Abstract
Effects of interface traps in silicon-quantum-dots(Si-QDs) based memory structures have been investigated using capacitance-voltage measurement. The observations demonstrate that both the interface traps at Si-QDs and the interface states at SiO2/Si-substrate have strong influences on the charge storage characteristics. The observed long-term charge retention behavior is analyzed in terms of direct charge-tunneling from deep trapping centers at Si-QDs to the interface states at SiO2/Si-substrate, considering three-dimensional quantum confinement and Coulomb charging effects.
| Original language | English |
|---|---|
| Pages (from-to) | 189-193 |
| Number of pages | 5 |
| Journal | Physica E: Low-Dimensional Systems and Nanostructures |
| Volume | 8 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2000 Aug |
| Externally published | Yes |
Fingerprint
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Effects of interface traps in silicon-quantum-dots-based memory structures. / Xiaoli, Yuan; Yi, Shi; Shulin, Gu; Jianmin, Zhu; Youdou, Zheng; Kenichi, Saito; Ishikuro, Hiroki; Toshiro, Hiramoto.
In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 8, No. 2, 08.2000, p. 189-193.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effects of interface traps in silicon-quantum-dots-based memory structures
AU - Xiaoli, Yuan
AU - Yi, Shi
AU - Shulin, Gu
AU - Jianmin, Zhu
AU - Youdou, Zheng
AU - Kenichi, Saito
AU - Ishikuro, Hiroki
AU - Toshiro, Hiramoto
PY - 2000/8
Y1 - 2000/8
N2 - Effects of interface traps in silicon-quantum-dots(Si-QDs) based memory structures have been investigated using capacitance-voltage measurement. The observations demonstrate that both the interface traps at Si-QDs and the interface states at SiO2/Si-substrate have strong influences on the charge storage characteristics. The observed long-term charge retention behavior is analyzed in terms of direct charge-tunneling from deep trapping centers at Si-QDs to the interface states at SiO2/Si-substrate, considering three-dimensional quantum confinement and Coulomb charging effects.
AB - Effects of interface traps in silicon-quantum-dots(Si-QDs) based memory structures have been investigated using capacitance-voltage measurement. The observations demonstrate that both the interface traps at Si-QDs and the interface states at SiO2/Si-substrate have strong influences on the charge storage characteristics. The observed long-term charge retention behavior is analyzed in terms of direct charge-tunneling from deep trapping centers at Si-QDs to the interface states at SiO2/Si-substrate, considering three-dimensional quantum confinement and Coulomb charging effects.
UR - http://www.scopus.com/inward/record.url?scp=0034248131&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0034248131&partnerID=8YFLogxK
U2 - 10.1016/S1386-9477(00)00138-7
DO - 10.1016/S1386-9477(00)00138-7
M3 - Article
AN - SCOPUS:0034248131
VL - 8
SP - 189
EP - 193
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 2
ER -