Electric field broadening of arsenic donor states in strongly compensated n-type Ge:(As, Ga)

Jiro Kato, Kohei M. Itoh, Eugene E. Haller

Research output: Contribution to journalConference article

Abstract

We discuss on the broadening of ground-state to bound excited-state transitions of shallow donors in strongly compensated n-type Ge in the presence of electric fields and their gradients arising from randomly distributed ionized impurities. Low-temperature (T = 3.2 K) far-infrared absorption spectra of strongly compensated n-type Ge:(As,Ga) have been obtained for samples having ionized impurity concentration NI = 2.2 × 1013-2.6 × 1014 cm-3. Absorption peaks corresponding to 1s-2p± transition of arsenic impurities are observed, and broadened linearly with the ionized impurity concentration due to interactions between electrons and the quadrupole moments of ionized donors. The slope of the peak line width plotted against NI changes at NI ≈ 8 × 1013 cm-3 due to the transition of ionized impurity distribution from random (NI < 8 × 1013 cm-3) to correlated (NI 8 × 1013 cm-3).

Original languageEnglish
Pages (from-to)1-6
Number of pages6
JournalPhysica B: Condensed Matter
Volume302-303
DOIs
Publication statusPublished - 2001 Jun 30
EventYanada Conference LIV. 9th International Conference on Shallow-Level Centers in Semiconductors - Awaji Island, Hyogo, Japan
Duration: 2000 Sep 242000 Sep 27

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Keywords

  • Compensated semiconductors
  • Impurity absorption
  • Impurity distribution

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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