Effects of hyperthermal carbon subimplantation doping on the Raman spectra of GaAs

P. Fons, Yunosuke Makita, Shinji Kimura, Tsutomu Iida, Akimasa Yamada, Hajime Shibata, Akira Obara, Yushin Tsai, Shin Ichiro Uekusa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The structural effects of low-energy (30-500 eV), mass separated C12 Ion doping of GaAs simultaneous with conventional solid source MBE growth have been studied using room-temperature raman scattering, Hall-effect, transmission electron microscopy and 2 K photoluminesence measurements for GaAs epitaxy temperatures of 550°C. Results indicate good acceptor activation without detectable residual damage is achieved for ion energies ≤ 240 eV, while at EIon = 500 eV, residual damage is present with a corresponding reduction in electrical activation. Low-energy TRIM calculations indicate that the damage is related to the increased depth distribution of vacancies and interstitials created during the higher (500 eV) implantation process which can not be annealed out at growth temperatures. Constant energy (100 eV) film growth experiments for a range of implantation currents (45 pA/cm2 - 45 nA/cm2) and growth temperatures of 550 and 550 °C, show LO Raman peak broadening and mode hardening for currents ≥ 15 nA while maintaining very high C acceptor activation. This is interpreted as residual stress due to small amounts of interstitial C in the highest doped films. Both Hall mobility measurements and photoluminesence show no evidence of C dopant compensation.

Original languageEnglish
Title of host publicationMaterials Synthesis and Processing Using Ion Beams
EditorsAnthony F. Garito, Alex K-Y. Jen, Charles Y-C. Lee, Larry R. Dalton
PublisherPubl by Materials Research Society
Pages1011-1016
Number of pages6
ISBN (Print)1558992154
Publication statusPublished - 1994 Jan 1
Externally publishedYes
EventProceedings of the MRS 1993 Fall Meeting - Boston, MA, USA
Duration: 1993 Nov 291993 Dec 3

Publication series

NameMaterials Research Society Symposium Proceedings
Volume316
ISSN (Print)0272-9172

Conference

ConferenceProceedings of the MRS 1993 Fall Meeting
CityBoston, MA, USA
Period93/11/2993/12/3

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Fons, P., Makita, Y., Kimura, S., Iida, T., Yamada, A., Shibata, H., Obara, A., Tsai, Y., & Uekusa, S. I. (1994). Effects of hyperthermal carbon subimplantation doping on the Raman spectra of GaAs. In A. F. Garito, A. K-Y. Jen, C. Y-C. Lee, & L. R. Dalton (Eds.), Materials Synthesis and Processing Using Ion Beams (pp. 1011-1016). (Materials Research Society Symposium Proceedings; Vol. 316). Publ by Materials Research Society.