Effect of Si/SiO 2 interface on silicon and boron diffusion in thermally grown SiO 2

Shigeto Fukatsu, Kohei M. Itoh, Masashi Uematsu, Hiroyuki Kageshima, Yasuo Takahashi, Kenji Shiraishi

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Silicon self-diffusion and boron diffusion in SiO 2 were investigated as functions of the distance of diffusing silicon from the Si/SiO 2 interface at various temperatures in the range of 1150-1250°C using natSiO 2/ 28SiO 2 isotope heterostructures and 30Si- and B-implanted 28SiO 2 without and with a 30-nm-thick silicon nitride layer on the surface of each sample. The self-diffusivity of Si in SiO 2 did not depend on the oxygen concentration in the annealing ambient without the silicon nitride layer. The diffusion profiles of Si and B in the sample capped with the silicon nitride layer became broader as the distance from the Si/SiO 2 interface decreased. This dependence on the distance from the interface was caused by SiO molecules, which are generated at the interface and diffuse into SiO 2. The simulated results, taking into account the role of SiO molecules, showed good agreement with each experimental profile of 30Si and B.

Original languageEnglish
Pages (from-to)7837-7842
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number11 B
DOIs
Publication statusPublished - 2004 Nov 1

Keywords

  • Gate insulator
  • Self-diffusion
  • Silicon dioxide
  • Silicon electronics

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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