Effects of polaron formation in semiconductor quantum dots on transport properties

Tomoki Tasai, Mikio Eto

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We theoretically examine the effects of polaron formation in quantum dots on the transport properties. When a separation between two electron-levels in a quantum dot matches the energy of the longitudinal optical (LO) phonons, the polarons are strongly formed. The Rabi splitting between the levels is observable in a peak structure of the differential conductance G as a function of the bias voltage. The polaron formation suppresses the peak height of G, which is due to the competition between the resonant tunneling (resonance between a level in the dot and states in the leads) and the polaron formation (Rabi oscillation between two levels in the dot). G shows a sharp dip at the midpoint between the split peaks. This is attributable to the destructive interference between bonding and anti-bonding states in a composite system of electrons and phonons.

Original languageEnglish
Pages (from-to)1495-1500
Number of pages6
JournalJournal of the Physical Society of Japan
Volume72
Issue number6
DOIs
Publication statusPublished - 2003 Jun

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transport properties
quantum dots
phonons
polarons
resonant tunneling
electrons
interference
oscillations
composite materials
electric potential
energy

Keywords

  • LO phonon
  • Polaron
  • Quantum dot
  • Rabi splitting
  • Resonant tunneling
  • Self-consistent Born approximation

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Effects of polaron formation in semiconductor quantum dots on transport properties. / Tasai, Tomoki; Eto, Mikio.

In: Journal of the Physical Society of Japan, Vol. 72, No. 6, 06.2003, p. 1495-1500.

Research output: Contribution to journalArticle

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