Abstract
Bismuth nanoclusters have been formed in optical grade silica glass (Corning 7940) by ion implantation which formed localized Bi:SiO2 composite in the near-surface region. Subsequent irradiation with 248 nm KrF excimer laser light modifies the distribution and chemical states of the implanted bismuth in the composite. Excimer laser irradiation causes not only photochemical reactions in the composite leaving a thin film of bismuth oxide on the surface, but also removal of the precipitated particles by both thermal and nonthermal desorption mechanisms from the surface.
| Original language | English |
|---|---|
| Pages (from-to) | 2687-2689 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 73 |
| Issue number | 18 |
| DOIs | |
| Publication status | Published - 1998 Dec 1 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Park, S. Y., Isobe, T., Senna, M., Weeks, R. A., & Zuhr, R. A. (1998). Effects of KrF laser irradiation on Bi nanoclusters embedded in a-SiO2 by ion implantation. Applied Physics Letters, 73(18), 2687-2689. https://doi.org/10.1063/1.122554