Effect of substrate temperature on hardness and transparency of SiOC(-H) thin films synthesized by atmospheric pressure plasma enhanced CVD method

Mayui Noborisaka, So Nagashima, Hidetaka Hayashi, Naoharu Ueda, Kyoko Kumagai, Akira Shirakura, Tetsuya Suzuki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Silicon-based films have gained much interest as protective coatings for transparent polymeric materials. In this study, SiOC(-H) thin films were deposited on polycarbonate (PC) or Si substrates from trimethylsilane (TrMS) gas diluted with He gas by atmospheric pressure plasma enhanced CVD (AP-PECVD) method with varying substrate temperature, and transparency and hardness of the films were investigated. The films exhibited a good optical transparency with an optical transmittance of about 90% irrespective of the substrate temperature, and the hardness increased from 0.6 to 1.3 GPa as the substrate temperature increased from 60 to 140°C. The results are discussed in terms of chemical structural changes in the films according to the substrate temperature.

Original languageEnglish
Title of host publicationAmorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011
Pages217-222
Number of pages6
DOIs
Publication statusPublished - 2012 Jan 1
Event2011 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2011 Apr 252011 Apr 29

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1321
ISSN (Print)0272-9172

Other

Other2011 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period11/4/2511/4/29

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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