Electric-Field-Induced ultralow power switching in superlattice phase change materials

T. Shintani, S. Soeya, T. Saiki

    Research output: Contribution to journalConference article

    2 Citations (Scopus)

    Abstract

    The superlattice (SL) phase change materials, consisting of GeTe/Sb2Te3(GeTeSL) or SnTe/Sb2Te3 (SnTeSL), were demonstrated to achieve extremely low power RESET operation. The eight-layered SnTeSL consisting of Sn10Te90 showed 10-3 lower RESET power than Ge2Sb2Te5 (GST225) with the same film thickness. The electric and optical experimental results indicate that the mechanism of the low power switching is the RESET operation induced not by thermal energy but by the electric field, which can reduce the dynamic current. This hypothesis was supported by the first principle molecular dynamics. The singlelayered SnTeSL showed 10-4 RESET power, which is explained by the electric-field-induced switching.

    Original languageEnglish
    Pages (from-to)71-76
    Number of pages6
    JournalECS Transactions
    Volume64
    Issue number14
    DOIs
    Publication statusPublished - 2014 Jan 1
    EventSymposium on Nonvolatile Memories 3 - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico
    Duration: 2014 Oct 52014 Oct 9

    ASJC Scopus subject areas

    • Engineering(all)

    Fingerprint Dive into the research topics of 'Electric-Field-Induced ultralow power switching in superlattice phase change materials'. Together they form a unique fingerprint.

  • Cite this