EFFECTS OF P-TYPE BARRIER LAYER ON CHARACTERISTICS OF SUB-MICRON GATE SELF-ALIGNED GaAs FET.

K. Matsumoto, N. Hashizume, N. Atoda, Yuji Awano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The substrate current under the channel layer in a sub-micron gate self-aligned GaAs FET is shown by Monte Carlo simulation to be the major cause of the short channel effects. By introducing a p-type layer between the channel layer and the substrate, the short channel effects of the FETs having sub-micron gate length are suppressed significantly.

Original languageEnglish
Title of host publicationInstitute of Physics Conference Series
EditorsB. de Cremoux
Pages515-520
Number of pages6
Edition74
Publication statusPublished - 1985
Externally publishedYes

Fingerprint

Field effect transistors
Substrates
Monte Carlo simulation

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Matsumoto, K., Hashizume, N., Atoda, N., & Awano, Y. (1985). EFFECTS OF P-TYPE BARRIER LAYER ON CHARACTERISTICS OF SUB-MICRON GATE SELF-ALIGNED GaAs FET. In B. de Cremoux (Ed.), Institute of Physics Conference Series (74 ed., pp. 515-520)

EFFECTS OF P-TYPE BARRIER LAYER ON CHARACTERISTICS OF SUB-MICRON GATE SELF-ALIGNED GaAs FET. / Matsumoto, K.; Hashizume, N.; Atoda, N.; Awano, Yuji.

Institute of Physics Conference Series. ed. / B. de Cremoux. 74. ed. 1985. p. 515-520.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Matsumoto, K, Hashizume, N, Atoda, N & Awano, Y 1985, EFFECTS OF P-TYPE BARRIER LAYER ON CHARACTERISTICS OF SUB-MICRON GATE SELF-ALIGNED GaAs FET. in B de Cremoux (ed.), Institute of Physics Conference Series. 74 edn, pp. 515-520.
Matsumoto K, Hashizume N, Atoda N, Awano Y. EFFECTS OF P-TYPE BARRIER LAYER ON CHARACTERISTICS OF SUB-MICRON GATE SELF-ALIGNED GaAs FET. In de Cremoux B, editor, Institute of Physics Conference Series. 74 ed. 1985. p. 515-520
Matsumoto, K. ; Hashizume, N. ; Atoda, N. ; Awano, Yuji. / EFFECTS OF P-TYPE BARRIER LAYER ON CHARACTERISTICS OF SUB-MICRON GATE SELF-ALIGNED GaAs FET. Institute of Physics Conference Series. editor / B. de Cremoux. 74. ed. 1985. pp. 515-520
@inproceedings{096326ef5e5f40c3a331cfdf8fc35a05,
title = "EFFECTS OF P-TYPE BARRIER LAYER ON CHARACTERISTICS OF SUB-MICRON GATE SELF-ALIGNED GaAs FET.",
abstract = "The substrate current under the channel layer in a sub-micron gate self-aligned GaAs FET is shown by Monte Carlo simulation to be the major cause of the short channel effects. By introducing a p-type layer between the channel layer and the substrate, the short channel effects of the FETs having sub-micron gate length are suppressed significantly.",
author = "K. Matsumoto and N. Hashizume and N. Atoda and Yuji Awano",
year = "1985",
language = "English",
isbn = "0854981659",
pages = "515--520",
editor = "{de Cremoux}, B.",
booktitle = "Institute of Physics Conference Series",
edition = "74",

}

TY - GEN

T1 - EFFECTS OF P-TYPE BARRIER LAYER ON CHARACTERISTICS OF SUB-MICRON GATE SELF-ALIGNED GaAs FET.

AU - Matsumoto, K.

AU - Hashizume, N.

AU - Atoda, N.

AU - Awano, Yuji

PY - 1985

Y1 - 1985

N2 - The substrate current under the channel layer in a sub-micron gate self-aligned GaAs FET is shown by Monte Carlo simulation to be the major cause of the short channel effects. By introducing a p-type layer between the channel layer and the substrate, the short channel effects of the FETs having sub-micron gate length are suppressed significantly.

AB - The substrate current under the channel layer in a sub-micron gate self-aligned GaAs FET is shown by Monte Carlo simulation to be the major cause of the short channel effects. By introducing a p-type layer between the channel layer and the substrate, the short channel effects of the FETs having sub-micron gate length are suppressed significantly.

UR - http://www.scopus.com/inward/record.url?scp=0022187518&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022187518&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0022187518

SN - 0854981659

SP - 515

EP - 520

BT - Institute of Physics Conference Series

A2 - de Cremoux, B.

ER -