Electric field broadening of gallium acceptor states in compensated Ge

Ga,As

Kohei M Itoh, W. Walukiewicz, J. W. Beeman, E. E. Haller, Hyunjung Kim, A. J. Mayur, M. D. Sciacca, A. K. Ramdas, R. Buczko, J. W. Farmer, V. I. Ozhogin

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

We report on low-temperature infrared absorption spectroscopy studies of p-type Ge:Ga,As samples with varying doping compensation ratios. Previous difficulties in fabricating appropriate samples are overcome by applying the neutron transmutation doping technique to high purity germanium of isotopically controlled composition with 70Ge and 74Ge. With this technique, we have produced a series of crystals with compensation ratios between 0.082 and 0.87 while maintaining the net-acceptor concentration [Ga]-[As] constant at 5×1014cm-3. The observed Ga impurity absorption peaks broaden linearly with the ionized impurity concentration due to the quadrupole interactions between Ga bound holes and the electric field gradient. Experimental linewidths are quantitatively compared to existing theories of electric field broadening for donor 1s-2p transitions. We find excellent agreement with the theory which is based on the correlated distribution of ionized impurity centers.

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publ
Pages127-132
Number of pages6
Volume196-201
Editionpt 1
Publication statusPublished - 1995
EventProceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn
Duration: 1995 Jul 231995 Jul 28

Other

OtherProceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4)
CitySendai, Jpn
Period95/7/2395/7/28

Fingerprint

Gallium
Electric fields
Impurities
Doping (additives)
Germanium
Infrared absorption
Absorption spectroscopy
Linewidth
Infrared spectroscopy
Neutrons
Crystals
Chemical analysis
Temperature
Compensation and Redress

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Itoh, K. M., Walukiewicz, W., Beeman, J. W., Haller, E. E., Kim, H., Mayur, A. J., ... Ozhogin, V. I. (1995). Electric field broadening of gallium acceptor states in compensated Ge: Ga,As. In Materials Science Forum (pt 1 ed., Vol. 196-201, pp. 127-132). Trans Tech Publ.

Electric field broadening of gallium acceptor states in compensated Ge : Ga,As. / Itoh, Kohei M; Walukiewicz, W.; Beeman, J. W.; Haller, E. E.; Kim, Hyunjung; Mayur, A. J.; Sciacca, M. D.; Ramdas, A. K.; Buczko, R.; Farmer, J. W.; Ozhogin, V. I.

Materials Science Forum. Vol. 196-201 pt 1. ed. Trans Tech Publ, 1995. p. 127-132.

Research output: Chapter in Book/Report/Conference proceedingChapter

Itoh, KM, Walukiewicz, W, Beeman, JW, Haller, EE, Kim, H, Mayur, AJ, Sciacca, MD, Ramdas, AK, Buczko, R, Farmer, JW & Ozhogin, VI 1995, Electric field broadening of gallium acceptor states in compensated Ge: Ga,As. in Materials Science Forum. pt 1 edn, vol. 196-201, Trans Tech Publ, pp. 127-132, Proceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4), Sendai, Jpn, 95/7/23.
Itoh KM, Walukiewicz W, Beeman JW, Haller EE, Kim H, Mayur AJ et al. Electric field broadening of gallium acceptor states in compensated Ge: Ga,As. In Materials Science Forum. pt 1 ed. Vol. 196-201. Trans Tech Publ. 1995. p. 127-132
Itoh, Kohei M ; Walukiewicz, W. ; Beeman, J. W. ; Haller, E. E. ; Kim, Hyunjung ; Mayur, A. J. ; Sciacca, M. D. ; Ramdas, A. K. ; Buczko, R. ; Farmer, J. W. ; Ozhogin, V. I. / Electric field broadening of gallium acceptor states in compensated Ge : Ga,As. Materials Science Forum. Vol. 196-201 pt 1. ed. Trans Tech Publ, 1995. pp. 127-132
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AU - Itoh, Kohei M

AU - Walukiewicz, W.

AU - Beeman, J. W.

AU - Haller, E. E.

AU - Kim, Hyunjung

AU - Mayur, A. J.

AU - Sciacca, M. D.

AU - Ramdas, A. K.

AU - Buczko, R.

AU - Farmer, J. W.

AU - Ozhogin, V. I.

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AB - We report on low-temperature infrared absorption spectroscopy studies of p-type Ge:Ga,As samples with varying doping compensation ratios. Previous difficulties in fabricating appropriate samples are overcome by applying the neutron transmutation doping technique to high purity germanium of isotopically controlled composition with 70Ge and 74Ge. With this technique, we have produced a series of crystals with compensation ratios between 0.082 and 0.87 while maintaining the net-acceptor concentration [Ga]-[As] constant at 5×1014cm-3. The observed Ga impurity absorption peaks broaden linearly with the ionized impurity concentration due to the quadrupole interactions between Ga bound holes and the electric field gradient. Experimental linewidths are quantitatively compared to existing theories of electric field broadening for donor 1s-2p transitions. We find excellent agreement with the theory which is based on the correlated distribution of ionized impurity centers.

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