Effects of body reverse pulse bias on geometric component of charge pumping current in FD SOI MOSFETs

Tran Ngoc Duyet; Hiroki Ishikuro; Makoto Takamiya; Takuya Saraya; Toshiro Hiramoto

Effects of body reverse pulse bias on geometric component of charge pumping current in FD SOI MOSFETs

Tran Ngoc Duyet, Hiroki Ishikuro, Makoto Takamiya, Takuya Saraya, Toshiro Hiramoto

Research output: Contribution to conference › Paper

Abstract

The effects of the body reverse pulse bias on the geometric component of charge pumping current (Icp) in fully depleted (FD) silicon on insulator (SOI) MOSFETs were examined. MOSFETs fabricated on separation by implantation of oxygen (SIMOX) wafers with n+poly gate were used for the study. The reversed pulse method was found to be better than the DC reverse method in that it does not cause an undesirable shortening effect of the channel length. The measured CP current is therefore more precise, and consequently a more accurate interface state density can be obtained.

Original language	English
Pages	79-80
Number of pages	2
Publication status	Published - 1998 Dec 1
Externally published	Yes
Event	Proceedings of the 1998 IEEE International SOI Conference - Stuart, FL, USA Duration: 1998 Oct 5 → 1998 Oct 8

Other

Other	Proceedings of the 1998 IEEE International SOI Conference
City	Stuart, FL, USA
Period	98/10/5 → 98/10/8

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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@conference{a2371533340a42de802879864cc4f207,

title = "Effects of body reverse pulse bias on geometric component of charge pumping current in FD SOI MOSFETs",

abstract = "The effects of the body reverse pulse bias on the geometric component of charge pumping current (Icp) in fully depleted (FD) silicon on insulator (SOI) MOSFETs were examined. MOSFETs fabricated on separation by implantation of oxygen (SIMOX) wafers with n+poly gate were used for the study. The reversed pulse method was found to be better than the DC reverse method in that it does not cause an undesirable shortening effect of the channel length. The measured CP current is therefore more precise, and consequently a more accurate interface state density can be obtained.",

author = "Duyet, {Tran Ngoc} and Hiroki Ishikuro and Makoto Takamiya and Takuya Saraya and Toshiro Hiramoto",

year = "1998",

month = dec,

day = "1",

language = "English",

pages = "79--80",

note = "Proceedings of the 1998 IEEE International SOI Conference ; Conference date: 05-10-1998 Through 08-10-1998",

}

TY - CONF

T1 - Effects of body reverse pulse bias on geometric component of charge pumping current in FD SOI MOSFETs

AU - Duyet, Tran Ngoc

AU - Ishikuro, Hiroki

AU - Takamiya, Makoto

AU - Saraya, Takuya

AU - Hiramoto, Toshiro

PY - 1998/12/1

Y1 - 1998/12/1

N2 - The effects of the body reverse pulse bias on the geometric component of charge pumping current (Icp) in fully depleted (FD) silicon on insulator (SOI) MOSFETs were examined. MOSFETs fabricated on separation by implantation of oxygen (SIMOX) wafers with n+poly gate were used for the study. The reversed pulse method was found to be better than the DC reverse method in that it does not cause an undesirable shortening effect of the channel length. The measured CP current is therefore more precise, and consequently a more accurate interface state density can be obtained.

AB - The effects of the body reverse pulse bias on the geometric component of charge pumping current (Icp) in fully depleted (FD) silicon on insulator (SOI) MOSFETs were examined. MOSFETs fabricated on separation by implantation of oxygen (SIMOX) wafers with n+poly gate were used for the study. The reversed pulse method was found to be better than the DC reverse method in that it does not cause an undesirable shortening effect of the channel length. The measured CP current is therefore more precise, and consequently a more accurate interface state density can be obtained.

UR - http://www.scopus.com/inward/record.url?scp=0032313687&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032313687&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0032313687

SP - 79

EP - 80

T2 - Proceedings of the 1998 IEEE International SOI Conference

Y2 - 5 October 1998 through 8 October 1998

ER -