The substrate current under the channel layer in a sub-micron gate self-aligned GaAs FET is shown by Monte Carlo simulation to be the major cause of the short channel effects. By introducing a p-type layer between the channel layer and the substrate, the short channel effects of the FETs having sub-micron gate length are suppressed significantly.
|Title of host publication||Institute of Physics Conference Series|
|Editors||B. de Cremoux|
|Number of pages||6|
|Publication status||Published - 1985 Dec 1|
|Name||Institute of Physics Conference Series|
ASJC Scopus subject areas
- Physics and Astronomy(all)