Effects of interface traps in silicon-quantum-dots-based memory structures

Yuan Xiaoli; Shi Yi; Gu Shulin; Zhu Jianmin; Zheng Youdou; Saito Kenichi; Ishikuro Hiroki; Hiramoto Toshiro

doi:10.1016/S1386-9477(00)00138-7

Effects of interface traps in silicon-quantum-dots-based memory structures

Yuan Xiaoli, Shi Yi, Gu Shulin, Zhu Jianmin, Zheng Youdou, Saito Kenichi, Ishikuro Hiroki, Hiramoto Toshiro

Research output: Contribution to journal › Conference article › peer-review

13 Citations (Scopus)

Abstract

Effects of interface traps in silicon-quantum-dots(Si-QDs) based memory structures have been investigated using capacitance-voltage measurement. The observations demonstrate that both the interface traps at Si-QDs and the interface states at SiO₂/Si-substrate have strong influences on the charge storage characteristics. The observed long-term charge retention behavior is analyzed in terms of direct charge-tunneling from deep trapping centers at Si-QDs to the interface states at SiO₂/Si-substrate, considering three-dimensional quantum confinement and Coulomb charging effects.

Original language	English
Pages (from-to)	189-193
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	8
Issue number	2
DOIs	https://doi.org/10.1016/S1386-9477(00)00138-7
Publication status	Published - 2000 Aug
Externally published	Yes
Event	IUMRS-ICAM'99: Symposium on Low Dimensional Structures and Quantum Devices: Symposium O of the 5th IUMRS International Conference on Advanced Materials - Beijing, China Duration: 1999 Jun 13 → 1999 Jun 18

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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title = "Effects of interface traps in silicon-quantum-dots-based memory structures",

abstract = "Effects of interface traps in silicon-quantum-dots(Si-QDs) based memory structures have been investigated using capacitance-voltage measurement. The observations demonstrate that both the interface traps at Si-QDs and the interface states at SiO2/Si-substrate have strong influences on the charge storage characteristics. The observed long-term charge retention behavior is analyzed in terms of direct charge-tunneling from deep trapping centers at Si-QDs to the interface states at SiO2/Si-substrate, considering three-dimensional quantum confinement and Coulomb charging effects.",

author = "Yuan Xiaoli and Shi Yi and Gu Shulin and Zhu Jianmin and Zheng Youdou and Saito Kenichi and Ishikuro Hiroki and Hiramoto Toshiro",

note = "Funding Information: This research was partly supported by the Chinese National Natural Science Foundation, Jiangsu Natural Science Foundation, and a Grant-in-aid for Scientific Research on priority area “Single electron devices and their high-density integration” from the Japanese Ministry of Education, Science, Sports and Culture.; IUMRS-ICAM'99: Symposium on Low Dimensional Structures and Quantum Devices: Symposium O of the 5th IUMRS International Conference on Advanced Materials ; Conference date: 13-06-1999 Through 18-06-1999",

year = "2000",

month = aug,

doi = "10.1016/S1386-9477(00)00138-7",

language = "English",

volume = "8",

pages = "189--193",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier",

number = "2",

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TY - JOUR

T1 - Effects of interface traps in silicon-quantum-dots-based memory structures

AU - Xiaoli, Yuan

AU - Yi, Shi

AU - Shulin, Gu

AU - Jianmin, Zhu

AU - Youdou, Zheng

AU - Kenichi, Saito

AU - Hiroki, Ishikuro

AU - Toshiro, Hiramoto

N1 - Funding Information: This research was partly supported by the Chinese National Natural Science Foundation, Jiangsu Natural Science Foundation, and a Grant-in-aid for Scientific Research on priority area “Single electron devices and their high-density integration” from the Japanese Ministry of Education, Science, Sports and Culture.

PY - 2000/8

Y1 - 2000/8

N2 - Effects of interface traps in silicon-quantum-dots(Si-QDs) based memory structures have been investigated using capacitance-voltage measurement. The observations demonstrate that both the interface traps at Si-QDs and the interface states at SiO2/Si-substrate have strong influences on the charge storage characteristics. The observed long-term charge retention behavior is analyzed in terms of direct charge-tunneling from deep trapping centers at Si-QDs to the interface states at SiO2/Si-substrate, considering three-dimensional quantum confinement and Coulomb charging effects.

AB - Effects of interface traps in silicon-quantum-dots(Si-QDs) based memory structures have been investigated using capacitance-voltage measurement. The observations demonstrate that both the interface traps at Si-QDs and the interface states at SiO2/Si-substrate have strong influences on the charge storage characteristics. The observed long-term charge retention behavior is analyzed in terms of direct charge-tunneling from deep trapping centers at Si-QDs to the interface states at SiO2/Si-substrate, considering three-dimensional quantum confinement and Coulomb charging effects.

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U2 - 10.1016/S1386-9477(00)00138-7

DO - 10.1016/S1386-9477(00)00138-7

M3 - Conference article

AN - SCOPUS:0034248131

VL - 8

SP - 189

EP - 193

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 2

T2 - IUMRS-ICAM'99: Symposium on Low Dimensional Structures and Quantum Devices: Symposium O of the 5th IUMRS International Conference on Advanced Materials

Y2 - 13 June 1999 through 18 June 1999

ER -

Effects of interface traps in silicon-quantum-dots-based memory structures

Abstract

ASJC Scopus subject areas

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