Abstract
The effects of the body reverse pulse bias on the geometric component of charge pumping current (Icp) in fully depleted (FD) silicon on insulator (SOI) MOSFETs were examined. MOSFETs fabricated on separation by implantation of oxygen (SIMOX) wafers with n+poly gate were used for the study. The reversed pulse method was found to be better than the DC reverse method in that it does not cause an undesirable shortening effect of the channel length. The measured CP current is therefore more precise, and consequently a more accurate interface state density can be obtained.
| Original language | English |
|---|---|
| Pages | 79-80 |
| Number of pages | 2 |
| Publication status | Published - 1998 Dec 1 |
| Externally published | Yes |
| Event | Proceedings of the 1998 IEEE International SOI Conference - Stuart, FL, USA Duration: 1998 Oct 5 → 1998 Oct 8 |
Other
| Other | Proceedings of the 1998 IEEE International SOI Conference |
|---|---|
| City | Stuart, FL, USA |
| Period | 98/10/5 → 98/10/8 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Duyet, T. N., Ishikuro, H., Takamiya, M., Saraya, T., & Hiramoto, T. (1998). Effects of body reverse pulse bias on geometric component of charge pumping current in FD SOI MOSFETs. 79-80. Paper presented at Proceedings of the 1998 IEEE International SOI Conference, Stuart, FL, USA, .