Effects of post-annealing on photoluminescence properties of GaAs quantum dots grown by droplet epitaxy

Katsuyuki Watanabe; Shiro Tsukamoto; Yasutaka Imanaka; Tadashi Takamasu; Giyu Kido; Yoshihiko Gotoh; Nobuyuki Koguchi; Masahiro Yoshita; Shinichi Watanabe; Hidefumi Akiyama

Effects of post-annealing on photoluminescence properties of GaAs quantum dots grown by droplet epitaxy

Katsuyuki Watanabe, Shiro Tsukamoto, Yasutaka Imanaka, Tadashi Takamasu, Giyu Kido, Yoshihiko Gotoh, Nobuyuki Koguchi, Masahiro Yoshita, Shinichi Watanabe, Hidefumi Akiyama

Research output: Contribution to journal › Conference article › peer-review

Abstract

We investigated post-annealing effects of self-organized GaAs/AlGaAs quantum dots (QDs) structures grown by droplet epitaxy using a rapid irradiation process of high As flux. Photoluminescence intensity of the QDs increased drastically with increase of post-annealing temperature. Two-dimensional confinement effect of excitons in the plane perpendicular to substrate surface was confirmed by magneto-PL measurements. Additionally, by micro-PL measurements, a broad PL peak of the QDs was resolved to many sharp lines, which might originate in zero-dimensional excitons in three-dimensional confinement potentials. It was confirmed that the droplet epitaxy with the post-annealing process promised the fabrication of high-quality GaAs QD structures.

Original language	English
Pages (from-to)	J9.5.1-J9.5.6
Journal	Materials Research Society Symposium - Proceedings
Volume	642
Publication status	Published - 2001
Externally published	Yes
Event	Semiconductor Quantum Dots II - Boston, MA, United States Duration: 2000 Nov 27 → 2000 Nov 30

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Effects of post-annealing on photoluminescence properties of GaAs quantum dots grown by droplet epitaxy",

abstract = "We investigated post-annealing effects of self-organized GaAs/AlGaAs quantum dots (QDs) structures grown by droplet epitaxy using a rapid irradiation process of high As flux. Photoluminescence intensity of the QDs increased drastically with increase of post-annealing temperature. Two-dimensional confinement effect of excitons in the plane perpendicular to substrate surface was confirmed by magneto-PL measurements. Additionally, by micro-PL measurements, a broad PL peak of the QDs was resolved to many sharp lines, which might originate in zero-dimensional excitons in three-dimensional confinement potentials. It was confirmed that the droplet epitaxy with the post-annealing process promised the fabrication of high-quality GaAs QD structures.",

author = "Katsuyuki Watanabe and Shiro Tsukamoto and Yasutaka Imanaka and Tadashi Takamasu and Giyu Kido and Yoshihiko Gotoh and Nobuyuki Koguchi and Masahiro Yoshita and Shinichi Watanabe and Hidefumi Akiyama",

year = "2001",

language = "English",

volume = "642",

pages = "J9.5.1--J9.5.6",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Semiconductor Quantum Dots II ; Conference date: 27-11-2000 Through 30-11-2000",

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TY - JOUR

T1 - Effects of post-annealing on photoluminescence properties of GaAs quantum dots grown by droplet epitaxy

AU - Watanabe, Katsuyuki

AU - Tsukamoto, Shiro

AU - Imanaka, Yasutaka

AU - Takamasu, Tadashi

AU - Kido, Giyu

AU - Gotoh, Yoshihiko

AU - Koguchi, Nobuyuki

AU - Yoshita, Masahiro

AU - Watanabe, Shinichi

AU - Akiyama, Hidefumi

PY - 2001

Y1 - 2001

N2 - We investigated post-annealing effects of self-organized GaAs/AlGaAs quantum dots (QDs) structures grown by droplet epitaxy using a rapid irradiation process of high As flux. Photoluminescence intensity of the QDs increased drastically with increase of post-annealing temperature. Two-dimensional confinement effect of excitons in the plane perpendicular to substrate surface was confirmed by magneto-PL measurements. Additionally, by micro-PL measurements, a broad PL peak of the QDs was resolved to many sharp lines, which might originate in zero-dimensional excitons in three-dimensional confinement potentials. It was confirmed that the droplet epitaxy with the post-annealing process promised the fabrication of high-quality GaAs QD structures.

AB - We investigated post-annealing effects of self-organized GaAs/AlGaAs quantum dots (QDs) structures grown by droplet epitaxy using a rapid irradiation process of high As flux. Photoluminescence intensity of the QDs increased drastically with increase of post-annealing temperature. Two-dimensional confinement effect of excitons in the plane perpendicular to substrate surface was confirmed by magneto-PL measurements. Additionally, by micro-PL measurements, a broad PL peak of the QDs was resolved to many sharp lines, which might originate in zero-dimensional excitons in three-dimensional confinement potentials. It was confirmed that the droplet epitaxy with the post-annealing process promised the fabrication of high-quality GaAs QD structures.

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M3 - Conference article

AN - SCOPUS:0035557673

SN - 0272-9172

VL - 642

SP - J9.5.1-J9.5.6

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Semiconductor Quantum Dots II

Y2 - 27 November 2000 through 30 November 2000

ER -

Effects of post-annealing on photoluminescence properties of GaAs quantum dots grown by droplet epitaxy

Abstract

ASJC Scopus subject areas

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