Effect of the Si/SiO2 interface on self-diffusion of Si in semiconductor-grade SiO2

Shigeto Fukatsu, Tomonori Takahashi, Kohei M Itoh, Masashi Uematsu, Akira Fujiwara, Hiroyuki Kageshima, Yasuo Takahashi, Kenji Shiraishi, Ulrich Gösele

Research output: Contribution to journalArticle

58 Citations (Scopus)

Abstract

The influence of Si/SiO2 interface on Si self-diffusion in SiO2 was analyzed. For protecting the SiO2 layer from oxygen during annealing half the surface area of each implanted wafer was capped with a ∼30-nm-thick silicon nitride layer. It was found that by placing the silicon-nitride capping layers the diffusion coefficient increased by an order of magnitude with decreasing SiO2 thickness. The results show that the Si species diffusing into SiO2, emitted at the Si/SiO2 have a strong influence on the self-diffusivity of Si in SiO2.

Original languageEnglish
Pages (from-to)3897-3899
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number19
DOIs
Publication statusPublished - 2003 Nov 10

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grade
silicon nitrides
diffusivity
diffusion coefficient
wafers
annealing
oxygen

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Fukatsu, S., Takahashi, T., Itoh, K. M., Uematsu, M., Fujiwara, A., Kageshima, H., ... Gösele, U. (2003). Effect of the Si/SiO2 interface on self-diffusion of Si in semiconductor-grade SiO2 Applied Physics Letters, 83(19), 3897-3899. https://doi.org/10.1063/1.1625775

Effect of the Si/SiO2 interface on self-diffusion of Si in semiconductor-grade SiO2 . / Fukatsu, Shigeto; Takahashi, Tomonori; Itoh, Kohei M; Uematsu, Masashi; Fujiwara, Akira; Kageshima, Hiroyuki; Takahashi, Yasuo; Shiraishi, Kenji; Gösele, Ulrich.

In: Applied Physics Letters, Vol. 83, No. 19, 10.11.2003, p. 3897-3899.

Research output: Contribution to journalArticle

Fukatsu, S, Takahashi, T, Itoh, KM, Uematsu, M, Fujiwara, A, Kageshima, H, Takahashi, Y, Shiraishi, K & Gösele, U 2003, 'Effect of the Si/SiO2 interface on self-diffusion of Si in semiconductor-grade SiO2 ', Applied Physics Letters, vol. 83, no. 19, pp. 3897-3899. https://doi.org/10.1063/1.1625775
Fukatsu, Shigeto ; Takahashi, Tomonori ; Itoh, Kohei M ; Uematsu, Masashi ; Fujiwara, Akira ; Kageshima, Hiroyuki ; Takahashi, Yasuo ; Shiraishi, Kenji ; Gösele, Ulrich. / Effect of the Si/SiO2 interface on self-diffusion of Si in semiconductor-grade SiO2 In: Applied Physics Letters. 2003 ; Vol. 83, No. 19. pp. 3897-3899.
@article{8c399bd2a8e74c7786ff57bda885c3e2,
title = "Effect of the Si/SiO2 interface on self-diffusion of Si in semiconductor-grade SiO2",
abstract = "The influence of Si/SiO2 interface on Si self-diffusion in SiO2 was analyzed. For protecting the SiO2 layer from oxygen during annealing half the surface area of each implanted wafer was capped with a ∼30-nm-thick silicon nitride layer. It was found that by placing the silicon-nitride capping layers the diffusion coefficient increased by an order of magnitude with decreasing SiO2 thickness. The results show that the Si species diffusing into SiO2, emitted at the Si/SiO2 have a strong influence on the self-diffusivity of Si in SiO2.",
author = "Shigeto Fukatsu and Tomonori Takahashi and Itoh, {Kohei M} and Masashi Uematsu and Akira Fujiwara and Hiroyuki Kageshima and Yasuo Takahashi and Kenji Shiraishi and Ulrich G{\"o}sele",
year = "2003",
month = "11",
day = "10",
doi = "10.1063/1.1625775",
language = "English",
volume = "83",
pages = "3897--3899",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "19",

}

TY - JOUR

T1 - Effect of the Si/SiO2 interface on self-diffusion of Si in semiconductor-grade SiO2

AU - Fukatsu, Shigeto

AU - Takahashi, Tomonori

AU - Itoh, Kohei M

AU - Uematsu, Masashi

AU - Fujiwara, Akira

AU - Kageshima, Hiroyuki

AU - Takahashi, Yasuo

AU - Shiraishi, Kenji

AU - Gösele, Ulrich

PY - 2003/11/10

Y1 - 2003/11/10

N2 - The influence of Si/SiO2 interface on Si self-diffusion in SiO2 was analyzed. For protecting the SiO2 layer from oxygen during annealing half the surface area of each implanted wafer was capped with a ∼30-nm-thick silicon nitride layer. It was found that by placing the silicon-nitride capping layers the diffusion coefficient increased by an order of magnitude with decreasing SiO2 thickness. The results show that the Si species diffusing into SiO2, emitted at the Si/SiO2 have a strong influence on the self-diffusivity of Si in SiO2.

AB - The influence of Si/SiO2 interface on Si self-diffusion in SiO2 was analyzed. For protecting the SiO2 layer from oxygen during annealing half the surface area of each implanted wafer was capped with a ∼30-nm-thick silicon nitride layer. It was found that by placing the silicon-nitride capping layers the diffusion coefficient increased by an order of magnitude with decreasing SiO2 thickness. The results show that the Si species diffusing into SiO2, emitted at the Si/SiO2 have a strong influence on the self-diffusivity of Si in SiO2.

UR - http://www.scopus.com/inward/record.url?scp=0344945503&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0344945503&partnerID=8YFLogxK

U2 - 10.1063/1.1625775

DO - 10.1063/1.1625775

M3 - Article

AN - SCOPUS:0344945503

VL - 83

SP - 3897

EP - 3899

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 19

ER -