Effects of interface traps in silicon-quantum-dots-based memory structures

Yuan Xiaoli, Shi Yi, Gu Shulin, Zhu Jianmin, Zheng Youdou, Saito Kenichi, Hiroki Ishikuro, Hiramoto Toshiro

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Effects of interface traps in silicon-quantum-dots(Si-QDs) based memory structures have been investigated using capacitance-voltage measurement. The observations demonstrate that both the interface traps at Si-QDs and the interface states at SiO2/Si-substrate have strong influences on the charge storage characteristics. The observed long-term charge retention behavior is analyzed in terms of direct charge-tunneling from deep trapping centers at Si-QDs to the interface states at SiO2/Si-substrate, considering three-dimensional quantum confinement and Coulomb charging effects.

Original languageEnglish
Pages (from-to)189-193
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume8
Issue number2
DOIs
Publication statusPublished - 2000 Aug
Externally publishedYes

Fingerprint

Silicon
Semiconductor quantum dots
Interfaces (computer)
Interface states
quantum dots
traps
Data storage equipment
silicon
Quantum confinement
Capacitance measurement
Voltage measurement
Substrates
electrical measurement
charging
capacitance
trapping

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Effects of interface traps in silicon-quantum-dots-based memory structures. / Xiaoli, Yuan; Yi, Shi; Shulin, Gu; Jianmin, Zhu; Youdou, Zheng; Kenichi, Saito; Ishikuro, Hiroki; Toshiro, Hiramoto.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 8, No. 2, 08.2000, p. 189-193.

Research output: Contribution to journalArticle

Xiaoli, Yuan ; Yi, Shi ; Shulin, Gu ; Jianmin, Zhu ; Youdou, Zheng ; Kenichi, Saito ; Ishikuro, Hiroki ; Toshiro, Hiramoto. / Effects of interface traps in silicon-quantum-dots-based memory structures. In: Physica E: Low-Dimensional Systems and Nanostructures. 2000 ; Vol. 8, No. 2. pp. 189-193.
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