Effects of body reverse pulse bias on geometric component of charge pumping current in FD SOI MOSFETs

Tran Ngoc Duyet, Hiroki Ishikuro, Makoto Takamiya, Takuya Saraya, Toshiro Hiramoto

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

The effects of the body reverse pulse bias on the geometric component of charge pumping current (Icp) in fully depleted (FD) silicon on insulator (SOI) MOSFETs were examined. MOSFETs fabricated on separation by implantation of oxygen (SIMOX) wafers with n+poly gate were used for the study. The reversed pulse method was found to be better than the DC reverse method in that it does not cause an undesirable shortening effect of the channel length. The measured CP current is therefore more precise, and consequently a more accurate interface state density can be obtained.

Original languageEnglish
Pages79-80
Number of pages2
Publication statusPublished - 1998 Dec 1
Externally publishedYes
EventProceedings of the 1998 IEEE International SOI Conference - Stuart, FL, USA
Duration: 1998 Oct 51998 Oct 8

Other

OtherProceedings of the 1998 IEEE International SOI Conference
CityStuart, FL, USA
Period98/10/598/10/8

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Duyet, T. N., Ishikuro, H., Takamiya, M., Saraya, T., & Hiramoto, T. (1998). Effects of body reverse pulse bias on geometric component of charge pumping current in FD SOI MOSFETs. 79-80. Paper presented at Proceedings of the 1998 IEEE International SOI Conference, Stuart, FL, USA, .