Effects of KrF laser irradiation on Bi nanoclusters embedded in a-SiO2 by ion implantation

Seung Y. Park; Tetsuhiko Isobe; Mamoru Senna; Robert A. Weeks; Raymond A. Zuhr

doi:10.1063/1.122554

Effects of KrF laser irradiation on Bi nanoclusters embedded in a-SiO₂ by ion implantation

Seung Y. Park, Tetsuhiko Isobe, Mamoru Senna, Robert A. Weeks, Raymond A. Zuhr

Department of Applied Chemistry

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Bismuth nanoclusters have been formed in optical grade silica glass (Corning 7940) by ion implantation which formed localized Bi:SiO₂ composite in the near-surface region. Subsequent irradiation with 248 nm KrF excimer laser light modifies the distribution and chemical states of the implanted bismuth in the composite. Excimer laser irradiation causes not only photochemical reactions in the composite leaving a thin film of bismuth oxide on the surface, but also removal of the precipitated particles by both thermal and nonthermal desorption mechanisms from the surface.

Original language	English
Pages (from-to)	2687-2689
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	18
DOIs	https://doi.org/10.1063/1.122554
Publication status	Published - 1998 Dec 1

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "Bismuth nanoclusters have been formed in optical grade silica glass (Corning 7940) by ion implantation which formed localized Bi:SiO2 composite in the near-surface region. Subsequent irradiation with 248 nm KrF excimer laser light modifies the distribution and chemical states of the implanted bismuth in the composite. Excimer laser irradiation causes not only photochemical reactions in the composite leaving a thin film of bismuth oxide on the surface, but also removal of the precipitated particles by both thermal and nonthermal desorption mechanisms from the surface.",

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AU - Park, Seung Y.

AU - Isobe, Tetsuhiko

AU - Senna, Mamoru

AU - Weeks, Robert A.

AU - Zuhr, Raymond A.

PY - 1998/12/1

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