Effect of the Si/SiO2 interface on self-diffusion of Si in semiconductor-grade SiO2

Shigeto Fukatsu, Tomonori Takahashi, Kohei M. Itoh, Masashi Uematsu, Akira Fujiwara, Hiroyuki Kageshima, Yasuo Takahashi, Kenji Shiraishi, Ulrich Gösele

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Abstract

The influence of Si/SiO2 interface on Si self-diffusion in SiO2 was analyzed. For protecting the SiO2 layer from oxygen during annealing half the surface area of each implanted wafer was capped with a ∼30-nm-thick silicon nitride layer. It was found that by placing the silicon-nitride capping layers the diffusion coefficient increased by an order of magnitude with decreasing SiO2 thickness. The results show that the Si species diffusing into SiO2, emitted at the Si/SiO2 have a strong influence on the self-diffusivity of Si in SiO2.

Original languageEnglish
Pages (from-to)3897-3899
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number19
DOIs
Publication statusPublished - 2003 Nov 10

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Fukatsu, S., Takahashi, T., Itoh, K. M., Uematsu, M., Fujiwara, A., Kageshima, H., Takahashi, Y., Shiraishi, K., & Gösele, U. (2003). Effect of the Si/SiO2 interface on self-diffusion of Si in semiconductor-grade SiO2. Applied Physics Letters, 83(19), 3897-3899. https://doi.org/10.1063/1.1625775