Effects of isotope disorder on phonons in germanium determined from bound exciton luminescence

Gordon Davies, Joachim Hartung, V. Ozhogin, Kohei M Itoh, W. L. Hansen, E. E. Haller

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The effects of isotope disorder on the energies of the transverse acoustic (TAL), longitudinal acoustic (LAL) and transverse optical (TOL) phonons at the L point have been investigated using the luminescence of excitons bound to copper acceptors. In a sample with approximately equal 70Ge and 76Ge the TOL phonon is 0.14 ± 0.03 meV higher in energy than expected for a crystal of the same mean atomic mass, while the LAL phonon is 0.07 ± 0.03 meV lower in energy; the TOL phonon is also broadened by 0.4 meV. In this disordered sample the Cu no-phonon line is 0.05 ± 0.02 meV higher than expected.

Original languageEnglish
Pages (from-to)127-130
Number of pages4
JournalSemiconductor Science and Technology
Volume8
Issue number1
DOIs
Publication statusPublished - 1993 Jan
Externally publishedYes

Fingerprint

Germanium
Phonons
Excitons
Isotopes
Luminescence
germanium
phonons
isotopes
Acoustics
excitons
disorders
luminescence
acoustics
atomic weights
energy
Copper
copper
Crystals
crystals
LDS 751

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Effects of isotope disorder on phonons in germanium determined from bound exciton luminescence. / Davies, Gordon; Hartung, Joachim; Ozhogin, V.; Itoh, Kohei M; Hansen, W. L.; Haller, E. E.

In: Semiconductor Science and Technology, Vol. 8, No. 1, 01.1993, p. 127-130.

Research output: Contribution to journalArticle

Davies, Gordon ; Hartung, Joachim ; Ozhogin, V. ; Itoh, Kohei M ; Hansen, W. L. ; Haller, E. E. / Effects of isotope disorder on phonons in germanium determined from bound exciton luminescence. In: Semiconductor Science and Technology. 1993 ; Vol. 8, No. 1. pp. 127-130.
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