Abstract
Using a first-principles calculation, we systematically investigated the effective-mass anomalies in 〈111〉- and 〈110〉-confined Si thin films. The surface terminators, which correspond to the interface between the Si channel and the insulator in real devices, do not have a significant effect on the effective mass anomalies. The effective-mass behaviors as a function of the substrate thickness and the strain is qualitatively well explained by the extended effective-mass approximation using the bulk effective-mass along the confinement direction.
Original language | English |
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Pages (from-to) | 3273-3276 |
Number of pages | 4 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 46 |
Issue number | 5 B |
DOIs | |
Publication status | Published - 2007 May 17 |
Keywords
- Ab initio
- Confinement
- Density functional calculation
- Effective mass
- First-principles calculation
- SOI
- Si
- Strain
- Substrate thickness
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)