Abstract
Effects of interface traps in silicon-quantum-dots(Si-QDs) based memory structures have been investigated using capacitance-voltage measurement. The observations demonstrate that both the interface traps at Si-QDs and the interface states at SiO2/Si-substrate have strong influences on the charge storage characteristics. The observed long-term charge retention behavior is analyzed in terms of direct charge-tunneling from deep trapping centers at Si-QDs to the interface states at SiO2/Si-substrate, considering three-dimensional quantum confinement and Coulomb charging effects.
| Original language | English |
|---|---|
| Pages (from-to) | 189-193 |
| Number of pages | 5 |
| Journal | Physica E: Low-Dimensional Systems and Nanostructures |
| Volume | 8 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2000 Aug |
| Externally published | Yes |
| Event | IUMRS-ICAM'99: Symposium on Low Dimensional Structures and Quantum Devices: Symposium O of the 5th IUMRS International Conference on Advanced Materials - Beijing, China Duration: 1999 Jun 13 → 1999 Jun 18 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
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Cite this
Xiaoli, Y., Yi, S., Shulin, G., Jianmin, Z., Youdou, Z., Kenichi, S., Hiroki, I., & Toshiro, H. (2000). Effects of interface traps in silicon-quantum-dots-based memory structures. Physica E: Low-Dimensional Systems and Nanostructures, 8(2), 189-193. https://doi.org/10.1016/S1386-9477(00)00138-7