Effects of the Cu off-stoichiometry on transport properties of wide gap p -type semiconductor, layered oxysulfide LaCuSO

Yosuke Goto, Mai Tanaki, Yuki Okusa, Taizo Shibuya, Kenji Yasuoka, Masanori Matoba, Yoichi Kamihara

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Layered oxysulfide LaCu1-xSO (x = 0-0.03) was prepared to elucidate the effect of Cu off-stoichiometry on their electrical and thermal transport properties. Electrical resistivity drastically decreases down from ∼105 Ω·cm to ∼10-1 Ω·cm as a result of Cu deficiency (x = 0.01) at 300 K. Thermal conductivity of the samples at 300 K, which is dominated by lattice components, is estimated to be 2.3(3) Wm-1K-1. Stoichiometric LaCuSO has an optical band gap of 3.1 eV, while broad optical absorption at photon energies of approximately 2.1 eV was observed for Cu-deficient samples. Density functional theory calculation suggests that these broad absorption structures probably originate from the in-gap states generated by the sulfur vacancies created to compensate the charge imbalance due to Cu off-stoichiometry. These results clearly demonstrate that Cu deficiency plays a crucial role in determining the electrical transport properties of Cu-based p-type transparent semiconductors.

Original languageEnglish
Article number022104
JournalApplied Physics Letters
Volume105
Issue number2
DOIs
Publication statusPublished - 2014

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p-type semiconductors
stoichiometry
transport properties
optical absorption
sulfur
thermal conductivity
density functional theory
electrical resistivity
photons
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Effects of the Cu off-stoichiometry on transport properties of wide gap p -type semiconductor, layered oxysulfide LaCuSO. / Goto, Yosuke; Tanaki, Mai; Okusa, Yuki; Shibuya, Taizo; Yasuoka, Kenji; Matoba, Masanori; Kamihara, Yoichi.

In: Applied Physics Letters, Vol. 105, No. 2, 022104, 2014.

Research output: Contribution to journalArticle

@article{d410d228a6bb4c33909caa51e3bda467,
title = "Effects of the Cu off-stoichiometry on transport properties of wide gap p -type semiconductor, layered oxysulfide LaCuSO",
abstract = "Layered oxysulfide LaCu1-xSO (x = 0-0.03) was prepared to elucidate the effect of Cu off-stoichiometry on their electrical and thermal transport properties. Electrical resistivity drastically decreases down from ∼105 Ω·cm to ∼10-1 Ω·cm as a result of Cu deficiency (x = 0.01) at 300 K. Thermal conductivity of the samples at 300 K, which is dominated by lattice components, is estimated to be 2.3(3) Wm-1K-1. Stoichiometric LaCuSO has an optical band gap of 3.1 eV, while broad optical absorption at photon energies of approximately 2.1 eV was observed for Cu-deficient samples. Density functional theory calculation suggests that these broad absorption structures probably originate from the in-gap states generated by the sulfur vacancies created to compensate the charge imbalance due to Cu off-stoichiometry. These results clearly demonstrate that Cu deficiency plays a crucial role in determining the electrical transport properties of Cu-based p-type transparent semiconductors.",
author = "Yosuke Goto and Mai Tanaki and Yuki Okusa and Taizo Shibuya and Kenji Yasuoka and Masanori Matoba and Yoichi Kamihara",
year = "2014",
doi = "10.1063/1.4890302",
language = "English",
volume = "105",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

TY - JOUR

T1 - Effects of the Cu off-stoichiometry on transport properties of wide gap p -type semiconductor, layered oxysulfide LaCuSO

AU - Goto, Yosuke

AU - Tanaki, Mai

AU - Okusa, Yuki

AU - Shibuya, Taizo

AU - Yasuoka, Kenji

AU - Matoba, Masanori

AU - Kamihara, Yoichi

PY - 2014

Y1 - 2014

N2 - Layered oxysulfide LaCu1-xSO (x = 0-0.03) was prepared to elucidate the effect of Cu off-stoichiometry on their electrical and thermal transport properties. Electrical resistivity drastically decreases down from ∼105 Ω·cm to ∼10-1 Ω·cm as a result of Cu deficiency (x = 0.01) at 300 K. Thermal conductivity of the samples at 300 K, which is dominated by lattice components, is estimated to be 2.3(3) Wm-1K-1. Stoichiometric LaCuSO has an optical band gap of 3.1 eV, while broad optical absorption at photon energies of approximately 2.1 eV was observed for Cu-deficient samples. Density functional theory calculation suggests that these broad absorption structures probably originate from the in-gap states generated by the sulfur vacancies created to compensate the charge imbalance due to Cu off-stoichiometry. These results clearly demonstrate that Cu deficiency plays a crucial role in determining the electrical transport properties of Cu-based p-type transparent semiconductors.

AB - Layered oxysulfide LaCu1-xSO (x = 0-0.03) was prepared to elucidate the effect of Cu off-stoichiometry on their electrical and thermal transport properties. Electrical resistivity drastically decreases down from ∼105 Ω·cm to ∼10-1 Ω·cm as a result of Cu deficiency (x = 0.01) at 300 K. Thermal conductivity of the samples at 300 K, which is dominated by lattice components, is estimated to be 2.3(3) Wm-1K-1. Stoichiometric LaCuSO has an optical band gap of 3.1 eV, while broad optical absorption at photon energies of approximately 2.1 eV was observed for Cu-deficient samples. Density functional theory calculation suggests that these broad absorption structures probably originate from the in-gap states generated by the sulfur vacancies created to compensate the charge imbalance due to Cu off-stoichiometry. These results clearly demonstrate that Cu deficiency plays a crucial role in determining the electrical transport properties of Cu-based p-type transparent semiconductors.

UR - http://www.scopus.com/inward/record.url?scp=84904735578&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84904735578&partnerID=8YFLogxK

U2 - 10.1063/1.4890302

DO - 10.1063/1.4890302

M3 - Article

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 2

M1 - 022104

ER -