Effective insulating properties of autooxidized monolayers using organic ditellurides

Tohru Nakamura, Satoshi Yasuda, Takayuki Miyamae, Hisakazu Nozoye, Nobuhiko Kobayashi, Hiroshi Kondoh, Ikuyo Nakai, Toshiaki Ohta, Daisuke Yoshimura, Mutsuyoshi Matsumoto

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

Dialkyl ditellurides adsorb on Au(111) surfaces by wet deposition to form highly resistive autooxidized monolayers (AMs) due to the automatic formation of oxidized tellurium species after the adsorption of ditellurides on the surfaces under air in contrast to the case of the lighter dichalcogenides such as disulfides and diselenides. The ditelluride AMs could be applied to the selective fabrication of effective resistance, ferroelectric layers, piezoelectric parts, and/or new imaging systems using the feature of tellurium oxide in small device circuits.

Original languageEnglish
Pages (from-to)12642-12643
Number of pages2
JournalJournal of the American Chemical Society
Volume124
Issue number43
DOIs
Publication statusPublished - 2002 Oct 30
Externally publishedYes

ASJC Scopus subject areas

  • Catalysis
  • Chemistry(all)
  • Biochemistry
  • Colloid and Surface Chemistry

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    Nakamura, T., Yasuda, S., Miyamae, T., Nozoye, H., Kobayashi, N., Kondoh, H., Nakai, I., Ohta, T., Yoshimura, D., & Matsumoto, M. (2002). Effective insulating properties of autooxidized monolayers using organic ditellurides. Journal of the American Chemical Society, 124(43), 12642-12643. https://doi.org/10.1021/ja0276671