Effects of post-annealing on photoluminescence properties of GaAs quantum dots grown by droplet epitaxy

Katsuyuki Watanabe, Shiro Tsukamoto, Yasutaka Imanaka, Tadashi Takamasu, Giyu Kido, Yoshihiko Gotoh, Nobuyuki Koguchi, Masahiro Yoshita, Shinichi Watanabe, Hidefumi Akiyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated post-annealing effects of self-organized GaAs/AlGaAs quantum dots (QDs) structures grown by droplet epitaxy using a rapid irradiation process of high As flux. Photoluminescence intensity of the QDs increased drastically with increase of post-annealing temperature. Two-dimensional confinement effect of excitons in the plane perpendicular to substrate surface was confirmed by magneto-PL measurements. Additionally, by micro-PL measurements, a broad PL peak of the QDs was resolved to many sharp lines, which might originate in zero-dimensional excitons in three-dimensional confinement potentials. It was confirmed that the droplet epitaxy with the post-annealing process promised the fabrication of high-quality GaAs QD structures.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsR Leon, R Noetzel, S Fafard, D Huffaker
Volume642
Publication statusPublished - 2001
Externally publishedYes
EventSemiconductor Quantum Dots II - Boston, MA, United States
Duration: 2000 Nov 272000 Nov 30

Other

OtherSemiconductor Quantum Dots II
CountryUnited States
CityBoston, MA
Period00/11/2700/11/30

Fingerprint

Epitaxial growth
Semiconductor quantum dots
Photoluminescence
Annealing
Excitons
Irradiation
Fluxes
Fabrication
gallium arsenide
Substrates
Temperature
LDS 751

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Watanabe, K., Tsukamoto, S., Imanaka, Y., Takamasu, T., Kido, G., Gotoh, Y., ... Akiyama, H. (2001). Effects of post-annealing on photoluminescence properties of GaAs quantum dots grown by droplet epitaxy. In R. Leon, R. Noetzel, S. Fafard, & D. Huffaker (Eds.), Materials Research Society Symposium - Proceedings (Vol. 642)

Effects of post-annealing on photoluminescence properties of GaAs quantum dots grown by droplet epitaxy. / Watanabe, Katsuyuki; Tsukamoto, Shiro; Imanaka, Yasutaka; Takamasu, Tadashi; Kido, Giyu; Gotoh, Yoshihiko; Koguchi, Nobuyuki; Yoshita, Masahiro; Watanabe, Shinichi; Akiyama, Hidefumi.

Materials Research Society Symposium - Proceedings. ed. / R Leon; R Noetzel; S Fafard; D Huffaker. Vol. 642 2001.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Watanabe, K, Tsukamoto, S, Imanaka, Y, Takamasu, T, Kido, G, Gotoh, Y, Koguchi, N, Yoshita, M, Watanabe, S & Akiyama, H 2001, Effects of post-annealing on photoluminescence properties of GaAs quantum dots grown by droplet epitaxy. in R Leon, R Noetzel, S Fafard & D Huffaker (eds), Materials Research Society Symposium - Proceedings. vol. 642, Semiconductor Quantum Dots II, Boston, MA, United States, 00/11/27.
Watanabe K, Tsukamoto S, Imanaka Y, Takamasu T, Kido G, Gotoh Y et al. Effects of post-annealing on photoluminescence properties of GaAs quantum dots grown by droplet epitaxy. In Leon R, Noetzel R, Fafard S, Huffaker D, editors, Materials Research Society Symposium - Proceedings. Vol. 642. 2001
Watanabe, Katsuyuki ; Tsukamoto, Shiro ; Imanaka, Yasutaka ; Takamasu, Tadashi ; Kido, Giyu ; Gotoh, Yoshihiko ; Koguchi, Nobuyuki ; Yoshita, Masahiro ; Watanabe, Shinichi ; Akiyama, Hidefumi. / Effects of post-annealing on photoluminescence properties of GaAs quantum dots grown by droplet epitaxy. Materials Research Society Symposium - Proceedings. editor / R Leon ; R Noetzel ; S Fafard ; D Huffaker. Vol. 642 2001.
@inproceedings{583bb2984b68400799bd1a5a23b9340d,
title = "Effects of post-annealing on photoluminescence properties of GaAs quantum dots grown by droplet epitaxy",
abstract = "We investigated post-annealing effects of self-organized GaAs/AlGaAs quantum dots (QDs) structures grown by droplet epitaxy using a rapid irradiation process of high As flux. Photoluminescence intensity of the QDs increased drastically with increase of post-annealing temperature. Two-dimensional confinement effect of excitons in the plane perpendicular to substrate surface was confirmed by magneto-PL measurements. Additionally, by micro-PL measurements, a broad PL peak of the QDs was resolved to many sharp lines, which might originate in zero-dimensional excitons in three-dimensional confinement potentials. It was confirmed that the droplet epitaxy with the post-annealing process promised the fabrication of high-quality GaAs QD structures.",
author = "Katsuyuki Watanabe and Shiro Tsukamoto and Yasutaka Imanaka and Tadashi Takamasu and Giyu Kido and Yoshihiko Gotoh and Nobuyuki Koguchi and Masahiro Yoshita and Shinichi Watanabe and Hidefumi Akiyama",
year = "2001",
language = "English",
volume = "642",
editor = "R Leon and R Noetzel and S Fafard and D Huffaker",
booktitle = "Materials Research Society Symposium - Proceedings",

}

TY - GEN

T1 - Effects of post-annealing on photoluminescence properties of GaAs quantum dots grown by droplet epitaxy

AU - Watanabe, Katsuyuki

AU - Tsukamoto, Shiro

AU - Imanaka, Yasutaka

AU - Takamasu, Tadashi

AU - Kido, Giyu

AU - Gotoh, Yoshihiko

AU - Koguchi, Nobuyuki

AU - Yoshita, Masahiro

AU - Watanabe, Shinichi

AU - Akiyama, Hidefumi

PY - 2001

Y1 - 2001

N2 - We investigated post-annealing effects of self-organized GaAs/AlGaAs quantum dots (QDs) structures grown by droplet epitaxy using a rapid irradiation process of high As flux. Photoluminescence intensity of the QDs increased drastically with increase of post-annealing temperature. Two-dimensional confinement effect of excitons in the plane perpendicular to substrate surface was confirmed by magneto-PL measurements. Additionally, by micro-PL measurements, a broad PL peak of the QDs was resolved to many sharp lines, which might originate in zero-dimensional excitons in three-dimensional confinement potentials. It was confirmed that the droplet epitaxy with the post-annealing process promised the fabrication of high-quality GaAs QD structures.

AB - We investigated post-annealing effects of self-organized GaAs/AlGaAs quantum dots (QDs) structures grown by droplet epitaxy using a rapid irradiation process of high As flux. Photoluminescence intensity of the QDs increased drastically with increase of post-annealing temperature. Two-dimensional confinement effect of excitons in the plane perpendicular to substrate surface was confirmed by magneto-PL measurements. Additionally, by micro-PL measurements, a broad PL peak of the QDs was resolved to many sharp lines, which might originate in zero-dimensional excitons in three-dimensional confinement potentials. It was confirmed that the droplet epitaxy with the post-annealing process promised the fabrication of high-quality GaAs QD structures.

UR - http://www.scopus.com/inward/record.url?scp=0035557673&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035557673&partnerID=8YFLogxK

M3 - Conference contribution

VL - 642

BT - Materials Research Society Symposium - Proceedings

A2 - Leon, R

A2 - Noetzel, R

A2 - Fafard, S

A2 - Huffaker, D

ER -