Effect of the Si/SiO2 interface on self-diffusion of Si in semiconductor-grade SiO2

Shigeto Fukatsu; Tomonori Takahashi; Kohei M. Itoh; Masashi Uematsu; Akira Fujiwara; Hiroyuki Kageshima; Yasuo Takahashi; Kenji Shiraishi; Ulrich Gösele

doi:10.1063/1.1625775

Effect of the Si/SiO₂ interface on self-diffusion of Si in semiconductor-grade SiO₂

Shigeto Fukatsu, Tomonori Takahashi, Kohei M. Itoh, Masashi Uematsu, Akira Fujiwara, Hiroyuki Kageshima, Yasuo Takahashi, Kenji Shiraishi, Ulrich Gösele

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article › peer-review

65 Citations (Scopus)

Abstract

The influence of Si/SiO₂ interface on Si self-diffusion in SiO₂ was analyzed. For protecting the SiO₂ layer from oxygen during annealing half the surface area of each implanted wafer was capped with a ∼30-nm-thick silicon nitride layer. It was found that by placing the silicon-nitride capping layers the diffusion coefficient increased by an order of magnitude with decreasing SiO₂ thickness. The results show that the Si species diffusing into SiO₂, emitted at the Si/SiO₂ have a strong influence on the self-diffusivity of Si in SiO₂.

Original language	English
Pages (from-to)	3897-3899
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	19
DOIs	https://doi.org/10.1063/1.1625775
Publication status	Published - 2003 Nov 10

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1625775

Cite this

Effect of the Si/SiO₂ interface on self-diffusion of Si in semiconductor-grade SiO₂. / Fukatsu, Shigeto; Takahashi, Tomonori; Itoh, Kohei M.; Uematsu, Masashi; Fujiwara, Akira; Kageshima, Hiroyuki; Takahashi, Yasuo; Shiraishi, Kenji; Gösele, Ulrich.

In: Applied Physics Letters, Vol. 83, No. 19, 10.11.2003, p. 3897-3899.

Research output: Contribution to journal › Article › peer-review

@article{8c399bd2a8e74c7786ff57bda885c3e2,

title = "Effect of the Si/SiO2 interface on self-diffusion of Si in semiconductor-grade SiO2",

abstract = "The influence of Si/SiO2 interface on Si self-diffusion in SiO2 was analyzed. For protecting the SiO2 layer from oxygen during annealing half the surface area of each implanted wafer was capped with a ∼30-nm-thick silicon nitride layer. It was found that by placing the silicon-nitride capping layers the diffusion coefficient increased by an order of magnitude with decreasing SiO2 thickness. The results show that the Si species diffusing into SiO2, emitted at the Si/SiO2 have a strong influence on the self-diffusivity of Si in SiO2.",

author = "Shigeto Fukatsu and Tomonori Takahashi and Itoh, {Kohei M.} and Masashi Uematsu and Akira Fujiwara and Hiroyuki Kageshima and Yasuo Takahashi and Kenji Shiraishi and Ulrich G{\"o}sele",

year = "2003",

month = nov,

day = "10",

doi = "10.1063/1.1625775",

language = "English",

volume = "83",

pages = "3897--3899",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "19",

}

TY - JOUR

T1 - Effect of the Si/SiO2 interface on self-diffusion of Si in semiconductor-grade SiO2

AU - Fukatsu, Shigeto

AU - Takahashi, Tomonori

AU - Itoh, Kohei M.

AU - Uematsu, Masashi

AU - Fujiwara, Akira

AU - Kageshima, Hiroyuki

AU - Takahashi, Yasuo

AU - Shiraishi, Kenji

AU - Gösele, Ulrich

PY - 2003/11/10

Y1 - 2003/11/10

N2 - The influence of Si/SiO2 interface on Si self-diffusion in SiO2 was analyzed. For protecting the SiO2 layer from oxygen during annealing half the surface area of each implanted wafer was capped with a ∼30-nm-thick silicon nitride layer. It was found that by placing the silicon-nitride capping layers the diffusion coefficient increased by an order of magnitude with decreasing SiO2 thickness. The results show that the Si species diffusing into SiO2, emitted at the Si/SiO2 have a strong influence on the self-diffusivity of Si in SiO2.

AB - The influence of Si/SiO2 interface on Si self-diffusion in SiO2 was analyzed. For protecting the SiO2 layer from oxygen during annealing half the surface area of each implanted wafer was capped with a ∼30-nm-thick silicon nitride layer. It was found that by placing the silicon-nitride capping layers the diffusion coefficient increased by an order of magnitude with decreasing SiO2 thickness. The results show that the Si species diffusing into SiO2, emitted at the Si/SiO2 have a strong influence on the self-diffusivity of Si in SiO2.

UR - http://www.scopus.com/inward/record.url?scp=0344945503&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0344945503&partnerID=8YFLogxK

U2 - 10.1063/1.1625775

DO - 10.1063/1.1625775

M3 - Article

AN - SCOPUS:0344945503

VL - 83

SP - 3897

EP - 3899

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 19

ER -

Effect of the Si/SiO₂ interface on self-diffusion of Si in semiconductor-grade SiO₂

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this