Effects of KrF laser irradiation on Bi nanoclusters embedded in a-SiO2 by ion implantation

Seung Y. Park, Tetsuhiko Isobe, Mamoru Senna, Robert A. Weeks, Raymond A. Zuhr

Research output: Contribution to journalArticle

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Abstract

Bismuth nanoclusters have been formed in optical grade silica glass (Corning 7940) by ion implantation which formed localized Bi:SiO2 composite in the near-surface region. Subsequent irradiation with 248 nm KrF excimer laser light modifies the distribution and chemical states of the implanted bismuth in the composite. Excimer laser irradiation causes not only photochemical reactions in the composite leaving a thin film of bismuth oxide on the surface, but also removal of the precipitated particles by both thermal and nonthermal desorption mechanisms from the surface.

Original languageEnglish
Pages (from-to)2687-2689
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number18
DOIs
Publication statusPublished - 1998

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nanoclusters
ion implantation
excimer lasers
bismuth
irradiation
composite materials
lasers
bismuth oxides
silica glass
photochemical reactions
grade
desorption
causes
thin films

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Effects of KrF laser irradiation on Bi nanoclusters embedded in a-SiO2 by ion implantation. / Park, Seung Y.; Isobe, Tetsuhiko; Senna, Mamoru; Weeks, Robert A.; Zuhr, Raymond A.

In: Applied Physics Letters, Vol. 73, No. 18, 1998, p. 2687-2689.

Research output: Contribution to journalArticle

Park, Seung Y. ; Isobe, Tetsuhiko ; Senna, Mamoru ; Weeks, Robert A. ; Zuhr, Raymond A. / Effects of KrF laser irradiation on Bi nanoclusters embedded in a-SiO2 by ion implantation. In: Applied Physics Letters. 1998 ; Vol. 73, No. 18. pp. 2687-2689.
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