We present evidence for anomalously large, strain-dependent interdiffusion in InAs1-xPx layers grown on InP(001) substrates by organometallic vapor phase epitaxy at 620 °C. Specifically, there are strong indications for the existence of a "critical strain:" if the strain is ∼1.9% or more, much P-As mixing occurs, but for smaller strain the mixing is greatly decreased. The interdiffusion is also highly sensitive to temperature. A set of samples grown at 580 °C exhibits a factor of ∼2 decrease in P-As mixing compared to a set grown at 620 °C.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)