Effects of phonon scattering on discrete-impurity-induced current fluctuation in silicon nanowire transistors

Nobuya Mori; Masashi Uematsu; Gennady Mil'Nikov; Hideki Minari; Kohei M. Itoh

doi:10.1109/SISPAD.2013.6650589

Effects of phonon scattering on discrete-impurity-induced current fluctuation in silicon nanowire transistors

Nobuya Mori, Masashi Uematsu, Gennady Mil'Nikov, Hideki Minari, Kohei M. Itoh

Department of Applied Physics and Physico-Informatics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Effects of phonon scattering on random-dopant-induced current fluctuations are investigated in silicon nanowire transistors. Active dopant distributions obtained through kinetic Monte Carlo simulation are introduced into 10nm-gate-length n-type nanowire transistors, and the current-voltage characteristics are calculated by the non-equilibrium Green's function method. The current fluctuation is found to be suppressed by ∼ 40% by phonon scatterings at the on-state, while it is very weakly affected at the off-state.

Original language	English
Title of host publication	2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
Pages	119-122
Number of pages	4
DOIs	https://doi.org/10.1109/SISPAD.2013.6650589
Publication status	Published - 2013
Event	18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013 - Glasgow, United Kingdom Duration: 2013 Sept 3 → 2013 Sept 5

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Other

Other	18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
Country/Territory	United Kingdom
City	Glasgow
Period	13/9/3 → 13/9/5

ASJC Scopus subject areas

Electrical and Electronic Engineering
Computer Science Applications
Modelling and Simulation

Access to Document

10.1109/SISPAD.2013.6650589

Cite this

Mori, N., Uematsu, M., Mil'Nikov, G., Minari, H., & Itoh, K. M. (2013). Effects of phonon scattering on discrete-impurity-induced current fluctuation in silicon nanowire transistors. In 2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013 (pp. 119-122). [6650589] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). https://doi.org/10.1109/SISPAD.2013.6650589

Effects of phonon scattering on discrete-impurity-induced current fluctuation in silicon nanowire transistors. / Mori, Nobuya; Uematsu, Masashi; Mil'Nikov, Gennady et al.

2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013. 2013. p. 119-122 6650589 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Mori, N, Uematsu, M, Mil'Nikov, G, Minari, H & Itoh, KM 2013, Effects of phonon scattering on discrete-impurity-induced current fluctuation in silicon nanowire transistors. in 2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013., 6650589, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, pp. 119-122, 18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013, Glasgow, United Kingdom, 13/9/3. https://doi.org/10.1109/SISPAD.2013.6650589

Mori N, Uematsu M, Mil'Nikov G, Minari H, Itoh KM. Effects of phonon scattering on discrete-impurity-induced current fluctuation in silicon nanowire transistors. In 2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013. 2013. p. 119-122. 6650589. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). doi: 10.1109/SISPAD.2013.6650589

Mori, Nobuya ; Uematsu, Masashi ; Mil'Nikov, Gennady et al. / Effects of phonon scattering on discrete-impurity-induced current fluctuation in silicon nanowire transistors. 2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013. 2013. pp. 119-122 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

@inproceedings{9f20805325b24ef2bd851a248a8b706c,

title = "Effects of phonon scattering on discrete-impurity-induced current fluctuation in silicon nanowire transistors",

abstract = "Effects of phonon scattering on random-dopant-induced current fluctuations are investigated in silicon nanowire transistors. Active dopant distributions obtained through kinetic Monte Carlo simulation are introduced into 10nm-gate-length n-type nanowire transistors, and the current-voltage characteristics are calculated by the non-equilibrium Green's function method. The current fluctuation is found to be suppressed by ∼ 40% by phonon scatterings at the on-state, while it is very weakly affected at the off-state.",

author = "Nobuya Mori and Masashi Uematsu and Gennady Mil'Nikov and Hideki Minari and Itoh, {Kohei M.}",

year = "2013",

doi = "10.1109/SISPAD.2013.6650589",

language = "English",

isbn = "9781467357364",

series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",

pages = "119--122",

booktitle = "2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013",

note = "18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013 ; Conference date: 03-09-2013 Through 05-09-2013",

}

TY - GEN

T1 - Effects of phonon scattering on discrete-impurity-induced current fluctuation in silicon nanowire transistors

AU - Mori, Nobuya

AU - Uematsu, Masashi

AU - Mil'Nikov, Gennady

AU - Minari, Hideki

AU - Itoh, Kohei M.

PY - 2013

Y1 - 2013

N2 - Effects of phonon scattering on random-dopant-induced current fluctuations are investigated in silicon nanowire transistors. Active dopant distributions obtained through kinetic Monte Carlo simulation are introduced into 10nm-gate-length n-type nanowire transistors, and the current-voltage characteristics are calculated by the non-equilibrium Green's function method. The current fluctuation is found to be suppressed by ∼ 40% by phonon scatterings at the on-state, while it is very weakly affected at the off-state.

AB - Effects of phonon scattering on random-dopant-induced current fluctuations are investigated in silicon nanowire transistors. Active dopant distributions obtained through kinetic Monte Carlo simulation are introduced into 10nm-gate-length n-type nanowire transistors, and the current-voltage characteristics are calculated by the non-equilibrium Green's function method. The current fluctuation is found to be suppressed by ∼ 40% by phonon scatterings at the on-state, while it is very weakly affected at the off-state.

UR - http://www.scopus.com/inward/record.url?scp=84891085376&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84891085376&partnerID=8YFLogxK

U2 - 10.1109/SISPAD.2013.6650589

DO - 10.1109/SISPAD.2013.6650589

M3 - Conference contribution

AN - SCOPUS:84891085376

SN - 9781467357364

T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

SP - 119

EP - 122

BT - 2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013

T2 - 18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013

Y2 - 3 September 2013 through 5 September 2013

ER -

Effects of phonon scattering on discrete-impurity-induced current fluctuation in silicon nanowire transistors

Abstract

Publication series

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this