Effect of substrate-induced strain on the structural, electrical, and optical properties of polycrystalline ZnO thin films

R. Ghosh, D. Basak, Shinobu Fujihara

Research output: Contribution to journalArticle

373 Citations (Scopus)

Abstract

The effect of substrate-induced strain on the structural, electrical and optical properties of polycrystalline ZnO thin films was studied using x-ray diffraction, scanning electron microscopy, electrical resistivity and photoluminescence measurements. The orientation, crystallite size, and electrical resistivity were found to depend strongly upon the substrate induced strain along the c axis. A relatively large tensile strain was shown to exist in ZnO deposited on sapphire and glass, while a smaller compressive strain was found in film deposited on GaN. The results show that GaN, being a closely lattice matched substrate, produces ZnO films of better crystallinity with lower resistivity.

Original languageEnglish
Pages (from-to)2689-2692
Number of pages4
JournalJournal of Applied Physics
Volume96
Issue number5
DOIs
Publication statusPublished - 2004 Sep 1

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electrical properties
optical properties
electrical resistivity
thin films
crystallinity
sapphire
x ray diffraction
photoluminescence
scanning electron microscopy
glass

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Effect of substrate-induced strain on the structural, electrical, and optical properties of polycrystalline ZnO thin films. / Ghosh, R.; Basak, D.; Fujihara, Shinobu.

In: Journal of Applied Physics, Vol. 96, No. 5, 01.09.2004, p. 2689-2692.

Research output: Contribution to journalArticle

@article{02c8bf893a1a4273bc6268e264e85808,
title = "Effect of substrate-induced strain on the structural, electrical, and optical properties of polycrystalline ZnO thin films",
abstract = "The effect of substrate-induced strain on the structural, electrical and optical properties of polycrystalline ZnO thin films was studied using x-ray diffraction, scanning electron microscopy, electrical resistivity and photoluminescence measurements. The orientation, crystallite size, and electrical resistivity were found to depend strongly upon the substrate induced strain along the c axis. A relatively large tensile strain was shown to exist in ZnO deposited on sapphire and glass, while a smaller compressive strain was found in film deposited on GaN. The results show that GaN, being a closely lattice matched substrate, produces ZnO films of better crystallinity with lower resistivity.",
author = "R. Ghosh and D. Basak and Shinobu Fujihara",
year = "2004",
month = "9",
day = "1",
doi = "10.1063/1.1769598",
language = "English",
volume = "96",
pages = "2689--2692",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "5",

}

TY - JOUR

T1 - Effect of substrate-induced strain on the structural, electrical, and optical properties of polycrystalline ZnO thin films

AU - Ghosh, R.

AU - Basak, D.

AU - Fujihara, Shinobu

PY - 2004/9/1

Y1 - 2004/9/1

N2 - The effect of substrate-induced strain on the structural, electrical and optical properties of polycrystalline ZnO thin films was studied using x-ray diffraction, scanning electron microscopy, electrical resistivity and photoluminescence measurements. The orientation, crystallite size, and electrical resistivity were found to depend strongly upon the substrate induced strain along the c axis. A relatively large tensile strain was shown to exist in ZnO deposited on sapphire and glass, while a smaller compressive strain was found in film deposited on GaN. The results show that GaN, being a closely lattice matched substrate, produces ZnO films of better crystallinity with lower resistivity.

AB - The effect of substrate-induced strain on the structural, electrical and optical properties of polycrystalline ZnO thin films was studied using x-ray diffraction, scanning electron microscopy, electrical resistivity and photoluminescence measurements. The orientation, crystallite size, and electrical resistivity were found to depend strongly upon the substrate induced strain along the c axis. A relatively large tensile strain was shown to exist in ZnO deposited on sapphire and glass, while a smaller compressive strain was found in film deposited on GaN. The results show that GaN, being a closely lattice matched substrate, produces ZnO films of better crystallinity with lower resistivity.

UR - http://www.scopus.com/inward/record.url?scp=4944221246&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4944221246&partnerID=8YFLogxK

U2 - 10.1063/1.1769598

DO - 10.1063/1.1769598

M3 - Article

AN - SCOPUS:4944221246

VL - 96

SP - 2689

EP - 2692

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 5

ER -