Effective mass anomalies in strained-Si thin films and crystals

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Using first-principles calculations, effective mass for silicon channel region is investigated as a function of strain and substrate thickness. In {111} and {110} biaxially strained-Si, it is found that the longitudinal effective mass is extraordinarily enhanced for both thin films and crystals. This mass enhancement is caused by the change of the band structure with double minima into that with a single minimum due to strain and confinement. It is analytically shown that the effective mass diverges at the transition point. Further, we suggest the parameter regions of the strain, thickness, and confinement direction, which are most suitable for the experimental observation of the anomalies.

Original languageEnglish
Pages (from-to)186-188
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number2
DOIs
Publication statusPublished - 2008 Feb

Fingerprint

Thin films
Crystals
Silicon
Band structure
Substrates
Direction compound

Keywords

  • Silicon
  • Silicon-on-insulator (SOI) technology
  • Simulation
  • Strain
  • Thin films

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Effective mass anomalies in strained-Si thin films and crystals. / Yamauchi, Jun.

In: IEEE Electron Device Letters, Vol. 29, No. 2, 02.2008, p. 186-188.

Research output: Contribution to journalArticle

@article{fb90b41a5f954a53aafff06af6cfd34a,
title = "Effective mass anomalies in strained-Si thin films and crystals",
abstract = "Using first-principles calculations, effective mass for silicon channel region is investigated as a function of strain and substrate thickness. In {111} and {110} biaxially strained-Si, it is found that the longitudinal effective mass is extraordinarily enhanced for both thin films and crystals. This mass enhancement is caused by the change of the band structure with double minima into that with a single minimum due to strain and confinement. It is analytically shown that the effective mass diverges at the transition point. Further, we suggest the parameter regions of the strain, thickness, and confinement direction, which are most suitable for the experimental observation of the anomalies.",
keywords = "Silicon, Silicon-on-insulator (SOI) technology, Simulation, Strain, Thin films",
author = "Jun Yamauchi",
year = "2008",
month = "2",
doi = "10.1109/LED.2007.914096",
language = "English",
volume = "29",
pages = "186--188",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",

}

TY - JOUR

T1 - Effective mass anomalies in strained-Si thin films and crystals

AU - Yamauchi, Jun

PY - 2008/2

Y1 - 2008/2

N2 - Using first-principles calculations, effective mass for silicon channel region is investigated as a function of strain and substrate thickness. In {111} and {110} biaxially strained-Si, it is found that the longitudinal effective mass is extraordinarily enhanced for both thin films and crystals. This mass enhancement is caused by the change of the band structure with double minima into that with a single minimum due to strain and confinement. It is analytically shown that the effective mass diverges at the transition point. Further, we suggest the parameter regions of the strain, thickness, and confinement direction, which are most suitable for the experimental observation of the anomalies.

AB - Using first-principles calculations, effective mass for silicon channel region is investigated as a function of strain and substrate thickness. In {111} and {110} biaxially strained-Si, it is found that the longitudinal effective mass is extraordinarily enhanced for both thin films and crystals. This mass enhancement is caused by the change of the band structure with double minima into that with a single minimum due to strain and confinement. It is analytically shown that the effective mass diverges at the transition point. Further, we suggest the parameter regions of the strain, thickness, and confinement direction, which are most suitable for the experimental observation of the anomalies.

KW - Silicon

KW - Silicon-on-insulator (SOI) technology

KW - Simulation

KW - Strain

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=39549107105&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=39549107105&partnerID=8YFLogxK

U2 - 10.1109/LED.2007.914096

DO - 10.1109/LED.2007.914096

M3 - Article

AN - SCOPUS:39549107105

VL - 29

SP - 186

EP - 188

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 2

ER -