Abstract
The effects of the body reverse pulse bias on the geometric component of charge pumping current (Icp) in fully depleted (FD) silicon on insulator (SOI) MOSFETs were examined. MOSFETs fabricated on separation by implantation of oxygen (SIMOX) wafers with n+poly gate were used for the study. The reversed pulse method was found to be better than the DC reverse method in that it does not cause an undesirable shortening effect of the channel length. The measured CP current is therefore more precise, and consequently a more accurate interface state density can be obtained.
| Original language | English |
|---|---|
| Title of host publication | IEEE International SOI Conference |
| Editors | Anon |
| Publisher | IEEE |
| Pages | 79-80 |
| Number of pages | 2 |
| Publication status | Published - 1998 |
| Externally published | Yes |
| Event | Proceedings of the 1998 IEEE International SOI Conference - Stuart, FL, USA Duration: 1998 Oct 5 → 1998 Oct 8 |
Other
| Other | Proceedings of the 1998 IEEE International SOI Conference |
|---|---|
| City | Stuart, FL, USA |
| Period | 98/10/5 → 98/10/8 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Effects of body reverse pulse bias on geometric component of charge pumping current in FD SOI MOSFETs. / Duyet, Tran Ngoc; Ishikuro, Hiroki; Takamiya, Makoto; Saraya, Takuya; Hiramoto, Toshiro.
IEEE International SOI Conference. ed. / Anon. IEEE, 1998. p. 79-80.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Effects of body reverse pulse bias on geometric component of charge pumping current in FD SOI MOSFETs
AU - Duyet, Tran Ngoc
AU - Ishikuro, Hiroki
AU - Takamiya, Makoto
AU - Saraya, Takuya
AU - Hiramoto, Toshiro
PY - 1998
Y1 - 1998
N2 - The effects of the body reverse pulse bias on the geometric component of charge pumping current (Icp) in fully depleted (FD) silicon on insulator (SOI) MOSFETs were examined. MOSFETs fabricated on separation by implantation of oxygen (SIMOX) wafers with n+poly gate were used for the study. The reversed pulse method was found to be better than the DC reverse method in that it does not cause an undesirable shortening effect of the channel length. The measured CP current is therefore more precise, and consequently a more accurate interface state density can be obtained.
AB - The effects of the body reverse pulse bias on the geometric component of charge pumping current (Icp) in fully depleted (FD) silicon on insulator (SOI) MOSFETs were examined. MOSFETs fabricated on separation by implantation of oxygen (SIMOX) wafers with n+poly gate were used for the study. The reversed pulse method was found to be better than the DC reverse method in that it does not cause an undesirable shortening effect of the channel length. The measured CP current is therefore more precise, and consequently a more accurate interface state density can be obtained.
UR - http://www.scopus.com/inward/record.url?scp=0032313687&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0032313687&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0032313687
SP - 79
EP - 80
BT - IEEE International SOI Conference
A2 - Anon, null
PB - IEEE
ER -