Abstract
The influence of Si/SiO2 interface on Si self-diffusion in SiO2 was analyzed. For protecting the SiO2 layer from oxygen during annealing half the surface area of each implanted wafer was capped with a ∼30-nm-thick silicon nitride layer. It was found that by placing the silicon-nitride capping layers the diffusion coefficient increased by an order of magnitude with decreasing SiO2 thickness. The results show that the Si species diffusing into SiO2, emitted at the Si/SiO2 have a strong influence on the self-diffusivity of Si in SiO2.
Original language | English |
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Pages (from-to) | 3897-3899 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 83 |
Issue number | 19 |
DOIs | |
Publication status | Published - 2003 Nov 10 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)