Effects of Interface Traps on Charge Retention Characteristics in Silicon-Quantum-Dot-Based Metal-Oxide-Semiconductor Diodes

Yi Shi, Kenichi Saito, Hiroki Ishikuro, Toshiro Hiramoto

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

We have demonstrated the effects of interface traps and defects on the charge retention characteristics in silicon-quantum-dot (Si-QDs)-based metal-oxide-semiconductor (MOS) memory structures. MOS diodes with various interface traps and defects introduced by thermal annealing treatment are investigated using a capacitance-voltage (C-V) measurement technique. The model of deep trapping centers including three-dimensional quantum confinement and Coulomb charge effects has been developed to successfully explain the observed long-term charge retention behaviors.

Original languageEnglish
Pages (from-to)425-428
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number1 B
Publication statusPublished - 1999
Externally publishedYes

Fingerprint

Semiconductor diodes
semiconductor diodes
metal oxide semiconductors
Semiconductor quantum dots
quantum dots
traps
Silicon
Defects
Quantum confinement
Capacitance measurement
Voltage measurement
defects
silicon
Metals
electrical measurement
capacitance
trapping
Annealing
Data storage equipment
annealing

Keywords

  • Defect
  • Interface trap
  • MOS memory
  • Silicon quantum dot

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Engineering(all)

Cite this

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abstract = "We have demonstrated the effects of interface traps and defects on the charge retention characteristics in silicon-quantum-dot (Si-QDs)-based metal-oxide-semiconductor (MOS) memory structures. MOS diodes with various interface traps and defects introduced by thermal annealing treatment are investigated using a capacitance-voltage (C-V) measurement technique. The model of deep trapping centers including three-dimensional quantum confinement and Coulomb charge effects has been developed to successfully explain the observed long-term charge retention behaviors.",
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AU - Shi, Yi

AU - Saito, Kenichi

AU - Ishikuro, Hiroki

AU - Hiramoto, Toshiro

PY - 1999

Y1 - 1999

N2 - We have demonstrated the effects of interface traps and defects on the charge retention characteristics in silicon-quantum-dot (Si-QDs)-based metal-oxide-semiconductor (MOS) memory structures. MOS diodes with various interface traps and defects introduced by thermal annealing treatment are investigated using a capacitance-voltage (C-V) measurement technique. The model of deep trapping centers including three-dimensional quantum confinement and Coulomb charge effects has been developed to successfully explain the observed long-term charge retention behaviors.

AB - We have demonstrated the effects of interface traps and defects on the charge retention characteristics in silicon-quantum-dot (Si-QDs)-based metal-oxide-semiconductor (MOS) memory structures. MOS diodes with various interface traps and defects introduced by thermal annealing treatment are investigated using a capacitance-voltage (C-V) measurement technique. The model of deep trapping centers including three-dimensional quantum confinement and Coulomb charge effects has been developed to successfully explain the observed long-term charge retention behaviors.

KW - Defect

KW - Interface trap

KW - MOS memory

KW - Silicon quantum dot

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