Effect of the Si/SiO2 interface on self-diffusion of Si in semiconductor-grade SiO2

Shigeto Fukatsu; Tomonori Takahashi; Kohei M. Itoh; Masashi Uematsu; Akira Fujiwara; Hiroyuki Kageshima; Yasuo Takahashi; Kenji Shiraishi; Ulrich Gösele

doi:10.1063/1.1625775

Effect of the Si/SiO₂ interface on self-diffusion of Si in semiconductor-grade SiO₂

Shigeto Fukatsu, Tomonori Takahashi, Kohei M. Itoh, Masashi Uematsu, Akira Fujiwara, Hiroyuki Kageshima, Yasuo Takahashi, Kenji Shiraishi, Ulrich Gösele

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article › peer-review

65 Citations (Scopus)

Abstract

The influence of Si/SiO₂ interface on Si self-diffusion in SiO₂ was analyzed. For protecting the SiO₂ layer from oxygen during annealing half the surface area of each implanted wafer was capped with a ∼30-nm-thick silicon nitride layer. It was found that by placing the silicon-nitride capping layers the diffusion coefficient increased by an order of magnitude with decreasing SiO₂ thickness. The results show that the Si species diffusing into SiO₂, emitted at the Si/SiO₂ have a strong influence on the self-diffusivity of Si in SiO₂.

Original language	English
Pages (from-to)	3897-3899
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	19
DOIs	https://doi.org/10.1063/1.1625775
Publication status	Published - 2003 Nov 10

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "The influence of Si/SiO2 interface on Si self-diffusion in SiO2 was analyzed. For protecting the SiO2 layer from oxygen during annealing half the surface area of each implanted wafer was capped with a ∼30-nm-thick silicon nitride layer. It was found that by placing the silicon-nitride capping layers the diffusion coefficient increased by an order of magnitude with decreasing SiO2 thickness. The results show that the Si species diffusing into SiO2, emitted at the Si/SiO2 have a strong influence on the self-diffusivity of Si in SiO2.",

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AU - Fukatsu, Shigeto

AU - Takahashi, Tomonori

AU - Itoh, Kohei M.

AU - Uematsu, Masashi

AU - Fujiwara, Akira

AU - Kageshima, Hiroyuki

AU - Takahashi, Yasuo

AU - Shiraishi, Kenji

AU - Gösele, Ulrich

PY - 2003/11/10

Y1 - 2003/11/10

N2 - The influence of Si/SiO2 interface on Si self-diffusion in SiO2 was analyzed. For protecting the SiO2 layer from oxygen during annealing half the surface area of each implanted wafer was capped with a ∼30-nm-thick silicon nitride layer. It was found that by placing the silicon-nitride capping layers the diffusion coefficient increased by an order of magnitude with decreasing SiO2 thickness. The results show that the Si species diffusing into SiO2, emitted at the Si/SiO2 have a strong influence on the self-diffusivity of Si in SiO2.

AB - The influence of Si/SiO2 interface on Si self-diffusion in SiO2 was analyzed. For protecting the SiO2 layer from oxygen during annealing half the surface area of each implanted wafer was capped with a ∼30-nm-thick silicon nitride layer. It was found that by placing the silicon-nitride capping layers the diffusion coefficient increased by an order of magnitude with decreasing SiO2 thickness. The results show that the Si species diffusing into SiO2, emitted at the Si/SiO2 have a strong influence on the self-diffusivity of Si in SiO2.

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Effect of the Si/SiO₂ interface on self-diffusion of Si in semiconductor-grade SiO₂

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