Effects of Li and Mg doping on microstructure and properties of sol-gel ZnO thin films

Shinobu Fujihara, Chikako Sasaki, Toshio Kimura

Research output: Contribution to journalArticle

127 Citations (Scopus)

Abstract

Zinc oxide thin films doped with Li and Mg were prepared by the sol-gel method, and effects of doping on microstructure and electrical properties were examined. The doped films exhibited c-axis-orientation after final heating at 500°C for 30 min in flowing oxygen. The ZnO crystallite size increased by doping and the surface of the films became rougher. The current density of the films was reduced by doping probably due to the formation of acceptor levels (Li-doping) and the reduction of oxygen defects (Mg-doping). The film with a nominal composition of Zn0.85Li0.10Mg0.05O showed the lowest current density of 1.7 × 10-6 A cm-2 in the present study.

Original languageEnglish
Pages (from-to)2109-2112
Number of pages4
JournalJournal of the European Ceramic Society
Volume21
Issue number10-11
DOIs
Publication statusPublished - 2001

Fingerprint

Sol-gels
Doping (additives)
Thin films
Microstructure
Current density
Oxygen
Zinc Oxide
Crystallite size
Zinc oxide
Sol-gel process
Oxide films
Electric properties
Heating
Defects
Chemical analysis

Keywords

  • Electrical properties
  • Films
  • Grains growth
  • Sol-gel processes
  • ZnO

ASJC Scopus subject areas

  • Ceramics and Composites

Cite this

Effects of Li and Mg doping on microstructure and properties of sol-gel ZnO thin films. / Fujihara, Shinobu; Sasaki, Chikako; Kimura, Toshio.

In: Journal of the European Ceramic Society, Vol. 21, No. 10-11, 2001, p. 2109-2112.

Research output: Contribution to journalArticle

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