Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystals

Yi Shi, Kenichi Saito, Hiroki Ishikuro, Toshiro Hiramoto

Research output: Contribution to journalArticle

295 Citations (Scopus)

Abstract

Charge storage characteristics have been investigated in metal-oxide-semiconductor memory structures based on silicon nanocrystals, where various interface traps and defects were introduced by thermal annealing treatment. The observations demonstrate that traps have strong influence on the charge storage behavior, in which the traps and defects at the internal/surface of silicon nanocrystals and the interface states at the SiO2 /Si substrate play different roles, respectively. It is suggested that the injected charges are mainly stored at the deep traps of nanocrystals instead of the conduction band in long-term retention mode. The long-term charge-loss process is dominantly determined by the direct tunneling of the trapped charges to the interface states in the present experiment. An optimum way to improve the retention time would be to introduce a certain number of deep trapping centers in nanocrystals and to decrease the interface states at SiO2/Si substrate.

Original languageEnglish
Pages (from-to)2358-2360
Number of pages3
JournalJournal of Applied Physics
Volume84
Issue number4
Publication statusPublished - 1998 Aug 15
Externally publishedYes

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metal oxide semiconductors
nanocrystals
traps
silicon
defects
conduction bands
trapping
annealing

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystals. / Shi, Yi; Saito, Kenichi; Ishikuro, Hiroki; Hiramoto, Toshiro.

In: Journal of Applied Physics, Vol. 84, No. 4, 15.08.1998, p. 2358-2360.

Research output: Contribution to journalArticle

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