decrease subsurface damage due to the drastic stress concentration. It is also demonstrated that silicon amorphisation can occur in the unmachined region in front of the tool due to the hydrostatic pressure wave caused by tool advancement.",
keywords = "Material recovery, Molecular dynamics, Mono-crystalline silicon, Nanometric cutting, Relative tool sharpness, Subsurface damage",
author = "{Ameli Kalkhoran}, {Seyed Nader} and Mehrdad Vahdati and Jiwang Yan",
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T2 - A molecular dynamics approach

AU - Ameli Kalkhoran, Seyed Nader

AU - Vahdati, Mehrdad

AU - Yan, Jiwang

PY - 2020/3/15

Y1 - 2020/3/15

N2 - Depth of cut (h0) and tool edge radius (re) are two key parameters in nanometric cutting, investigating both of the two parameters simultaneously can provide comprehensive understanding of the cutting mechanism. In this paper, relative tool sharpness (RTS), which is quantified as h0/re, is employed as a factor to examine the subsurface damage and material recovery in nanometric cutting of mono-crystalline silicon using molecular dynamics (MD) simulation. Various RTS values were generated by changes of cutting depth at different tool edge radius of 1, 3 and 5 nm respectively. Results indicate that there is always a layer of particles which sticks on the tool surface and influences the machined surface, even at RTS = 0. Besides that, the increase of RTS results in subsurface damage layer serration, which is caused by stick-slip phenomenon between the tool and workpiece. A bigger RTS causes a bigger depth of serrations, although the number of serrations remains constant. Increase in RTS also causes the formation of the hexagonal diamond structure. The material recovery drops dramatically by RTS increase. Using a sharper tool edge (RTS<0.25) at a cutting depths below 1 nm does not necessarily decrease subsurface damage due to the drastic stress concentration. It is also demonstrated that silicon amorphisation can occur in the unmachined region in front of the tool due to the hydrostatic pressure wave caused by tool advancement.

AB - Depth of cut (h0) and tool edge radius (re) are two key parameters in nanometric cutting, investigating both of the two parameters simultaneously can provide comprehensive understanding of the cutting mechanism. In this paper, relative tool sharpness (RTS), which is quantified as h0/re, is employed as a factor to examine the subsurface damage and material recovery in nanometric cutting of mono-crystalline silicon using molecular dynamics (MD) simulation. Various RTS values were generated by changes of cutting depth at different tool edge radius of 1, 3 and 5 nm respectively. Results indicate that there is always a layer of particles which sticks on the tool surface and influences the machined surface, even at RTS = 0. Besides that, the increase of RTS results in subsurface damage layer serration, which is caused by stick-slip phenomenon between the tool and workpiece. A bigger RTS causes a bigger depth of serrations, although the number of serrations remains constant. Increase in RTS also causes the formation of the hexagonal diamond structure. The material recovery drops dramatically by RTS increase. Using a sharper tool edge (RTS<0.25) at a cutting depths below 1 nm does not necessarily decrease subsurface damage due to the drastic stress concentration. It is also demonstrated that silicon amorphisation can occur in the unmachined region in front of the tool due to the hydrostatic pressure wave caused by tool advancement.

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