Effects of phonon scattering on discrete-impurity-induced current fluctuation in silicon nanowire transistors

Nobuya Mori, Masashi Uematsu, Gennady Mil'Nikov, Hideki Minari, Kohei M Itoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Effects of phonon scattering on random-dopant-induced current fluctuations are investigated in silicon nanowire transistors. Active dopant distributions obtained through kinetic Monte Carlo simulation are introduced into 10nm-gate-length n-type nanowire transistors, and the current-voltage characteristics are calculated by the non-equilibrium Green's function method. The current fluctuation is found to be suppressed by ∼ 40% by phonon scatterings at the on-state, while it is very weakly affected at the off-state.

Original languageEnglish
Title of host publicationInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Pages119-122
Number of pages4
DOIs
Publication statusPublished - 2013
Event18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013 - Glasgow, United Kingdom
Duration: 2013 Sep 32013 Sep 5

Other

Other18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
CountryUnited Kingdom
CityGlasgow
Period13/9/313/9/5

Fingerprint

Current Fluctuations
Silicon Nanowires
Phonon scattering
Induced currents
Phonon
Impurities
Nanowires
Transistors
Doping (additives)
Scattering
Kinetic Monte Carlo
Silicon
Current voltage characteristics
Green's function
Non-equilibrium
Monte Carlo Simulation
Voltage
Kinetics
Monte Carlo simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

Cite this

Mori, N., Uematsu, M., Mil'Nikov, G., Minari, H., & Itoh, K. M. (2013). Effects of phonon scattering on discrete-impurity-induced current fluctuation in silicon nanowire transistors. In International Conference on Simulation of Semiconductor Processes and Devices, SISPAD (pp. 119-122). [6650589] https://doi.org/10.1109/SISPAD.2013.6650589

Effects of phonon scattering on discrete-impurity-induced current fluctuation in silicon nanowire transistors. / Mori, Nobuya; Uematsu, Masashi; Mil'Nikov, Gennady; Minari, Hideki; Itoh, Kohei M.

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. 2013. p. 119-122 6650589.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mori, N, Uematsu, M, Mil'Nikov, G, Minari, H & Itoh, KM 2013, Effects of phonon scattering on discrete-impurity-induced current fluctuation in silicon nanowire transistors. in International Conference on Simulation of Semiconductor Processes and Devices, SISPAD., 6650589, pp. 119-122, 18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013, Glasgow, United Kingdom, 13/9/3. https://doi.org/10.1109/SISPAD.2013.6650589
Mori N, Uematsu M, Mil'Nikov G, Minari H, Itoh KM. Effects of phonon scattering on discrete-impurity-induced current fluctuation in silicon nanowire transistors. In International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. 2013. p. 119-122. 6650589 https://doi.org/10.1109/SISPAD.2013.6650589
Mori, Nobuya ; Uematsu, Masashi ; Mil'Nikov, Gennady ; Minari, Hideki ; Itoh, Kohei M. / Effects of phonon scattering on discrete-impurity-induced current fluctuation in silicon nanowire transistors. International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. 2013. pp. 119-122
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