Effects of RbF postdeposition treatment and heat-light soaking on the metastable acceptor activation of CuInSe2 thin film photovoltaic devices

Shogo Ishizuka, Hajime Shibata, Jiro Nishinaga, Yukiko Kamikawa, Paul J. Fons

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Granular particles formed on a CuInSe2 (CIS) thin film surface with alkali-halide RbF post-deposition treatment (RbF-PDT) are found to concentrate preferably on other than smooth (112)-planes present on the CIS film surface. As a consequence, a large number of distinctive pores are selectively formed at relatively rough facets. Although the open circuit voltage and fill factor values of CIS solar cells improve with either RbF-PDT or heat-light soaking (HLS) treatment, the effects of these treatments are distinguishable. The ratio of carrier recombination rates at the interface (Ri) to that in the bulk (Rb), namely, Ri/Rb, decreases with RbF-PDT. HLS treatment performed on RbF-PDT CIS devices leads to a further decrease in the value of Ri/Rb, whereas the value of Ri/Rb of CIS devices fabricated without RbF-PDT increases with HLS treatment. Ternary CIS solar cells grown with RbF-PDT and HLS treatment reproducibly demonstrate enhanced photovoltaic efficiencies.

Original languageEnglish
Article number063901
JournalApplied Physics Letters
Volume113
Issue number6
DOIs
Publication statusPublished - 2018 Aug 6
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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