Abstract
The influence of Si/SiO2 interface on Si self-diffusion in SiO2 was analyzed. For protecting the SiO2 layer from oxygen during annealing half the surface area of each implanted wafer was capped with a ∼30-nm-thick silicon nitride layer. It was found that by placing the silicon-nitride capping layers the diffusion coefficient increased by an order of magnitude with decreasing SiO2 thickness. The results show that the Si species diffusing into SiO2, emitted at the Si/SiO2 have a strong influence on the self-diffusivity of Si in SiO2.
| Original language | English |
|---|---|
| Pages (from-to) | 3897-3899 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 83 |
| Issue number | 19 |
| DOIs | |
| Publication status | Published - 2003 Nov 10 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Effect of the Si/SiO2 interface on self-diffusion of Si in semiconductor-grade SiO2 . / Fukatsu, Shigeto; Takahashi, Tomonori; Itoh, Kohei M; Uematsu, Masashi; Fujiwara, Akira; Kageshima, Hiroyuki; Takahashi, Yasuo; Shiraishi, Kenji; Gösele, Ulrich.
In: Applied Physics Letters, Vol. 83, No. 19, 10.11.2003, p. 3897-3899.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effect of the Si/SiO2 interface on self-diffusion of Si in semiconductor-grade SiO2
AU - Fukatsu, Shigeto
AU - Takahashi, Tomonori
AU - Itoh, Kohei M
AU - Uematsu, Masashi
AU - Fujiwara, Akira
AU - Kageshima, Hiroyuki
AU - Takahashi, Yasuo
AU - Shiraishi, Kenji
AU - Gösele, Ulrich
PY - 2003/11/10
Y1 - 2003/11/10
N2 - The influence of Si/SiO2 interface on Si self-diffusion in SiO2 was analyzed. For protecting the SiO2 layer from oxygen during annealing half the surface area of each implanted wafer was capped with a ∼30-nm-thick silicon nitride layer. It was found that by placing the silicon-nitride capping layers the diffusion coefficient increased by an order of magnitude with decreasing SiO2 thickness. The results show that the Si species diffusing into SiO2, emitted at the Si/SiO2 have a strong influence on the self-diffusivity of Si in SiO2.
AB - The influence of Si/SiO2 interface on Si self-diffusion in SiO2 was analyzed. For protecting the SiO2 layer from oxygen during annealing half the surface area of each implanted wafer was capped with a ∼30-nm-thick silicon nitride layer. It was found that by placing the silicon-nitride capping layers the diffusion coefficient increased by an order of magnitude with decreasing SiO2 thickness. The results show that the Si species diffusing into SiO2, emitted at the Si/SiO2 have a strong influence on the self-diffusivity of Si in SiO2.
UR - http://www.scopus.com/inward/record.url?scp=0344945503&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0344945503&partnerID=8YFLogxK
U2 - 10.1063/1.1625775
DO - 10.1063/1.1625775
M3 - Article
AN - SCOPUS:0344945503
VL - 83
SP - 3897
EP - 3899
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 19
ER -