Electric field broadening of arsenic donor states in strongly compensated n-type Ge: (As, Ga)

Jiro Kato, Kohei M Itoh, Eugene E. Haller

Research output: Contribution to journalArticle

Abstract

We discuss on the broadening of ground-state to bound excited-state transitions of shallow donors in strongly compensated n-type Ge in the presence of electric fields and their gradients arising from randomly distributed ionized impurities. Low-temperature (T = 3.2 K) far-infrared absorption spectra of strongly compensated n-type Ge:(As,Ga) have been obtained for samples having ionized impurity concentration NI = 2.2 × 1013-2.6 × 1014 cm-3. Absorption peaks corresponding to 1s-2p± transition of arsenic impurities are observed, and broadened linearly with the ionized impurity concentration due to interactions between electrons and the quadrupole moments of ionized donors. The slope of the peak line width plotted against NI changes at NI ≈ 8 × 1013 cm-3 due to the transition of ionized impurity distribution from random (NI < 8 × 1013 cm-3) to correlated (NI 8 × 1013 cm-3).

Original languageEnglish
Pages (from-to)1-6
Number of pages6
JournalPhysica B: Condensed Matter
Volume302-303
DOIs
Publication statusPublished - 2001

Fingerprint

Arsenic
arsenic
Electric fields
Impurities
impurities
electric fields
Infrared absorption
Electron transitions
Excited states
Linewidth
Ground state
infrared absorption
Absorption spectra
infrared spectra
quadrupoles
slopes
absorption spectra
moments
gradients
ground state

Keywords

  • Compensated semiconductors
  • Impurity absorption
  • Impurity distribution

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Electric field broadening of arsenic donor states in strongly compensated n-type Ge : (As, Ga). / Kato, Jiro; Itoh, Kohei M; Haller, Eugene E.

In: Physica B: Condensed Matter, Vol. 302-303, 2001, p. 1-6.

Research output: Contribution to journalArticle

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N2 - We discuss on the broadening of ground-state to bound excited-state transitions of shallow donors in strongly compensated n-type Ge in the presence of electric fields and their gradients arising from randomly distributed ionized impurities. Low-temperature (T = 3.2 K) far-infrared absorption spectra of strongly compensated n-type Ge:(As,Ga) have been obtained for samples having ionized impurity concentration NI = 2.2 × 1013-2.6 × 1014 cm-3. Absorption peaks corresponding to 1s-2p± transition of arsenic impurities are observed, and broadened linearly with the ionized impurity concentration due to interactions between electrons and the quadrupole moments of ionized donors. The slope of the peak line width plotted against NI changes at NI ≈ 8 × 1013 cm-3 due to the transition of ionized impurity distribution from random (NI < 8 × 1013 cm-3) to correlated (NI 8 × 1013 cm-3).

AB - We discuss on the broadening of ground-state to bound excited-state transitions of shallow donors in strongly compensated n-type Ge in the presence of electric fields and their gradients arising from randomly distributed ionized impurities. Low-temperature (T = 3.2 K) far-infrared absorption spectra of strongly compensated n-type Ge:(As,Ga) have been obtained for samples having ionized impurity concentration NI = 2.2 × 1013-2.6 × 1014 cm-3. Absorption peaks corresponding to 1s-2p± transition of arsenic impurities are observed, and broadened linearly with the ionized impurity concentration due to interactions between electrons and the quadrupole moments of ionized donors. The slope of the peak line width plotted against NI changes at NI ≈ 8 × 1013 cm-3 due to the transition of ionized impurity distribution from random (NI < 8 × 1013 cm-3) to correlated (NI 8 × 1013 cm-3).

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