Effect of the Si/SiO2 interface on self-diffusion of Si in semiconductor-grade SiO2

Shigeto Fukatsu; Tomonori Takahashi; Kohei M. Itoh; Masashi Uematsu; Akira Fujiwara; Hiroyuki Kageshima; Yasuo Takahashi; Kenji Shiraishi; Ulrich Gösele

doi:10.1063/1.1625775

Effect of the Si/SiO₂ interface on self-diffusion of Si in semiconductor-grade SiO₂

Shigeto Fukatsu, Tomonori Takahashi, Kohei M. Itoh, Masashi Uematsu, Akira Fujiwara, Hiroyuki Kageshima, Yasuo Takahashi, Kenji Shiraishi, Ulrich Gösele

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article › peer-review

62 Citations (Scopus)

Abstract

The influence of Si/SiO₂ interface on Si self-diffusion in SiO₂ was analyzed. For protecting the SiO₂ layer from oxygen during annealing half the surface area of each implanted wafer was capped with a ∼30-nm-thick silicon nitride layer. It was found that by placing the silicon-nitride capping layers the diffusion coefficient increased by an order of magnitude with decreasing SiO₂ thickness. The results show that the Si species diffusing into SiO₂, emitted at the Si/SiO₂ have a strong influence on the self-diffusivity of Si in SiO₂.

Original language	English
Pages (from-to)	3897-3899
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	19
DOIs	https://doi.org/10.1063/1.1625775
Publication status	Published - 2003 Nov 10

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Effect of the Si/SiO₂ interface on self-diffusion of Si in semiconductor-grade SiO₂. / Fukatsu, Shigeto; Takahashi, Tomonori; Itoh, Kohei M.; Uematsu, Masashi; Fujiwara, Akira; Kageshima, Hiroyuki; Takahashi, Yasuo; Shiraishi, Kenji; Gösele, Ulrich.

In: Applied Physics Letters, Vol. 83, No. 19, 10.11.2003, p. 3897-3899.

Research output: Contribution to journal › Article › peer-review

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