Effects of Interface Traps on Charge Retention Characteristics in Silicon-Quantum-Dot-Based Metal-Oxide-Semiconductor Diodes

Yi Shi; Kenichi Saito; Hiroki Ishikuro; Toshiro Hiramoto

doi:10.1143/JJAP.38.425

Effects of Interface Traps on Charge Retention Characteristics in Silicon-Quantum-Dot-Based Metal-Oxide-Semiconductor Diodes

Yi Shi, Kenichi Saito, Hiroki Ishikuro, Toshiro Hiramoto

Research output: Contribution to journal › Conference article › peer-review

37 Citations (Scopus)

Abstract

We have demonstrated the effects of interface traps and defects on the charge retention characteristics in silicon-quantum-dot (Si-QDs)-based metal-oxide-semiconductor (MOS) memory structures. MOS diodes with various interface traps and defects introduced by thermal annealing treatment are investigated using a capacitance-voltage (C-V) measurement technique. The model of deep trapping centers including three-dimensional quantum confinement and Coulomb charge effects has been developed to successfully explain the observed long-term charge retention behaviors.

Original language	English
Pages (from-to)	425-428
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	38
Issue number	1 B
DOIs	https://doi.org/10.1143/JJAP.38.425
Publication status	Published - 1999 Jan 1
Externally published	Yes
Event	Proceedings of the 1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, QDS-98 - Sapporo, Japan Duration: 1998 May 31 → 1998 Jun 4

Keywords

Defect
Interface trap
MOS memory
Silicon quantum dot

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Effects of Interface Traps on Charge Retention Characteristics in Silicon-Quantum-Dot-Based Metal-Oxide-Semiconductor Diodes. / Shi, Yi; Saito, Kenichi; Ishikuro, Hiroki; Hiramoto, Toshiro.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 38, No. 1 B, 01.01.1999, p. 425-428.

Research output: Contribution to journal › Conference article › peer-review

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