Effects of phonon scattering on discrete-impurity-induced current fluctuation in silicon nanowire transistors

Nobuya Mori, Masashi Uematsu, Gennady Mil'Nikov, Hideki Minari, Kohei M. Itoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Effects of phonon scattering on random-dopant-induced current fluctuations are investigated in silicon nanowire transistors. Active dopant distributions obtained through kinetic Monte Carlo simulation are introduced into 10nm-gate-length n-type nanowire transistors, and the current-voltage characteristics are calculated by the non-equilibrium Green's function method. The current fluctuation is found to be suppressed by ∼ 40% by phonon scatterings at the on-state, while it is very weakly affected at the off-state.

Original languageEnglish
Title of host publication2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
Pages119-122
Number of pages4
DOIs
Publication statusPublished - 2013
Event18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013 - Glasgow, United Kingdom
Duration: 2013 Sep 32013 Sep 5

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Other

Other18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
CountryUnited Kingdom
CityGlasgow
Period13/9/313/9/5

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

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