Effects of Interface Traps on Charge Retention Characteristics in Silicon-Quantum-Dot-Based Metal-Oxide-Semiconductor Diodes

Yi Shi, Kenichi Saito, Hiroki Ishikuro, Toshiro Hiramoto

Research output: Contribution to journalConference article

37 Citations (Scopus)

Abstract

We have demonstrated the effects of interface traps and defects on the charge retention characteristics in silicon-quantum-dot (Si-QDs)-based metal-oxide-semiconductor (MOS) memory structures. MOS diodes with various interface traps and defects introduced by thermal annealing treatment are investigated using a capacitance-voltage (C-V) measurement technique. The model of deep trapping centers including three-dimensional quantum confinement and Coulomb charge effects has been developed to successfully explain the observed long-term charge retention behaviors.

Original languageEnglish
Pages (from-to)425-428
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number1 B
DOIs
Publication statusPublished - 1999 Jan 1
Externally publishedYes
EventProceedings of the 1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, QDS-98 - Sapporo, Japan
Duration: 1998 May 311998 Jun 4

Keywords

  • Defect
  • Interface trap
  • MOS memory
  • Silicon quantum dot

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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