Effects of post-annealing on photoluminescence properties of GaAs quantum dots grown by droplet epitaxy

Katsuyuki Watanabe, Shiro Tsukamoto, Yasutaka Imanaka, Tadashi Takamasu, Giyu Kido, Yoshihiko Gotoh, Nobuyuki Koguchi, Masahiro Yoshita, Shinichi Watanabe, Hidefumi Akiyama

Research output: Contribution to journalConference articlepeer-review

Abstract

We investigated post-annealing effects of self-organized GaAs/AlGaAs quantum dots (QDs) structures grown by droplet epitaxy using a rapid irradiation process of high As flux. Photoluminescence intensity of the QDs increased drastically with increase of post-annealing temperature. Two-dimensional confinement effect of excitons in the plane perpendicular to substrate surface was confirmed by magneto-PL measurements. Additionally, by micro-PL measurements, a broad PL peak of the QDs was resolved to many sharp lines, which might originate in zero-dimensional excitons in three-dimensional confinement potentials. It was confirmed that the droplet epitaxy with the post-annealing process promised the fabrication of high-quality GaAs QD structures.

Original languageEnglish
Pages (from-to)J9.5.1-J9.5.6
JournalMaterials Research Society Symposium - Proceedings
Volume642
Publication statusPublished - 2001 Dec 1
Externally publishedYes
EventSemiconductor Quantum Dots II - Boston, MA, United States
Duration: 2000 Nov 272000 Nov 30

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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