Abstract
Silicon carbide ceramics fabricated by three different methods were neutron-irradiated in the Japan Materials Testing Reactor and were subsequently annealed free from stresses or under compressive external stresses. The macroscopic length monotonically decreased with annealing above the irradiation temperature, when annealing was performed below approx.1300°C. This decrease was not affected by the external stresses. However, annealing above approx.1300°C led to an increase in length in B-containing SiC. The expansion was caused by the formation and growth of He bubbles at grain boundaries. The growth occurred by flow of vacancies into bubbles. The compressive stress retarded the expansion along the loading direction. This retardation was compensated by a length increase along the lateral direction. The effect of external stresses was discussed by considering differently oriented He bubbles. One bubble was stress favored and the other stress unfavored. The stress determined the diffusional flow of vacancy-He atom complexes between the favored and unfavored bubbles which were caused by anisotropic expansion under a directional stress.
| Original language | English |
|---|---|
| Pages (from-to) | 2435-2440 |
| Number of pages | 6 |
| Journal | Journal of the American Ceramic Society |
| Volume | 73 |
| Issue number | 8 |
| Publication status | Published - 1990 Aug |
| Externally published | Yes |
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ASJC Scopus subject areas
- Engineering(all)
- Ceramics and Composites
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Effects of external stress on defect annihilation and bubble swelling during annealing of neutron-irradiated silicon carbide. / Suzuki, Tetsuya; Yano, Toyohiko; Iseki, Takayoshi; Mori, Tsutomu.
In: Journal of the American Ceramic Society, Vol. 73, No. 8, 08.1990, p. 2435-2440.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effects of external stress on defect annihilation and bubble swelling during annealing of neutron-irradiated silicon carbide
AU - Suzuki, Tetsuya
AU - Yano, Toyohiko
AU - Iseki, Takayoshi
AU - Mori, Tsutomu
PY - 1990/8
Y1 - 1990/8
N2 - Silicon carbide ceramics fabricated by three different methods were neutron-irradiated in the Japan Materials Testing Reactor and were subsequently annealed free from stresses or under compressive external stresses. The macroscopic length monotonically decreased with annealing above the irradiation temperature, when annealing was performed below approx.1300°C. This decrease was not affected by the external stresses. However, annealing above approx.1300°C led to an increase in length in B-containing SiC. The expansion was caused by the formation and growth of He bubbles at grain boundaries. The growth occurred by flow of vacancies into bubbles. The compressive stress retarded the expansion along the loading direction. This retardation was compensated by a length increase along the lateral direction. The effect of external stresses was discussed by considering differently oriented He bubbles. One bubble was stress favored and the other stress unfavored. The stress determined the diffusional flow of vacancy-He atom complexes between the favored and unfavored bubbles which were caused by anisotropic expansion under a directional stress.
AB - Silicon carbide ceramics fabricated by three different methods were neutron-irradiated in the Japan Materials Testing Reactor and were subsequently annealed free from stresses or under compressive external stresses. The macroscopic length monotonically decreased with annealing above the irradiation temperature, when annealing was performed below approx.1300°C. This decrease was not affected by the external stresses. However, annealing above approx.1300°C led to an increase in length in B-containing SiC. The expansion was caused by the formation and growth of He bubbles at grain boundaries. The growth occurred by flow of vacancies into bubbles. The compressive stress retarded the expansion along the loading direction. This retardation was compensated by a length increase along the lateral direction. The effect of external stresses was discussed by considering differently oriented He bubbles. One bubble was stress favored and the other stress unfavored. The stress determined the diffusional flow of vacancy-He atom complexes between the favored and unfavored bubbles which were caused by anisotropic expansion under a directional stress.
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M3 - Article
AN - SCOPUS:0025478075
VL - 73
SP - 2435
EP - 2440
JO - Journal of the American Ceramic Society
JF - Journal of the American Ceramic Society
SN - 0002-7820
IS - 8
ER -